High-sensitivity EUV reticle inspections in mask shop and IC fab are required to enable successful EUV adoption in production for the considerations of yield increase, cost and cycle time reduction. Since 1st optical (193nm) tool for EUV reticles inspection was released in 2017, KLA has been committed to having continuous performance improvement both in hardware and die-to-database algorithms for EUV High Volume Manufacturing (HVM) reticle qualification. In this paper, we will provide an overview of the latest KLA activities toward enabling EUV-reticle manufacturing through 193-nm reticle-inspection tool advancements to meet requirements for mask shop qualification and for IC fab mask re-qualification. This is accomplished via combined inspection steps of direct reticle inspection and wafer print check. We will also review challenges for future nodes and show the latest progress to address them utilizing next-generation reticle inspection systems.
As extreme ultra-violet (EUV) lithography moves into high volume manufacturing (HVM) for several critical layers for the N5 node, there is a need to develop a comprehensive strategy for mask re-qualification in the fab to mitigate contamination risks. The introduction of additional particle sources due to the scanner vacuum system and potential growth of film or particle deposition on the reticle, in combination with pellicle uncertainty, pose unique inspection challenges for EUV reticle defectivity compared to 193i reticles. EUV reticles are typically inspected with optical reticle inspection tools at outgoing quality control during their manufacture. Optical reticle inpsection tools are also traditionally used in the IC fab for incoming reticle qualification and periodic reticle re-qualification during production. However, to reduce material at risk in the IC fab there is a need for alternate inspection methodologies based on inspection of printed wafers. In addition, potential new defect mechanisms, such as those associated with the multi-layer mask of the EUV reticle, are driving fabs to re-qualify reticles in production using new methods that involve printed wafer inspection. The printed wafer inspection methodology is referred to as “reticle print check” or simply “print check”. In this paper we will describe the print check flow and show results from new developments in this methodology improving the capture of mask defects on wafer.
Stochastics defect detection has been a topic of intense study by the extreme ultraviolet (EUV) patterning fraternity [1]. A large part of this initial feasibility work has been performed using electron microscope-based systems [1,2]. A limited sample area is imaged using electron microscopes and images are analyzed using offline analysis techniques [1,2]. However, to accurately quantify the stochastics failure rate, the entire area of interest needs to be inspected. Given such large area inspection requirements, automated and high throughput solutions are the need of the hour to enable stochastics quantification in HVM (high volume manufacturing). This paper demonstrates Broadband Plasma optical wafer inspection capability to capture two key defects on EUV layers a) missing contact in contact hole array patterns b) line breaks in line- space pattern.
As Extreme UltraViolet (EUV) lithography nears high volume manufacturing (HVM) adoption to enable the sub-7nm scaling roadmap, characterizing and monitoring defects that print at wafer level are of critical importance to yield. This is especially true for defects coming from the EUV mask, such as multi-layer defects, added particles or growth on mask, and for defects coming from the pattern formation process itself, also referred to as stochastic printing defects. A “Print Check” solution has been previously described.1 This technique uses full-wafer patterned optical inspection to monitor mask defects that print on the wafer. In this paper we focus on developing metrology solutions for stochastic printing defects, which are random local variations that occur between structures that should, in principle, print identically, but actually occur at significant frequencies with current state-of-the-art processes. Specifically, we discuss the importance of monitoring these defects using broadband plasma optical inspection and e-beam defect review systems. We show extensive characterizations of defects on line space patterns down to a pitch of 36nm, on contact holes at a pitch of 48nm and on logic blocks in a foundry equivalent N5 test vehicle. Analysis methods based on CD SEM and review SEM images have been described.
As the Extreme Ultraviolet (EUV) lithography ecosystem is being actively mapped out to enable sub-7nm
design rule devices, there is an immediate and imperative need to identify the EUV reticle (mask) inspection
methodologies [1]. The introduction of additional particle sources due to the vacuum system and potential growth of
haze defects or other film or particle depositions on the reticle, in combination with pellicle uncertainty pose unique
inspection challenges when compared to 193i reticles.
EUV reticles are typically inspected with optical reticle-inspection tools. However, if there is a pellicle on the
EUV mask which is non-transmissive to the optical wavelengths used in the reticle inspection tools, then there is a need
for alternative inspection methodologies based on inspection of printed wafers. In addition, due to the potential new
defect mechanisms associated with the EUV reticles, fabs are looking for additional methods to re-qualify reticles in
production using printed wafer inspections. The printed wafer inspection methodology is referred to as “Reticle Print
Verification” or “Reticle Print Check.” This paper discusses these alternative inspection methodologies that are being
developed in collaboration with imec using an advanced broadband plasma (BBP) patterned wafer optical inspection
(KLA-Tencor 3905) and e-beam review systems (KLA-Tencor eDR7280).
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