The possibilities of using plasma formed by laser radiation in Ge- and Si semiconductors to create plasma antennas are analyzed. The dependences of the amplitude of the emitted microwave signal in the range of 6-7.5 GHz on the laser power and the length of the irradiated section on the semiconductor plate, which served as a transmitting vibrating antenna, were obtained. It is shown that the amplitude of the transmitted signal during the formation of a plasma antenna in Si and Ge crystals can be increased by more than an order of magnitude. The proposed method for creating a semiconductor plasma antenna with initiation by laser radiation has great prospects for creating materials with controlled electromagnetic characteristics in the radio, microwave and THz spectral ranges.
Multiwavelength lasing in the random distributed feedback fiber laser is demonstrated by employing an all fiber Lyot filter. Stable multiwavelength generation is obtained, with each line exhibiting sub-nanometer line-widths. A flat power distribution over multiple lines is also obtained, which indicates the contribution of nonlinear wave mixing towards power redistribution and equalization in the system. The multiwavelength generation is observed simultaneously in first and second Stokes waves.