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Vincent Meyers
at SUNY Polytechnic Institute
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Publications (3)
Proceedings Article | 5 March 2022 Presentation
Toward highly efficient p-doping in III-nitride optoelectronics: MOCVD growth of Be-doped GaN
Proceedings Volume PC12001, PC120010B (2022) https://doi.org/10.1117/12.2626491
KEYWORDS: Gallium nitride, Metalorganic chemical vapor deposition, Beryllium, Optoelectronics, Magnesium, Luminescence, Doping, Ultraviolet radiation, Toxicity, Optoelectronic devices
Proceedings Article | 5 March 2021 Presentation
Cs-free N-polar III-nitride photocathode detectors with high quantum efficiency: role of impurity incorporation at interfaces and planes
Proceedings Volume 11686, 116861B (2021) https://doi.org/10.1117/12.2578627
KEYWORDS: Signal detection, Gallium nitride, Ultraviolet radiation, Cesium, Silicon, Scattering, Reliability, Quantum efficiency, Interfaces, Sensors
Proceedings Article | 13 March 2019 Presentation
Enhanced p-type conductivity in N-polar GaN photocathode structures and correlation with GaN hillock density (Conference Presentation)
Emma Rocco, Isra Mahaboob, Kasey Hogan, Sean Tozier, Vincent Meyers, Ben McEwen, Steven Novak, Baishakhi Mazumder, L. D. Bell, F. Shadi Shahedipour-Sandvik
Proceedings Volume 10918, 109180Y (2019) https://doi.org/10.1117/12.2510035
KEYWORDS: Gallium nitride, Magnesium, Nitrogen, Gallium, Sensors, Quantum efficiency, Polarization, Field effect transistors, Light emitting diodes, Doping
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