Prof. Volodymyr V. Tetyorkin Profile

Prof. Volodymyr V. Tetyorkin

at Institute of Semiconductor Physics

SPIE Involvement:

Author

Proceedings Article | 28 February 2006 Paper

Charge carrier transport in barrier “in-macroporous silicon” structures

Lyudmyla Karachevtseva, Volodimir Onishchenko, Fiodor Sizov, Andriy Sukach, Volodimir Teterkin

Proceedings Volume 6127, 61270O (2006) https://doi.org/10.1117/12.644143

KEYWORDS: Silicon, Resistance, Manufacturing, Metals, Temperature metrology, Crystals, Hydrogen, Indium, Resistors, Semiconductors

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Proceedings Article | 30 September 2005 Paper

Cooled InAs photodiodes for IR applications

A. Sukach, V. Tetyorkin, G. Olijnuk, V. Lukyanenko, A. Voroschenko

Proceedings Volume 5957, 59571A (2005) https://doi.org/10.1117/12.622195

KEYWORDS: Photodiodes, Indium arsenide, Diffusion, Chemical species, Temperature metrology, Quantum efficiency, Cadmium, Capacitance, Resistance, Mid-IR

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Proceedings Article | 29 September 2005 Paper

p+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors

V. Tetyorkin, A. Sukach, S. Stariy, N. Zotova, S. Karandashev, B. Matveev, N. Stus

Proceedings Volume 5957, 59570Z (2005) https://doi.org/10.1117/12.622181

KEYWORDS: Photodiodes, Heterojunctions, Indium arsenide, Sensors, Diffusion, Infrared sensors, Liquid phase epitaxy, Optoelectronics, Infrared radiation, Temperature metrology

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Proceedings Article | 22 October 2004 Paper

Uncooled InAs photodiodes for optoelectronic sensors

Grygoriy Oliynuk, Andriy Sukach, Vladimir Tetyorkin, Sergiy Stariy, Volodymyr Lukyanenko, Andriy Voroschenko

Proceedings Volume 5564, (2004) https://doi.org/10.1117/12.561401

KEYWORDS: Photodiodes, Diffusion, Indium arsenide, Sensors, Optoelectronics, Temperature metrology, Chemical species, Light emitting diodes, Cadmium, Absorption

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Proceedings Article | 20 January 2004 Paper

Nature of nonlinearity of I-V characteristics in CdTe:Cl single crystals

Andriy Sukach, Volodymyr Tetyorkin, Volodymyr Popovych, Volodymyr Popov

Proceedings Volume 5198, (2004) https://doi.org/10.1117/12.507424

KEYWORDS: Crystals, Chemical species, Semiconductors, Temperature metrology, Chlorine, X-ray detectors, Sensors, Manufacturing, Resistance, Doping

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Proceedings Article | 20 January 2004 Paper

Schottky barriers at Au/p-CdTe interfaces

Yevgen Bilevych, Andriy Sukach, Volodymyr Tetyorkin, A. Boka

Proceedings Volume 5198, (2004) https://doi.org/10.1117/12.507331

KEYWORDS: Interfaces, Metals, Gold, Cadmium, Tellurium, Wet etching, Annealing, Semiconductors, Crystals, Chemical reactions

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Proceedings Article | 8 August 2003 Paper

Influence of free carrier heating on IR light detection in narrow-gap semiconductors

Steponas Asmontas, J. Gradauskas, D. Seliuta, A. Suziedelis, E. Sirmulis, V. Tetyorkin, A. Urbelis, G. Valusis

Proceedings Volume 5123, (2003) https://doi.org/10.1117/12.517029

KEYWORDS: Semiconductors, Absorption, Carbon dioxide lasers, Mercury cadmium telluride, Photodiodes, Pulsed laser operation, Infrared detectors, Diodes, Photovoltaics, Infrared radiation

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Proceedings Article | 12 November 2001 Paper

Dark current transport mechanisms in narrow-gap heterojunctions for IR arrays

Fiodor Sizov, Joanna Gumenjuk-Sichevskaya, Yuri Sidorov, Vladimir Vasilev, Alexandr Golenkov, Vyacheslav Zabudsky, Vladimir Reva, Yurii Derkach, Vladimir Tetyorkin

Proceedings Volume 4454, (2001) https://doi.org/10.1117/12.448168

KEYWORDS: Quantum wells, Heterojunctions, Diodes, Photodiodes, Charge-coupled devices, Infrared detectors, Lithium, Mercury, Cadmium, Tellurium

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Proceedings Article | 22 February 2001 Paper

Photoelectrical properties of Hg1-xCdxTe epitaxial films and photodiodes with composition grading

Z. Ivasiv, Vladimir Tetyorkin

Proceedings Volume 4355, (2001) https://doi.org/10.1117/12.417769

KEYWORDS: Photodiodes, Liquid phase epitaxy, Mercury cadmium telluride, Photoresistors, Crystals, Infrared detectors, Absorption, Diffusion, Absorbance, Radon

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Proceedings Article | 22 February 2001 Paper

Dark current and noise in In/Zn/p-InAs and In/n-InAs

A. Lubchenko, A. Sukach, S. Sypko, Z. Ivasiv, Vladimir Tetyorkin, A. Voroschenko

Proceedings Volume 4355, (2001) https://doi.org/10.1117/12.417770

KEYWORDS: Indium arsenide, Metals, Resistance, Oxides, Zinc, Photodiodes, Annealing, Photodetectors, Semiconductors, Transform theory

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In review articles the methods of preparation as well as basic properties of ohmic contacts metal-semiconductors A₃B₅ are generalized. Chemical treatment of n-InAs result in pinning of a Fermi level by surface states in a conduction band. Thus, the near-surface area is enriched by majority carriers. The deposition of a metal on n-InAs with tunnel- transparent native oxide results in structures with an antiblocking contact. In chemically treated samples of p-InAs the pinning of a Fermi level in a conduction band causes a strong band bending of an order of the gap's width of InAs and formation of an inversion layer. The deposition of a metal on p-InAs transforms this structure into an imperfect Schottky diode, the height of a potential barrier in which does not depend on a work function of a metal. For transformation of rectifying structure metal-p-InAs into non-rectifying with linear current-voltage characteristics the formation of highly doped near-surface p +-InAs layer is used by means of epitaxial growth, or thermal diffusion of an acceptor impurity, such as Zn with its high solubility in InAs. The availability p+-InAs layer results in tunnel current mechanism through a depletion region, linear current-voltage characteristic and decrease of a contact resistance. The contact material to p+-type layer in the case of its epitaxial growth is Ti in the structure Au/Ti or Be in the structure Au/Be. The necessity of thermal treatment of such contacts was not indicated. In the case of diffusive formation of p+--area, as a rule, the alloys on the basis of indium In-Zn<5%> or In- Ni<1%>Zn<9%> are deposited by thermal evaporation followed by the thermal treatment. However, the temperature of the treatment was unknown in these articles. It should be pointed out that imperfect contacts can influence the magnitude of a noise and its frequency dependence and, therefore, the values of the detectivity of InAs photodiodes. In accordance with the above-stated, the purpose of the present work is to study influence of thermal treatment of In/Zn/p-InAs, In/n-InAs structures on their electrical and noise performances and finding-out capability of formation of low-noise ohmic contacts to p- and n-InAs materials.

Proceedings Article | 4 November 1999 Paper

Optical properties of Hg1-xCdxTe/CdTe epitaxial films with graded band gap

Z. Ivasiv, Vladimir Tetyorkin, Fiodor Sizov, V. Petryakov

Proceedings Volume 3890, (1999) https://doi.org/10.1117/12.368334

KEYWORDS: Absorption, Liquid phase epitaxy, Mercury cadmium telluride, Optical properties, Absorbance, Transmittance, Infrared radiation, Photodetectors, Data modeling, Computing systems

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Proceedings Article | 8 April 1999 Paper

Carrier transport mechanisms in narrow-gap photodiodes

Fiodor Sizov, Joanna Gumenjuk-Sichevskaya, Vladimir Tetyorkin

Proceedings Volume 3725, (1999) https://doi.org/10.1117/12.344748

KEYWORDS: Photodiodes, Diodes, Mercury cadmium telluride, Sensors, Silicon, Temperature metrology, Diffusion, Information operations, Semiconductors, Long wavelength infrared

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Proceedings Article | 26 August 1997 Paper

Electronic component design and testing for multielement IR arrays with CCD readout devices

Sergey Darchuk, Yurii Derkach, Yu. Kononenko, Vladimir Reva, Fiodor Sizov, Vladimir Tetyorkin

Proceedings Volume 3182, (1997) https://doi.org/10.1117/12.280411

KEYWORDS: Charge-coupled devices, Electronic components, Silicon, Multiplexers, Clocks

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Proceedings Article | 3 November 1995 Paper

HgCdTe infrared linear arrays for 3-5- and 8-12-um wavelength regions

Sergey Darchuk, Yurii Derkach, Yu. Kononenko, V. Petryakov, Vladimir Reva, Fiodor Sizov, Vladimir Tetyorkin

Proceedings Volume 2648, (1995) https://doi.org/10.1117/12.226144

KEYWORDS: Mercury cadmium telluride, Photodiodes, Charge-coupled devices, Sensors, Diodes, Diffusion, Silicon, Infrared radiation, Signal detection, Interfaces

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Proceedings Article | 16 October 1995 Paper

Properties of type II mismatched PbTe/PbS superlattices

Fiodor Sizov, Joanna Gumenjuk-Sichevskaya, Vladimir Tetyorkin, Vyacheslav Zabudsky, V. Golovin

Proceedings Volume 2373, (1995) https://doi.org/10.1117/12.224951

KEYWORDS: Laser sintering, Lead, Stereolithography, Magnetism, Absorption, Semiconductors, Heterojunctions, Multilayers, Superlattices, Interfaces

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Proceedings Article | 16 October 1995 Paper

Characterization of p-on-n HgCdTe diffusion photodiodes

Vladimir Tetyorkin, Jaroslaw Rutkowski, Antoni Rogalski, Fiodor Sizov

Proceedings Volume 2373, (1995) https://doi.org/10.1117/12.224983

KEYWORDS: Photodiodes, Mercury cadmium telluride, Diffusion, Long wavelength infrared, Mid-IR, Diodes, Arsenic, Temperature metrology, Information operations, Crystals

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SPIE Journal Paper | 1 May 1994

Mechanisms of dark conductivity and photosensitivity in PbSe polycrystalline films on glass and Si substrates

Vladimir Tetyorkin, V. Orletskii, Fiodor Sizov, N. Tashtanbajev, Alexandr Stepanushkin

OE, Vol. 33, Issue 05, (May 1994) https://doi.org/10.1117/12.10.1117/12.167103

KEYWORDS: Crystals, Silicon, Glasses, Silicon films, Lead, Interfaces, Semiconductors, Information operations, Photodetectors, Infrared detectors

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Showing 5 of 17 publications

SPIE Conference Volume | 26 August 1997

Material Science and Material Properties for Infrared Optoelectronics

Conference Committee Involvement (2)

Material Science and Material Properties for Infrared Optoelectronics

30 September 1996 | Uzhgorod, Ukraine

Material Science and Material Properties for Infrared Optoelectronics

30 September 1996 | Uzhgorod, Ukraine

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