Prof. Vladimir M. Borzdov Profile

Prof. Vladimir M. Borzdov

at Belarusian State Univ

SPIE Involvement:

Author

Publications (13)

Proceedings Article | 31 January 2022 Paper

Monte Carlo simulation of picosecond laser irradiation photoresponse of deep submicron SOI MOSFET

Andrei Borzdov, Vladimir Borzdov, Vladimir Vyurkov

Proceedings Volume 12157, 121570Y (2022) https://doi.org/10.1117/12.2624174

KEYWORDS: Monte Carlo methods, Field effect transistors, Transistors, Semiconductors, Laser irradiation, Silicon

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Proceedings Article | 15 March 2019 Paper

Efficiency of terahertz harmonic generation in GaAs quantum wire structure: a Monte Carlo simulation

Andrei Borzdov, Vladimir Borzdov, Vladimir Labunov, Vladimir V’yurkov

Proceedings Volume 11022, 110220L (2019) https://doi.org/10.1117/12.2521423

KEYWORDS: Monte Carlo methods, Harmonic generation, Electron transport, Gallium arsenide, Terahertz radiation, Scattering, Semiconductors, Transistors, Quantization

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Proceedings Article | 30 December 2016 Paper

Low-dimensional transit-time diodes for terahertz generation

R. Khabutdinov, I. Semenikhin, F. Davydov, D. Svintsov, V. Vyurkov, L. Fedichkin, K. Rudenko, A. Borzdov, V. Borzdov

Proceedings Volume 10224, 102240M (2016) https://doi.org/10.1117/12.2267243

KEYWORDS: Diodes, Millimeter wave sensors, Nanowires, Scattering, Silicon, Terahertz radiation, Antennas, Laser scattering, Capacitance, Semiconducting wafers

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Proceedings Article | 30 December 2016 Paper

Ensemble Monte Carlo simulation of electron transport in GaAs/AlAs quantum wire structure under the effect of terahertz electric field

Andrei Borzdov, Vladimir Borzdov, Vladimir V'yurkov

Proceedings Volume 10224, 102240W (2016) https://doi.org/10.1117/12.2266775

KEYWORDS: Monte Carlo methods, Electron transport, Gallium arsenide, Scattering, Phonons, Surface roughness, Transistors, Terahertz radiation, Semiconductors, Acoustics

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Proceedings Article | 18 December 2014 Paper

Monte Carlo simulation of hot electron transport in deep submicron SOI MOSFET

A. Borzdov, V. Borzdov, V. V'yurkov

Proceedings Volume 9440, 944013 (2014) https://doi.org/10.1117/12.2180417

KEYWORDS: Monte Carlo methods, Field effect transistors, Ionization, Scattering, Transistors, Electron transport, Silicon, Particles, Interfaces, Phonons

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Proceedings Article | 29 April 2008 Paper

Monte Carlo study of influence of channel length and depth on electron transport in SOI MOSFETs

Oleg Zhevnyak, Vladimir Borzdov, Andrey Borzdov, Dmitry Pozdnyakov, Fadei Komarov

Proceedings Volume 7025, 70251L (2008) https://doi.org/10.1117/12.802533

KEYWORDS: Field effect transistors, Monte Carlo methods, Electron transport, Scattering, Oxides, Silica, Silicon, Interfaces, Quantization, Surface roughness

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Proceedings Article | 29 April 2008 Paper

Modeling of non-stationary electron transport in semiconductor nanowires and carbon nanotubes

Dmitry Pozdnyakov, Andrei Borzdov, Vladimir Borzdov, Fadei Komarov

Proceedings Volume 7025, 70251S (2008) https://doi.org/10.1117/12.802540

KEYWORDS: Carbon nanotubes, Electron transport, Scattering, Semiconductors, Monte Carlo methods, Software development, Picosecond phenomena, Lanthanum, Solids, Nanowires

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Proceedings Article | 8 September 2006 Paper

Peculiar properties of electron transport in single-wall armchair carbon nanotubes

Dmitry Pozdnyakov, Vadim Galenchik, Vladimir Borzdov, Fadei Komarov

Proceedings Volume 6328, 63280Y (2006) https://doi.org/10.1117/12.680528

KEYWORDS: Phonons, Scattering, Carbon nanotubes, Graphene, Chemical species, Electron transport, Carbon, Field effect transistors, Polarization, Acoustics

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Proceedings Article | 10 June 2006 Paper

Calculation of secondary charge carrier current in submicron channel MOSFETs at stress regimes of operation

Vladimir Borzdov, Fadei Komarov, Oleg Zhevnyak, Vadim Galenchik, Dmitry Pozdnyakov, Andrei Borzdov

Proceedings Volume 6260, 62601E (2006) https://doi.org/10.1117/12.683488

KEYWORDS: Ionization, Field effect transistors, Monte Carlo methods, Quantization, Scattering, Electron transport, Transistors, Silicon, Neodymium, Nanoelectronics

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Proceedings Article | 10 June 2006 Paper

Monte Carlo simulation of device structures with one-dimensional electron gas

Vladimir Borzdov, Fadei Komarov, Vadim Galenchik, Dmitry Pozdnyakov, Andrey Borzdov, Oleg Zhevnyak

Proceedings Volume 6260, 62601N (2006) https://doi.org/10.1117/12.683545

KEYWORDS: Scattering, Gallium arsenide, Phonons, Monte Carlo methods, Carbon nanotubes, Transistors, Electron transport, Acoustics, Device simulation, Semiconductors

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Proceedings Article | 2 August 2004 Paper

Space-averaged electron drift velocity in GaAs-quantum wires

Vladimir Borzdov, Oleg Zhevnyak, Vadim Galenchik, Dmitry Pozdnyakov, Fadei Komarov

Proceedings Volume 5509, (2004) https://doi.org/10.1117/12.560099

KEYWORDS: Scattering, Gallium arsenide, Surface roughness, Phonons, Monte Carlo methods, Acoustics, Solids, Electron transport, Particles, Electromagnetic scattering theory

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Proceedings Article | 28 May 2004 Paper

Ensemble Monte Carlo simulation of submicron n-channel MOSFETs with account of hot electron effects

Vladimir Borzdov, Vadim Galenchik, Oleg Zhevnyak, Fadei Komarov, A. Zyazulya

Proceedings Volume 5401, (2004) https://doi.org/10.1117/12.562736

KEYWORDS: Monte Carlo methods, Field effect transistors, Algorithm development, Ionization, Scattering, Electron transport, Computer simulations, Instrument modeling, Software development, Doping

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Proceedings Article | 27 October 2003 Paper

Electron-drift-velocity oscillations in GaAs-quantum wires with finite length

Vladimir Borzdov, Oleg Zhevnyak, Vadim Galenchik, Fadei Komarov, Dmitry Pozdnyakov

Proceedings Volume 5219, (2003) https://doi.org/10.1117/12.508290

KEYWORDS: Scattering, Phonons, Surface roughness, Monte Carlo methods, Signal attenuation, Gallium arsenide, Absorption, Electronics, Switching, Electron transport

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Showing 5 of 13 publications

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