Mr. Wenliang Xiao Profile

Wenliang Xiao

at Beijing Univ of Posts and Telecommunications

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Proceedings Article | 24 November 2021 Paper

Sensitive parameters affecting dark current characteristics of SCD

Yifan Sun, Wenliang Xiao, Tong Sun, Dan Liang, Xiaoguang Ma, Lihong Han, Pengfei Lu, Shumin Wang, Haizhi Song

Proceedings Volume 12061, 120611L (2021) https://doi.org/10.1117/12.2606848

KEYWORDS: Sensors, Doping, Gallium antimonide, Diffusion, Long wavelength infrared, Indium arsenide, Interfaces, Absorption

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The sensitive parameters affecting the dark current characteristics are further studied by using InAs/GaSb type II superlattice (T2SL) pBpp structure long wavelength Infrared photodetectors.Generation of recombination (G-R), surface leakage current and tunneling current are the main components of dark current. Using pBpp structure can suppress them effectively, thereby decreasing dark current. Based on the k ∙ p method, the band structure of InAs/GaSb T2SL and InAs/AlSb T2SL can be obtained by solving the 8-band k ∙ p model. We have calculated different doping levels of pB_pp detector and different layer thicknesses of pB_pp detector. For pB_pp device, we consider the dark current for different contact layer doping and different absorber layer doping. We also study the influence of different contact layer thicknesses and different absorber layer thicknesses on dark current. The dark current of pB_pp detector is dominant by tunneling current at low temperature, and diffusion is the main limiting mechanism in dark current at high temperature, for barrier layer inhibits generation-recombination contribution. Eventually, the dark current of a pB_pp structure has been calculated for versus voltage at 77 K.

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