Mr. Valeriano Ferreras Paz Profile

Valeriano Ferreras Paz

at Univ Stuttgart

SPIE Involvement:

Author

Publications (4)

SPIE Journal Paper | 10 April 2015

Phase-sensitive structured illumination to detect nanosized asymmetries in silicon trenches

Ahmad Faridian, Valeriano Ferreras Paz, Karsten Frenner, Giancarlo Pedrini, Arie den Boef, Wolfgang Osten

JM3, Vol. 14, Issue 02, 021104, (April 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.2.021104

KEYWORDS: Semiconducting wafers, Silicon, Microscopy, Wavefronts, Illumination engineering, Image enhancement, Metrology, Semiconductors, Image resolution, Scatterometry

Read Abstract +

Proceedings Article | 13 May 2013 Paper

Simulation based optimization of scatterometric signatures by designed near field structures

V. Ferreras Paz, K. Frenner, W. Osten

Proceedings Volume 8789, 87890S (2013) https://doi.org/10.1117/12.2020569

KEYWORDS: Near field, Silver, Silicon, Reflectivity, Scatterometry, Scatter measurement, Metrology, Electromagnetism, Diffraction, Nanorods

Read Abstract +

Scatterometry is a well-established optical metrology method used in research as well as in industrial applications to precisely characterize small structures. The method is based on a comparison of the measured scattered light field to the rigorously simulated scattered light field based on a model of the real structure. Although in recent time this method has been steadily improved and extended to characterize structures down to sub-lambda size, the sensitivity towards the parameters of interest is generally decreasing for smaller structures, which makes the characterization more and more difficult. Opposed to other efforts based on changing the measurement configuration or combining different measurement methods, we have chosen to address the fundamental cause of this loose of information: As known from theory the electromagnetic near field is directly dominated by currents and charge-separations in the illuminated structure, while the far field is produced by its corresponding near field and is not directly linked to the charges and currents induced in the structure. For that reason the transition from the near field to the far field, which is accessible in a scatterometric measurement, causes information loss about the structure. In our approach we directly influence the near field with the introduction of additional structures in the direct vicinity of the sub-lambda grating to be characterized. With rigorous electromagnetic simulations we optimize the design of these near field structures to increase the information content of the scatterometric signatures which can be detected in the far field region. We show the optimization of scatterometric signatures for a silicon line grating and compare the gain of information obtained by the near field design. Understanding the influence of the near field on the scatterometric signatures can help to address the increasing demand on quality management caused by the constant miniaturization in industrial applications.

Proceedings Article | 23 May 2011 Paper

Depth sensitive Fourier-Scatterometry for the characterization of sub-100 nm periodic structures

V. Ferreras Paz, S. Peterhänsel, Ka. Frenner, W. Osten, A. Ovsianikov, K. Obata, B. Chichkov

Proceedings Volume 8083, 80830M (2011) https://doi.org/10.1117/12.889439

KEYWORDS: Critical dimension metrology, Silicon, Mirrors, Diffraction, Metrology, Two photon polymerization, Photoresist materials, Microscopes, Scatterometry, Photosensitive materials

Read Abstract +

Proceedings Article | 18 March 2009 Paper

Fabrication of metrology test structures for future technology nodes using high-resolution variable-shaped e-beam direct write

László Szikszai, Philipp Jaschinsky, Katja Keil, Marc Hauptmann, Manfred Mört, Uwe Seifert, Christoph Hohle, Kang-Hoon Choi, Frank Thrum, Johannes Kretz, Vaeriano Ferreras Paz, Arie den Boef

Proceedings Volume 7271, 72712M (2009) https://doi.org/10.1117/12.814181

KEYWORDS: Scatterometry, Metrology, Line edge roughness, Critical dimension metrology, Line width roughness, Semiconducting wafers, Electron beams, Electron beam direct write lithography, Lithography, Cadmium

Read Abstract +

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years