Dr. Wei Wu Profile

Dr. Wei Wu

Section Manager at NXP Semiconductors

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Author

Publications (24)

Proceedings Article | 21 March 2006 Paper

High transmission mask technology for 45nm node imaging

Will Conley, Nicoló Morgana, Bryan Kasprowicz, Mike Cangemi, Matt Lassiter, Lloyd Litt, Marc Cangemi, Rand Cottle, Wei Wu, Jonathan Cobb, Young-Mog Ham, Kevin Lucas, Bernie Roman, Chris Progler

Proceedings Volume 6154, 615411 (2006) https://doi.org/10.1117/12.659353

KEYWORDS: Photomasks, Polarization, Etching, Plasma etching, Manufacturing, Plasma, Semiconducting wafers, Chromium, Lithography, Chlorine

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Proceedings Article | 15 March 2006 Paper

High transmission mask technology for 45nm node imaging

Will Conley, Nicoló Morgana, Bryan Kasprowicz, Mike Cangemi, Matt Lassiter, Lloyd Litt, Marc Cangemi, Rand Cottle, Wei Wu, Jonathan Cobb, Young-Mog Ham, Kevin Lucas, Bernie Roman, Chris Progler

Proceedings Volume 6154, 61541D (2006) https://doi.org/10.1117/12.659390

KEYWORDS: Photomasks, Polarization, Etching, Plasma etching, Manufacturing, Plasma, Semiconducting wafers, Chromium, Lithography, Chlorine

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Proceedings Article | 12 May 2005 Paper

The impact of illumination on feature fidelity for CPL mask technology

Jan Kuijten, Arjan Verhappen, Will Conley, Stephan van de Goor, Lloyd Litt, Wei Wu, Kevin Lucas, Bernie Roman, Bryan Kasprowicz, Chris Progler, Robert Socha, Doug van den Broeke, Kurt Wampler, Tom Laidig, Stephen Hsu

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.605481

KEYWORDS: Chromium, Photomasks, Nanoimprint lithography, Phase shifts, Resolution enhancement technologies, Optical proximity correction, Mask making, Semiconductors, Photoresist materials, Manufacturing

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Proceedings Article | 12 May 2005 Paper

Tunable transmission phase mask options for 65/45nm node gate and contact processing

Bryan Kasprowicz, Will Conley, Young-Mog Ham, Michael Cangemi, Nicolo Morgana, Marc Cangemi, Rand Cottle, Christopher Progler, Wei Wu, Lloyd Litt, Jonathan Cobb, Bernie Roman

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601011

KEYWORDS: Photomasks, Manufacturing, Etching, Plasma etching, Lithography, Chromium, Phase shifts, Reticles, Semiconducting wafers, Sputter deposition

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Proceedings Article | 12 May 2005 Paper

Applications of CPL mask technology for sub-65nm gate imaging

Lloyd Litt, Will Conley, Wei Wu, Richie Peters, Colita Parker, Jonathan Cobb, Bryan Kasprowicz, Doug van den Broeke, J. Park, Ramkumar Karur-Shanmugam

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600912

KEYWORDS: Reticles, Photomasks, Manufacturing, Inspection, Critical dimension metrology, Semiconducting wafers, Optical proximity correction, Lithography, Logic, Etching

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The requirements for critical dimension control on gate layer for high performance products are increasingly demanding. Phase shift techniques provide aerial image enhancement, which can translate into improved process window performance and greater critical dimension (CD) control if properly applied. Unfortunately, the application of hard shifter technology to production requires significant effort in layout and optical proximity correction (OPC) application. Chromeless Phase Lithography (CPL) has several advantages over complementary phase mask (c:PSM) such as use of a single mask, and lack of phase placement 'coloring' conflicts and phase imbalance issues. CPL does have implementation issues that must be resolved before it can be used in full-scale production. CPL mask designs can be approached by separating features into three zones based on several parameters, including size relative to the lithographic resolution of the stepper lens, wavelength, and illumination conditions defined. Features are placed into buckets for different treatment zones. Zone 1 features are constructed with 100% transmission phase shifted structures and Zone 3 features are chrome (binary) structures. Features that fall into Zone 2, which are too wide to be defined using the 100% transmission of pure CPL (i.e. have negative mask error factor, MEEF) are the most troublesome and can be approached in several ways. The authors have investigated the application of zebra structures of various sizes to product type layouts. Previous work to investigate CPL using test structures set the groundwork for the more difficult task of applying CPL rules to actual random logic design layouts, which include many zone transitions. Mask making limitations have been identified that play a role in the zebra sizing that can be applied to Zone 2 features. The elimination of Zone 2 regions was also investigated in an effort to simplify the application of CPL and improve manufacturability of reticle through data enhancements.

Proceedings Article | 12 May 2005 Paper

Strategies of optical proximity correction dedicated to chromeless phase lithography for 65 and 45 nm node

Emilien Robert, Philippe Thony, Kevin Lucas, Daniel Henry, Bryan Kasprowicz, Sergei Postnikov, Will Conley, Wei Wu, Lloyd Litt

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601743

KEYWORDS: Chromium, Photomasks, Scattering, Semiconducting wafers, Optical proximity correction, Lithography, Phase shifts, Scanners, Diffraction, Etching

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Proceedings Article | 12 May 2005 Paper

High transmission mask technology for 45nm node imaging

Will Conley, Mike Cangemi, Bryan Kasprowicz, Matt Lassiter, Lloyd Litt, Marc Cangemi, Rand Cottle, Mark Smith, Wei Wu, Jonathan Cobb, Rusty Carter, Young-mog Ham, Kevin Lucas, Bernie Roman, Chris Progler

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601584

KEYWORDS: Photomasks, Image processing, Manufacturing, Image transmission, Lithography, Photoresist materials, Nanoimprint lithography, Image resolution, Semiconductors, 193nm lithography

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Proceedings Article | 20 August 2004 Paper

CPL reticle technology for advanced device applications

Willard Conley, Douglas Van Den Broeke, Robert Socha, Wei Wu, Lloyd Litt, Kevin Lucas, Bernard Roman, Richard Peters, Colita Parker, J. Fung Chen, Kurt Wampler, Thomas Laidig, Erika Schaefer, Jan-Pieter Kuijten, Arjan Verhappen, Stephan van de Goor, Martin Chaplin, Bryan Kasprowicz, Christopher Progler, Emilien Robert, Philippe Thony, Michael Hathorn

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557802

KEYWORDS: Photomasks, Optical proximity correction, Image processing, Reticles, Resolution enhancement technologies, Phase shifts, Mask making, Scanning electron microscopy, Quartz, Binary data

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Proceedings Article | 20 August 2004 Paper

CPL mask technology for sub-100-nm contact hole imaging

Bryan Kasprowicz, Willard Conley, Lloyd Litt, Douglas Van Den Broeke, Patrick Montgomery, Robert Socha, Wei Wu, Kevin Lucas, Bernard Roman, J. Fung Chen, Kurt Wampler, Thomas Laidig, Christopher Progler, Michael Hathorn

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557755

KEYWORDS: Photomasks, Reticles, Manufacturing, Inspection, Lithography, Image processing, Semiconducting wafers, Quartz, Metrology, Optical lithography

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Proceedings Article | 28 May 2004 Paper

The application of CPL reticle technology for the 0.045-mm node

Will Conley, Douglas Van Den Broeke, Robert Socha, Wei Wu, Lloyd Litt, Kevin Lucas, Bernard Roman, Richard Peters, Colita Parker, Fung Chen, Kurt Wampler, Thomas Laidig, Erika Schaefer, Jan-Pieter Kuijten, Arjan Verhappen, Stephan van de Goor, Martin Chaplin, Bryan Kasprowicz, Christopher Progler, Emilien Robert, Philippe Thony

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537613

KEYWORDS: Photomasks, Optical proximity correction, Reticles, Image processing, Resolution enhancement technologies, Phase shifts, Mask making, Scanning electron microscopy, Manufacturing, Quartz

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Proceedings Article | 28 May 2004 Paper

Defect printability in CPL mask technology

Jan-Pieter Kuijten, Arjan Verhappen, Wil Pijnenburg, Will Conley, Lloyd Litt, Wei Wu, Patrick Montgomery, Bernard Roman, Bryan Kasprowicz, Christopher Progler, Robert Socha, Douglas Van Den Broeke, Erika Schaefer, Pat Cook

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537619

KEYWORDS: Photomasks, Resolution enhancement technologies, Reticles, Manufacturing, Scanning electron microscopy, Semiconductors, Phase shifts, Binary data, Lithography, Semiconducting wafers

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Proceedings Article | 28 May 2004 Paper

RET integration of CPL technology for random logic

Stephen Hsu, Douglas Van Den Broeke, J. Fung Chen, Xuelong Shi, Michael Hsu, Thomas Laidig, Will Conley, Lloyd Litt, Wei Wu

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537414

KEYWORDS: Photomasks, Nanoimprint lithography, Image transmission, Manufacturing, Optical proximity correction, Diffraction, Transmittance, Resolution enhancement technologies, Semiconducting wafers, Phase shifts

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Proceedings Article | 28 May 2004 Paper

The impact of MEEF through pitch for 120-nm contact holes

Lloyd Litt, Wei Wu, Will Conley, Kevin Lucas, Bernard Roman, Patrick Montgomery, Bryan Kasprowicz, Christopher Progler, Robert Socha, Arjan Verhappen, Kurt Wampler, Erika Schaefer, Pat Cook, Jan-Pieter Kuijten, Wil Pijnenburg

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537437

KEYWORDS: Fiber optic illuminators, Atrial fibrillation, Critical dimension metrology, Resolution enhancement technologies, Photomasks, Semiconducting wafers, Manufacturing, Reticles, Nanoimprint lithography, Binary data

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Proceedings Article | 26 June 2003 Paper

Process, design, and optical proximity correction requirements for the 65nm device generation

Kevin Lucas, Patrick Montgomery, Lloyd Litt, Will Conley, Sergei Postnikov, Wei Wu, Chi-Min Yuan, Marc Olivares, Kirk Strozewski, Russell Carter, James Vasek, David Smith, Eric Fanucchi, Vincent Wiaux, Geert Vandenberghe, Olivier Toublan, Arjan Verhappen, Jan Kuijten, Johannes van Wingerden, Bryan Kasprowicz, Jeffrey Tracy, Christopher Progler, Eugene Shiro, Igor Topouzov, Karl Wimmer, Bernard Roman

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485498

KEYWORDS: Reticles, Optical lithography, Optical proximity correction, Lithography, 193nm lithography, Scanners, Logic, Optical design, Lithographic illumination, SRAF

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Proceedings Article | 26 June 2003 Paper

Application of CPL reticle technology for the 65- and 50-nm node

Will Conley, Douglas Van Den Broeke, Robert Socha, Wei Wu, Lloyd Litt, Kevin Lucas, Carla Nelson-Thomas, Bernard Roman, J. Fung Chen, Kurt Wampler, Thomas Laidig, Stephen Hsu, Erika Schaefer, Shawn Cassel, Linda Yu, Bryan Kasprowicz, Christopher Progler, John Petersen, David Gerold, Mark John Maslow

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485515

KEYWORDS: Photomasks, Reticles, Optical proximity correction, Image processing, Resolution enhancement technologies, Manufacturing, Phase shifts, Mask making, Quartz, Lithography

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Proceedings Article | 26 June 2003 Paper

Single-write self-aligned rim-phase-shift process

Cesar Garza, Wei Wu, Bernard Roman, Pawitter Mangat, Kevin Nordquist, William Dauksher

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485427

KEYWORDS: Phase shifts, Lithography, Photomasks, Optical lithography, Quartz, Inspection, Etching, Critical dimension metrology, Optical proximity correction, Manufacturing

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Proceedings Article | 12 June 2003 Paper

Fabrication of integrated circuits with high yield using ultrathin resist processes

Richard Peters, Sergei Postnikov, Jonathan Cobb, S. Dakshina-Murthy, Tab Stephens, Colita Parker, Eric Luckowski, Arturo Martinez, Wei Wu, Scott Hector

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485122

KEYWORDS: Photoresist processing, Transistors, Etching, Semiconducting wafers, Plasma etching, Plasma, Silicon, Resistance, Defect inspection, Optical lithography

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Proceedings Article | 27 December 2002 Paper

Application of chromeless phase lithography (CPL) masks in ArF lithography

Bryan Kasprowicz, Christopher Progler, Wei Wu, Will Conley, Lloyd Litt, Douglas Van Den Broeke, Kurt Wampler, Robert Socha

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468107

KEYWORDS: Photomasks, Lithography, Quartz, Etching, Manufacturing, Reticles, Inspection, Antireflective coatings, Optical proximity correction, Binary data

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Proceedings Article | 30 July 2002 Paper

Extending KrF to 100-nm imaging with high-NA- and chromeless phase lithography technology

Robert Socha, Douglas Van Den Broeke, Linda Yu, Will Conley, Wei Wu, J. Fung Chen, John Petersen, David Gerold, Judith van Praagh, Richard Droste, Donis Flagello, Stephen Hsu

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474594

KEYWORDS: Reticles, Lithography, Scanning electron microscopy, Nanoimprint lithography, Diffraction, Quartz, Photomasks, Capacitors, Phase shifts, Lithographic illumination

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Proceedings Article | 30 July 2002 Paper

Development of a sub-100-nm integrated imaging system using chromeless phase-shifting imaging with very high NA KrF exposure and off-axis illumination

John Petersen, Will Conley, Bernard Roman, Lloyd Litt, Kevin Lucas, Wei Wu, Douglas Van Den Broeke, J. Fung Chen, Thomas Laidig, Kurt Wampler, David Gerold, Robert Socha, Judith van Praagh, Richard Droste

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474599

KEYWORDS: Diffraction, Phase shifts, Photomasks, Image processing, Halftones, Imaging systems, Transmittance, Opacity, Scattering, Photoresist materials

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Proceedings Article | 24 July 2002 Paper

Integration of UTR processes into MPU IC manufacturing flows

Jonathan Cobb, S. Dakshina-Murthy, Colita Parker, Eric Luckowski, Arturo Martinez, Richard Peters, Wei Wu, Scott Hector

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474226

KEYWORDS: Etching, Line edge roughness, Photoresist processing, Semiconducting wafers, Scanning electron microscopy, Transistors, Optical lithography, Photoresist materials, Electron beam lithography, Image processing

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Proceedings Article | 12 July 2002 Paper

Development of a sub-100nm integrated imaging system using chromeless phase-shifting imaging with very high NA KrF exposure and off-axis illumination

John Petersen, Will Conley, Bernard Roman, Lloyd Litt, Kevin Lucas, Wei Wu, Douglas Van Den Broeke, J. Fung Chen, Thomas Laidig, Kurt Wampler, David Gerold, Mark Maslow, Robert Socha, Judith van Praagh, Richard Droste

Proceedings Volume 4692, (2002) https://doi.org/10.1117/12.475692

KEYWORDS: Diffraction, Phase shifts, Photomasks, Image processing, Imaging systems, Opacity, Halftones, Tolerancing, Scattering, Lithography

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Examining features of varying pitch imaged using phase- shifting masks shows a pitch dependence eon the transmission best suited for optimum imaging. The reason for this deals with the relative magnitude of the zero and higher diffraction orders that are formed as the exposing wavelength passes through the plurality of zero and higher diffraction orders that are formed as the exposing wavelength passes through the plurality of zero and 180- degree phase-shifted regions. Subsequently, some of the diffraction orders are collected and projected to form the image of the object. chromeless Phase-Shift Lithography (CPL) deals with using half-toning structures to manipulate these relative magnitudes of these diffraction orders to ultimately construct the desired projected image. A key feature of CPL is that with the ability to manipulate the diffraction orders, a single weak phase-shifting mask can be made to emulate any weak phase-shifting mask and therefore the optimal imaging condition of any pattern can be placed on a single mask regardless of the type of weak phase- shifter that produces that result. In addition, these structures are used to render the plurality of size, shape and pitch such that the formed images produce their respective desired size and shape with sufficient image process tolerance. These images are typically made under identical exposure conditions, but not limited to single exposure condition. These half toning structures can be used exterior, as assist features, or interior to the primary feature. These structures can range in transmission from 0 percent to 100 percent and they can be phase-shifted relative to the primary features or not. Thus CPL deals with the design, layout, and utilization of transparent and semi- transparent phase-shift masks and their use in an integrated imaging solution of exposure tool, mask and the photoresist recording media. This paper describes the method of diffraction matching, provides an example and reviews some experimental data using high numerical aperture KrF exposure.

Proceedings Article | 24 August 2001 Paper

Integration of ultrathin resist processes into MPU IC manufacturing flows

Jonathan Cobb, Will Conley, Todd Guenther, Fred Huang, Jen-Jiang Lee, Tom Lii, S. Dakshina-Murthy, Colita Parker, Saifi Usmani, Wei Wu, Scott Hector

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436856

KEYWORDS: Etching, Photoresist processing, Coating, Extreme ultraviolet lithography, Optical lithography, Semiconducting wafers, Manufacturing, Resistance, Metals, Cadmium

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Proceedings Article | 1 July 1991 Paper

"Golden standard" wafer design for optical stepper characterization

Kevin Kemp, Charles King, Wei Wu, Charles Stager

Proceedings Volume 1464, (1991) https://doi.org/10.1117/12.44440

KEYWORDS: Semiconducting wafers, Distortion, Optical alignment, Photoresist materials, Wafer-level optics, Metrology, Silicon, Reticles, Standards development, Optical design

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