This work presents measured results demonstrating an uncooled infrared (IR) detector based on gallium nitride (GaN)
micromechanical resonators. GaN-based photonic detectors are typically designed to operate in the ultraviolet (UV)
regime as the absorption spectrum of wide-band gap GaN peaks at a wavelength of ~360 nm. In contrast, the
transduction mechanism of the device presented in this work is the pyroelectric perturbation of a GaN micromechanical
resonator, allowing the detection of radiation in the IR regime. IR radiation within the absorption spectrum of the
resonating stack material (mainly the IR absorber) is converted into heat causing pyroelectric charge release, which in
turn shifts the resonant frequency via changes in the acoustic velocity of GaN. A thin-film IR absorber based on carbon-nanotube
nanocomposite is proposed, which offers IR absorptivity of more than 95%. As a proof of concept, we
demonstrate a GaN resonant detector operated at 119 MHz, which exhibits an IR sensitivity of ~4 Hz/10nW.
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