A method of detecting of short scalar gravitational waves with a wavelength of λ ~ 0.5 μm is proposed, in contrast to LIGO Project, aimed at detecting of long quadrupole gravitational waves (λ ~ 43 ÷ 10000 km). The conduction electrons in a metal are proposed to use as gravitational receiving antennas instead of massive pendulums. It is shown that using a Large Scale metal diffraction grating you can convert the mechanical vibrations of the conduction electrons of metal into a plane electromagnetic wave propagating along the normal to the grating. It is shown that when the amplitude of the scalar gravitational wave in a source (in quasar at the center of our galaxy) is greater than Ago ≈ 5 1020cm/s2, you can register it with the help of a large optical telescope equipped with the proposed diffraction grating. It is shown that the special theory of relativity allows the amplitude of the scalar gravitational waves in this source by 5 orders of magnitude greater than the above-mentioned minimum value.
A model of "parallel" metal-graphene quantum FET nanotransistor with a gate on the Coulomb blockade in the "magic" Ir55 nanocrystals is proposed and designed. This nanotransistor will have a speed of about 2.5 * 1011 Hz and size of 32x32x12 nm3. It is shown that in this model of nanotransistor a source-drain potential is equal to 1.2 V, the threshold for the opening of the gate UG is equal to 0.4 V and the total current in parallel connected 250 elementary single-electron nanotransistors - crystals of Ir55 is 1.5 * 10-5 A. This current is approximately equal to the current in experimental terahertz semiconductor nanotransistors. It is shown that gain coefficient for charge is Kq = 1, and the power gain is equal to KP ~ 3. Such nanotransistor at using inductive-capacitive load could be an element of the integrated circuit - the generator of electro-magnetic waves with a wavelength of 1.2 mm and power density ~ 104 W/cm2.
It is offered the using of new, simpler and more stable electron - optical element - the combined electromagnetic mirror as the corrector of the axial chromatic aberration in ion optical systems. Such element, together with the system of separation of beams, forms the corrector. The use of such corrector allows powerfully lowering the coefficient of chromatic aberration of ion objectives. The maximum of the relative magnitude of the coefficient lowering is equal to the inverse coefficient of stability of electrodes voltage in ion microscopes and currents stability in the magnetic lenses of electron microscopes (i.e. in 105 times). In FIB-systems it will allow to create sondes of sub-nanometer size and also it will allow to solve the problem of creation of single ions implanter for technology of a solid-state quantum computer. It's shown that resolution (or FWHM) of 2 nanometer may be achieved by reactive ion etching with the using of focused ion beam on the base of combined electromagnetic mirror as compensator of chromatic aberration of ion objective lenses. It will allow to create the templates for imprint and masks for proximity lithography with the size of half pith of 2 nm.
It is offered, designed and digitally simulated new electron - optical element - combined axially symmetric
electromagnetic mirror. It is shown, that coefficients of chromatic and spherical aberrations of this mirror have the sign
opposite to a usual sign of axial aberrations in axially symmetric optics of charged particles. Their absolute sizes are
equal to the double size of a projection of a paraxial optical way of the charged particle in electromagnetic field of a
mirror to an axis of symmetry of a mirror. It allows to change the negative coefficients of axial aberrations in a wide
range from several millimeters up to meter, without changing of a mirror focus and energy of the charged particles. It
allows in turn to compensate the positive coefficients values of axial aberrations of the modern optimized ion and
electron objectives.
We propose in this paper the method and the electron - optical scheme of full correction of the chromatic and spherical
aberrations coefficients in the axially symmetric ion and electron objectives, based on these properties of the mirror.
The proposed electron - optical scheme of the corrector has approximately in 5 times less adjusting (mechanical plus
electric) degrees of freedom and, hence, it is much more stable than the unique scheme of the corrector working in
electron optics. It is shown that the combined electromagnetic mirror, on the contrary of the existing scheme, can be
applied not only in electron but also in ion optics.
The numerical analysis of the vacuum nanotriode model with three nanopillar field emifters is carried out. This analysis shows that fluctuation in transconductance of nanotriode can be explained with the assumption that three nanopillar field emitters are three sources of mutually coherent electron waves. The interference picture in the grid plane (in the gate aperture) varies depending on potential of a grid. Thereof the anode current of nanotriode oscillates. The transconductance dependence calculated on this model coincides with an experimental curve. It is shown that nanotriode with the opened aperture in the anode and with the second continuous anode-drain electrode at distances from 100 nanometers up to 1 mm from the first anode with an aperture will enable to demonstrate precise interference fluctuations in the current-voltage characteristic with amplitude on 2 orders more than in existing experiments. Such scheme of nanotriode will enable to receive the change of a sign on function in transconductance of nanotriode. In this case current-voltage characteristic of nanotriode will be N-shaped as in tunnel diode. This experiment will prove also that in the vacuum nanotriode the length of coherence of electrons in a tungsten wire of 2 nanometers in diameter at room temperature exceeds the sum of lengths of two lateral field emitters plus the distance between their bases (~5Onm).
The scanning (step-and-repeat) and projective (simultaneous) methods of ion-optical implantations of single phosphorus 31P ions in hetero-structure Si/SixGe1-x are offered and analyzed with the purpose of formation of qubits of the solid-state quantum computer. Opportunities axial-symmetric electromagnetic objective lenses and existing sources of highly charged ions with reference to the given problem are considered. It is shown, that combined axial-symmetric electromagnetic lenses have advantage in comparison with electrostatic lenses. The combined electromagnetic objective having record small axial aberrations is designed. The optical scheme of scanning single ion implanter with such objective is offered. The critical parameters determining productivity of ion-optical implanter are allocated. They are the allowable lateral discrepancy of localization of implanted ions, a chromatic aberration of an objective, brightness of an ion source and the multiplicity of a charge of doped ions. The formula connecting these values is deduced. Requirements to sources of highly charged ions and the offer on search of new sources of highly charged ions and projective ion-optical schemes of single ion implantation are formulated.
This paper is the further development of work of authors [V.A. Zhukov et. al., Proceedings of SPIE, 5128, (2003)] devoted to theoretical research of the limiting resolution or Critical Development (CD) in ion lithography at use as objectives the combined axial symmetrical immersion lenses. In the given paper the refinement of the basic critical ion-optical parameters of objective combined immersion lenses is carried out. These parameters are the coefficient of a chromatic aberration of first order Cc and the maximal density of a current in the superconducting coil of excitation of combined lens I/S depending on parameter of retardation (immersion) τ=Wt/Wo. Where Wt is energy of ions on a target, W is the energy of ions before a lens, I is a current, and S is area of cross section of the coil. It is shown, that in combined axial symmetrical lenses it is possible to compensate in principle as much as full a chromatic abberation of the first order Cc and a spherical abberation of the third order Cs, since at parametere of retardation τ → 0 also Cc, Cs →0. However, full compensation can take place only at τ=0, i.e. at a full stopping of particles.
With the help of a method of Monte Carlo the distributions of implanted Ga atoms on depth and on radial coordinate of a crystal target from silicon are calculated at falling for target surface of indefinitely thin beam of Ga+ ions by energy Wt in 1 keV. From these calculations it follows, that using ion implantation from the focused ion beams, it is possible to receive 2 x 1012 pixels with the size 3.6 x 3.6 nm2 everyone, in the frame in the size 3 x 3 mm2 on an ion-lithographic target.
There is investigated theoretical possibility to make quantum computer elements by means of Ion Lithography with resolution of details about 2 nm. The axisymmetrical combined immersion lenses of three types are investigated for this aim in a whole range of working regimes from the edge of pure electrostatic regime to the edge of combined mirror regime. Simple analytical approximations are derived for four main ion-optical parameters of combined lenses: focal length f, coefficient of chromatic aberration Cd, coefficient of spherical aberration of the third order Cs, and Amper-turns in the magnetic coil of combined lens NI. These parameters are expressed in form of functions of dimensionless quantity (formula available in paper) is the energy of ions at the lithographic target and W0 is the initial energy of ions. It is shown that axial aberrations of combined lenses (Cc and Cs) and focal length f have a maximum under absence of magnetic field (when lenses are pure electrostatic). It is shown that under ττ yeilds 0 parameters Cc, Cs, f and NI, as functions of quantity τ, take forms: Cc~τ1/6, Cs~τ1/4, f~τ1/3, NI~τ(-1/2). It is shown also that the Ion Lithographic image (by using heavy ions in non-resist regime) could have 2*1012 pixels under resoltuion 2nm in the frame 3×3mm2.
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