Prof. Weijie Lu Profile

Prof. Weijie Lu

Associate Professor at Fisk Univ

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Author

Publications (15)

Proceedings Article | 3 October 2013 Paper

Investigation of maple-deposited DNA films for graphene-based device applications

Adrienne Williams, Angela Campbell, Fahima Ouchen, Weijie Lu, John Grant, James Grote

Proceedings Volume 8817, 88170L (2013) https://doi.org/10.1117/12.2027218

KEYWORDS: Graphene, Silicon carbide, Field effect transistors, Dielectrics, Thin films, Silica, Raman spectroscopy, Chemical species, Sulfur, Atomic force microscopy

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Proceedings Article | 24 August 2010 Paper

Rutherford backscattering and optical studies for ZnO thin films on sapphire substrates grown by metalorganic chemical vapor deposition

Yee Ling Chung, Lin Li, Shude Yao, Zhe Chuan Feng, William Fenwick, Tahir Zaidi, Ian Ferguson, Weijie Lu

Proceedings Volume 7784, 778416 (2010) https://doi.org/10.1117/12.859109

KEYWORDS: Zinc oxide, Sapphire, Thin films, Scanning electron microscopy, Metalorganic chemical vapor deposition, Transmittance, Atomic force microscopy, Backscatter, Refractive index, Zinc

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Proceedings Article | 18 August 2010 Paper

High brightness GaN light emitting diodes with different barrier widths in quantum wells for general lighting application

I-Hsiang Hung, Yu-Hsiang Lai, Zhe Chuan Feng, Gang Li, Ian Ferguson, Weijie Lu

Proceedings Volume 7784, 77840Z (2010) https://doi.org/10.1117/12.859780

KEYWORDS: Light emitting diodes, Quantum wells, Luminescence, Indium gallium nitride, Temperature metrology, Gallium nitride, X-ray diffraction, Sapphire, Metalorganic chemical vapor deposition, X-rays

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Proceedings Article | 18 August 2010 Paper

Optical, structural, and nuclear scientific studies of AlGaN with high Al composition

Tse Yang Lin, Yee Ling Chung, Lin Li, Shude Yao, Y. C. Lee, Zhe Chuan Feng, Ian Ferguson, Weijie Lu

Proceedings Volume 7784, 778415 (2010) https://doi.org/10.1117/12.859106

KEYWORDS: Aluminum, Sapphire, Gallium, Raman spectroscopy, Scanning electron microscopy, Metalorganic chemical vapor deposition, X-ray diffraction, Aluminum nitride, Backscatter, X-rays

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Proceedings Article | 18 August 2010 Paper

Optical, structural properties and experimental procedures of GaGdN grown by metalorganic chemical vapor deposition

I-Hsiang Hung, Yu-Hsiang Lai, Zhe Chuan Feng, Shalini Gupta, Tahir Zaidi, Ian Ferguson, Weijie Lu

Proceedings Volume 7784, 77840H (2010) https://doi.org/10.1117/12.859107

KEYWORDS: Gadolinium, Gallium nitride, Electrons, Metalorganic chemical vapor deposition, Chemical elements, Semiconductors, Luminescence, Doping, Photons, Excitons

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Proceedings Article | 12 September 2009 Paper

Synchrotron radiation x-ray absorption fine-structure and Raman studies on CdZnTe ternary alloys

Yu Li Wu, Yen-Ting Chen, Zhe Chuan Feng, Jyh-Fu Lee, P. Becla, Weijie Lu

Proceedings Volume 7449, 74490Q (2009) https://doi.org/10.1117/12.825823

KEYWORDS: Tellurium, Raman spectroscopy, Crystals, Absorption, Zinc, X-rays, Sensors, Phonons, Spectroscopy, Chemical species

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Proceedings Article | 22 August 2009 Paper

Synchrotron radiation x-ray absorption fine-structure and raman scattering studies on 6H-SiC materials

Yi-Li Tu, Zhe Chuan Feng, Ling-Yun Jang, Weijie Lu

Proceedings Volume 7425, 74250Y (2009) https://doi.org/10.1117/12.825811

KEYWORDS: Silicon carbide, Absorption, X-rays, Chemical species, Doping, Raman spectroscopy, Silicon, Crystals, Synchrotron radiation, Raman scattering

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Proceedings Article | 18 August 2009 Paper

Nanoscale InGaN/GaN on ZnO substrate for LED applications

I-Hsiang Hung, You-Ren Lan, Tsung Han Wu, Zhe Chuan Feng, Nola Li, Hongbo Yu, Ian Ferguson, Weijie Lu

Proceedings Volume 7422, 74220K (2009) https://doi.org/10.1117/12.825851

KEYWORDS: Zinc oxide, Indium gallium nitride, Gallium nitride, Silicon, Refractive index, Doping, Raman spectroscopy, Gallium, Metalorganic chemical vapor deposition, Luminescence

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Proceedings Article | 18 August 2009 Paper

Optical properties and material studies of InGaN/GaN multi-quantum well light emitting diode wafers with different structures

T. Kuo, T. Lin, Z. Feng, W. Liu, S. Chua, H. Tsai, J. Yang, Y. Huang, Ian Ferguson, W. Lu

Proceedings Volume 7422, 74220Q (2009) https://doi.org/10.1117/12.825895

KEYWORDS: Indium, Luminescence, Indium gallium nitride, Light emitting diodes, Quantum wells, X-ray diffraction, Gallium nitride, Optical properties, Transmission electron microscopy, Absorption

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Proceedings Article | 9 September 2008 Paper

Optical and material characteristics of InAs/GaAs quantum dots

Sa Huang, Pin-Fang Huang, Zhe Chuan Feng, April Brown, Weijie Lu

Proceedings Volume 7039, 70391I (2008) https://doi.org/10.1117/12.795580

KEYWORDS: Quantum dots, Annealing, Indium arsenide, Luminescence, Atomic force microscopy, Gallium arsenide, Scattering, Molecular beam epitaxy, Temperature metrology, Atomic force microscope

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Proceedings Article | 4 September 2008 Paper

Field emission properties of multi-wall carbon nanotubes

Zhe-Chuan Feng, Yi-Zhe Huang, Jyh-Hua Ting, Li-Chyong Chen, Weijie Lu

Proceedings Volume 7037, 70370R (2008) https://doi.org/10.1117/12.795563

KEYWORDS: Carbon nanotubes, Nickel, Microwave radiation, Plasma enhanced chemical vapor deposition, Titanium, Hydrogen, Plasma, Chemical analysis, Diodes, Carbon

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Proceedings Article | 2 September 2008 Paper

Optical and structural properties of dual wavelength InGaN/GaN multiple quantum well light emitting diodes

Zhe Chuan Feng, Ting-Wei Kuo, C. Y. Wu, Hong-Ling Tsai, Jer-Ren Yang, Y. S. Huang, Ian Ferguson, Weijie Lu

Proceedings Volume 7058, 70580S (2008) https://doi.org/10.1117/12.795255

KEYWORDS: Light emitting diodes, Quantum wells, Indium gallium nitride, Luminescence, Indium, Gallium nitride, Metalorganic chemical vapor deposition, Temperature metrology, Sapphire, Excitons

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Proceedings Article | 29 August 2008 Paper

Surface and material characteristics of Ga2O3 thin films on GaAs

Ping-Fong Huang, Yen-Ting Chen, H. Lee, Zhe Chuan Feng, Hao-Hsiung Lin, Weijie Lu

Proceedings Volume 7067, 70670M (2008) https://doi.org/10.1117/12.795535

KEYWORDS: Gallium, Annealing, Gallium arsenide, Oxygen, X-ray diffraction, Scanning electron microscopy, Interfaces, X-rays, Photoemission spectroscopy, Thin films

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Proceedings Article | 28 September 2007 Paper

Optical and structural characteristics of high-performance InGaN/GaN multiple quantum well light-emitting diodes: effects of nano-structural features

Z. Lee, Z. Feng, H. Tsai, J. Yang, A. Li, L. Chen, K. Chen, Y. Chen, I. Ferguson, W. Lu

Proceedings Volume 6797, 67970S (2007) https://doi.org/10.1117/12.758980

KEYWORDS: Indium gallium nitride, Quantum wells, Luminescence, Light emitting diodes, Gallium nitride, Excitons, Transmission electron microscopy, Blue light emitting diodes, Temperature metrology, Satellites

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Proceedings Article | 25 March 2005 Paper

Growth of carbon nanotubes by sublimation of silicon carbide substrates

William Mitchel, John Boeckl, David Tomlin, Weijie Lu, John Rigueur, Jonathan Reynolds

Proceedings Volume 5732, (2005) https://doi.org/10.1117/12.590456

KEYWORDS: Silicon carbide, Carbon, Silicon, Carbon nanotubes, Transmission electron microscopy, Raman spectroscopy, Semiconducting wafers, Oxygen, Scanning electron microscopy, Metals

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Showing 5 of 15 publications

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