The infrared transmitting electromagnetic interference shielding (Infrared-EMI) filters were fabricated through transferring multilayer graphene on ZnS and As40Se60 infrared substrates. The monolayer graphene was grown by chemical vapor deposition (CVD) catalyzed by copper foil. The carrier mobility of monolayer graphene transferred on quartz glass is 1318.9 cm2 /V·s, sheet resistance (Rs) is 483 Ω/ and I(2D)/I(G) of Raman result is 2.27. The monolayer graphene on copper foil was transferred on ZnS and As40Se60 substrates using wet chemical etching method, the multilayer graphene were overlaid on ZnS and As40Se60 substrates by repeating the same transferring process. The Rs of monolayer graphene film on ZnS substrate is 1100 Ω/ and decreases to 65 Ω/ as the number of graphene layer rises to 13. The Rs of monolayer graphene on As40Se60 substrate is 1414 Ω/ and decreases to 68 Ω/ as the number of graphene layer is up to 17. ZnS substrate transferred with 13 layers of graphene shows relative 94.7 % infrared transmittance in 8~12 μm waveband. As40Se6 substrate transferred with 17 layers of graphene on As40Se6 substrate show relative 81.3 % infrared transmittance in 8~18 μm waveband. OTA300 - 104 V. The average EMI shielding effectiveness of multilayer graphene on ZnS (13 layers) and on As40Se60 substrates (17 layers) in a frequency range of 30 MHz~1.5 GHz is 15.6 dB and 13.3 dB, respectively. ZnS-graphene and As40Se60-graphene Infrared-EMI filter realize the coexistence of infrared transmitting and EMI shielding function.
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