Dr. Wei-Su Chen Profile

Dr. Wei-Su Chen

Project Manager at Industrial Technology Research Institute

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Author

Publications (18)

SPIE Journal Paper | 25 March 2014

Sidewall profile engineering for the reduction of cut exposures in self-aligned pitch division patterning

Frederick Chen, Wei-Su Chen, Ming-Jinn Tsai, Tzu-Kun Ku

JM3, Vol. 13, Issue 01, 011008, (March 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.1.011008

KEYWORDS: Optical lithography, Etching, Photoresist materials, Photomasks, Phase shifts, Photoresist developing, Modulation, Double patterning technology, Distortion, Anisotropic etching

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Proceedings Article | 12 April 2013 Paper

Sidewall profile inclination modulation mask (SPIMM): modification of an attenuated phase-shift mask for single-exposure double and multiple patterning

Frederick Chen, Wei-Su Chen, Ming-Jinn Tsai, Tzu-Kun Ku

Proceedings Volume 8683, 868311 (2013) https://doi.org/10.1117/12.2008886

KEYWORDS: Photomasks, Photoresist materials, Etching, Optical lithography, Phase shifts, Electron beam lithography, Modulation, Phase shift keying, Immersion lithography, Double patterning technology

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Proceedings Article | 29 March 2013 Paper

Sub-30nm TiN/Ti/HfOx pillar formed by tone reverse processes for RRAM applications

Wei-Su Chen, Peng-Sheng Chen, Hong Chih Chen, Hung-Wen Wei, Frederick Chen, Tzu-Kun Ku

Proceedings Volume 8685, 86850S (2013) https://doi.org/10.1117/12.2010377

KEYWORDS: Etching, Image processing, Scanning electron microscopy, Cadmium, Electron beam lithography, Tin, Oxides, Resistance, Atomic layer deposition, Critical dimension metrology

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New non-volatile memory, like RRAM, needs high aspect ratio (AR) bi-layer resist (BLR) pillar pattern to act as etch mask for sub-50 nm cell metal pillar definition [1]. HSQ/AR3 resist pillar is still not enough for patterning RRAM pillar since (1) AR is limited at ~7 which is still marginal in etching resistance, (2) BLR resist pillar CD is limited by dry development positive CD-bias, (3) BLR resist pillar is easy to collapse during venting to air, and (4) BLR resist pillar AR is lower for looser pillar densities which degrades the etching resistance. Tone reverse process flow for forming RRAM pillar is developed in this study to overcome these drawbacks. Thermal reflow assists the formation of sub-30 nm contact holes (C/Hs) on ZEP520A e-beam resist. Experimental results are summarized below. All the resolved CDs of C/H on ZEP520A with designed CD (DCD) of 40-100 nm are larger than 100 nm without proximity effect correction (PEC) on blank RRAM film stacking substrate. Smallest etched C/H on LTO after thermal reflow process is 14.4 nm. CD-bias of etched C/H on LTO relative to that of resist C/H after thermal reflow is larger for looser C/Hs. Thermal reflow of ZEP520A is C/H size before reflow, density, sidewall profile and reflow time dependent. NiOx hard mask is apparently without deposited into C/H smaller than 20 nm due to PVD deposition limit since the NiOx dot image disappeared after etching of LTO film for tone reverse. Smallest CD of TiN/Ti/HfOx RRAM pillar by tone reverse process flow is 28.8 nm using NiOx hard mask dot CD of 22.9 nm formed on 20.5 nm etched C/H on LTO after reflow. Uniform CD distribution of designed C/Hs result in uniformly distributed CDs after reflow / LTO etching / RRAM pillar formation. In summary, tone reverse process flow for RRAM pillar formation is successfully developed which has potential for patterning RRAM pillar of CD smaller than 20 nm in the help of NiOx hard mask deposition by atomic layer deposition (ALD) into oxide C/H in the future.

Proceedings Article | 29 March 2013 Paper

Sub-14 nm HSQ line patterning by e-beam dose proximity effect correction assisted with designed line CD/pitch split

Wei-Su Chen, Chu-Ya Yang, Chiung Yu Lo, Hung-Wen Wei, Frederick Chen, Tzu-Kun Ku

Proceedings Volume 8682, 868211 (2013) https://doi.org/10.1117/12.2010364

KEYWORDS: Standards development, Modulation, Image resolution, Electron beam lithography, Scattering, Critical dimension metrology, Laser scattering, Oxides, Backscatter, Point spread functions

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Proceedings Article | 20 March 2012 Paper

Substrate and underlayer dependence of sub-32nm e-beam HSQ pillar patterning process for RRAM application

Wei-Su Chen, Peng-Sheng Chen, Hung-Wen Wei, Frederick Chen, Ming-Jinn Tsai, Tzu-Kun Ku

Proceedings Volume 8325, 83250V (2012) https://doi.org/10.1117/12.915474

KEYWORDS: Etching, Cadmium, Image resolution, Electron beam lithography, Plasmas, Photomasks, Carbon, Coating, Plasma etching, Fluorine

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Proceedings Article | 17 March 2012 Paper

Transfer optimized dry development process of sub-32nm HSQ/AR3 BLR resist pillar from low-K etcher to metal etcher

Wei-Su Chen, Peng-Sheng Chen, Hung-Wen Wei, Frederick Chen, Ming-Jinn Tsai, Tzu-Kun Ku

Proceedings Volume 8328, 83280P (2012) https://doi.org/10.1117/12.915488

KEYWORDS: Etching, Oxygen, Photoresist processing, Plasma, Metals, Cadmium, Scanning electron microscopy, Plasma etching, Dry etching, Image processing

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Proceedings Article | 13 March 2012 Paper

Complementary polarity exposures for cost-effective line-cutting in multiple patterning lithography

Frederick Chen, Wei-Su Chen, Ming-Jinn Tsai, Tzu-Kun Ku

Proceedings Volume 8326, 83262L (2012) https://doi.org/10.1117/12.912800

KEYWORDS: Optical lithography, Electron beam lithography, Lithography, Extreme ultraviolet lithography, Etching, Photomasks, Extreme ultraviolet, Double patterning technology, Immersion lithography, Directed self assembly

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Proceedings Article | 16 April 2011 Paper

E-beam patterning and stability study of sub-22nm HSQ pillars

Wei-Su Chen, Ming-Jinn Tsai

Proceedings Volume 7972, 79722V (2011) https://doi.org/10.1117/12.878590

KEYWORDS: Electron beam lithography, Critical dimension metrology, Imaging systems, Electron beams, Standards development, Tin, Dry etching, Cadmium, Coating, Nanotechnology

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Proceedings Article | 16 April 2011 Paper

Process optimization of high aspect ratio sub-32nm HSQ/AR3 bi-layer resist pillar

Wei-Su Chen, Ming-Jinn Tsai

Proceedings Volume 7972, 79722P (2011) https://doi.org/10.1117/12.878591

KEYWORDS: Oxygen, Etching, Argon, Critical dimension metrology, Photoresist processing, Plasma, Photomasks, Electron beam lithography, Nanotechnology, Chemical mechanical planarization

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Proceedings Article | 30 March 2010 Paper

Dependence of 20-nm C/H CD windows on critical process parameters

Wei-Su Chen, Pei-Yi Gu, Ming-Jinn Tsai

Proceedings Volume 7639, 76390Y (2010) https://doi.org/10.1117/12.846275

KEYWORDS: Etching, Cadmium, Dry etching, Critical dimension metrology, Electron beam lithography, Photoresist processing, Scattering, Glasses, Nanotechnology, Polymerization

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Proceedings Article | 30 March 2010 Paper

Gap-fill type HSQ/ZEP520A bilayer resist process-(IV): HSQ-rod and HSQ-tip hardening processes

Wei-Su Chen, Ming-Jinn Tsai

Proceedings Volume 7639, 763913 (2010) https://doi.org/10.1117/12.846274

KEYWORDS: Photoresist processing, Cadmium, Image processing, Molecules, Dry etching, Hydrogen, Nanotechnology, Electron beam lithography, Plasma, Electronics

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Proceedings Article | 1 April 2009 Paper

Gap-fill type HSQ/ZEP520A bilayer resist process-(III): optimal process window for HSQ air-tip formation

Wei-Su Chen, Ming-Jinn Tsai

Proceedings Volume 7273, 72734D (2009) https://doi.org/10.1117/12.813623

KEYWORDS: Cadmium, Chlorine, Photoresist processing, Plasma, Silicon, Inspection, Lithium, Hydrogen, Dielectrics, Electrodes

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Proceedings Article | 1 April 2009 Paper

DUV-assisted e-beam resist process

Wei-Su Chen, Yen-Cheng Li, Ming-Jinn Tsai

Proceedings Volume 7273, 72730E (2009) https://doi.org/10.1117/12.813626

KEYWORDS: Deep ultraviolet, Photoresist processing, Critical dimension metrology, Cadmium, Chromium, Electron beams, Electron beam lithography, Solids, Electron beam direct write lithography, Lithography

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Proceedings Article | 3 April 2008 Paper

Gap-fill type HSQ/ZEP520A bilayer resist process–(II): HSQ island and spacer formation

Wei-Su Chen, Pei-Yi Gu, Ming-Jer Kao, Ming-Jinn Tsai

Proceedings Volume 6923, 69232Y (2008) https://doi.org/10.1117/12.772506

KEYWORDS: Etching, Plasma, Photoresist processing, Oxygen, Coating, Cadmium, Electron beam lithography, Plasma etching, FT-IR spectroscopy, Resistance

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Hydrogen silsesquioxane (HSQ) bilayer resist (BLR) processes are attractive to obtain nano-sized features with high aspect ratio by dry-transferring thin e-beam pattern to thick underlayer to strengthen the etch resistance. However, there are drawbacks of high e-beam dosage for HSQ patterning and difficulty in controlling the underlayer resist profile by O2 plasma with anisotropic etching. In this study gap-fill type HSQ/ZEP520A BLR processes were studied to overcome these problems. The advantage of gap-fill type BLR processes is that the dosage for patterning on thick ZEP520A e-beam positive resist is not as high as that for HSQ and the resist profile can be tuned by exposure and development processes without depending on O2 plasma. By gap-filling of HSQ in ZEP520A trench patterns and then stripping ZEP520A by O2 plasma the tone is conversed from trench to line. The gap filling quality attributes include (1) the void size and number of HSQ lines and (2) spacer adhesion on HSQ line edge. Only the non-diluted HSQ solution could completely fill the trench and the HSQ line formed after stripping of ZEP520A. The spacer formed by diluted HSQ is found to be composed of oxide without any ZEP520A-related elements by FTIR analysis. The ZEP520A trench CD monotonically increases with decrease of W/L ratio. The HSQ line CD also follows the same trend. The extension of HSQ in ZEP520A, i.e. HSQ line CD minus ZEP520A trench CD, basically follows the reverse trend. It is therefore concluded that extension of HSQ lines in ZEP520A and HSQ spacers are formed from the diffused HSQ in trench sidewall without any reaction with ZEP520A. Voids were generally observed at the bottom of the HSQ line. Size and quantity of voids are larger for lower W/L ratios, indicating that the voids were formed due to insufficient HSQ volume for gap-filling. Increasing e-beam dose, baking or reflow temperature, and reflow of ZEP520A before HSQ coating could reduce the void formation. Multiple gap-filling with 1:14 diluted HSQ can lead to void-free lines. The HSQ spacer becomes thicker with less diluted HSQ, slower spin speed, reduced ZEP520A development time and HSQ PCB temperature. The smallest HSQ island of 46.3 nm was obtained by two reflows plus HSQ gap filling and baking processes, a significant size for the hardmask of metal island etching or mold of contact-hole nano-imprint for 45 nm node. The width of HSQ spacers is generally within 10-25 nm, potentially applicable to transistor gate patterning in 22 nm node and beyond.

Proceedings Article | 3 April 2008 Paper

Gap-fill type HSQ/ZEP520A bilayer resist process–(I): HSQ-coated ZEP520A CD shrinkage for 32-nm trench patterns

Wei-Su Chen, Ming-Jer Kao, Ming-Jinn Tsai

Proceedings Volume 6923, 69232L (2008) https://doi.org/10.1117/12.772496

KEYWORDS: Cadmium, Coating, Photoresist processing, Hydrogen, Distortion, Transistors, Electron beam lithography, Scanning electron microscopy, Inspection, Electronics

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Proceedings Article | 22 March 2007 Paper

Sub 10-nm contact holes with aspect ratio over sixty formed by e-beam resist shrinkage techniques

Wei-Su Chen, Ming-Jer Kao, Ming-Jinn Tsai

Proceedings Volume 6519, 651945 (2007) https://doi.org/10.1117/12.708436

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Cadmium, Semiconducting wafers, Image processing, Compact discs, Electron beam lithography, Spatial frequencies, Temperature metrology, Thermal effects

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Proceedings Article | 29 March 2006 Paper

40-100nm contact-hole processes of ZEP520A e-beam resist on PCM prototyping applications

Wei-Su Chen, Yen Chuo, Hong-Hui Hsu, Yi-Chan Chen, Chien-Min Lee, Ming-Jer Kao, Ming-Jinn Tsai

Proceedings Volume 6153, 615349 (2006) https://doi.org/10.1117/12.656192

KEYWORDS: Critical dimension metrology, Electrodes, Cadmium, Prototyping, Electron beam lithography, Photoresist processing, Deep ultraviolet, Scanning electron microscopy, Semiconducting wafers, Optical alignment

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Proceedings Article | 6 May 2005 Paper

E-beam direct-write lithography for the 45nm node using the novel STEAG HamaTech single substrate coat-bake-develop ModuTrack

L. Berger, W. Dieckmann, C. Krauss, P. Dress, J. Waldorf, C. Y. Cheng, S. L. Wei, W. S. Chen, M. J. Kao, M. J. Tsai

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.596484

KEYWORDS: Coating, Semiconducting wafers, Photomasks, Electron beam direct write lithography, Standards development, Direct write lithography, Lithography, Calibration, Field programmable gate arrays, Head-mounted displays

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Showing 5 of 18 publications

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