Dr. Werner Gillijns Profile

Dr. Werner Gillijns

Researcher Optical Lithography at imec

SPIE Involvement:

Author

Publications (48)

Proceedings Article | 12 December 2023 Poster + Paper

Poster + Paper

Aerial imaging (AIMS) based computational lithography model calibration and mask metrology for high-NA EUV

Werner Gillijns, Balakumar Baskaran, Joost Bekaert, Nitesh Pandey, Stefan Hunsche, Adam Lyons, Christoph Hennerkes, Andreas Verch, Maximilian Albert, Grizelda Kersteen, Renzo Capelli

Proceedings Volume PC12751, PC127510Z (2023) https://doi.org/10.1117/12.2688109

KEYWORDS: Calibration, Metrology, Scanning electron microscopy, Data modeling, Extreme ultraviolet, Critical dimension metrology, Semiconducting wafers, Computational lithography, Design, Optical proximity correction

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Proceedings Article | 22 November 2023 Presentation

Presentation

Application of SONR for a better OPC model with a EUV curvilinear photomask

Chih-I Wei, Rehab Ali, Andrew Burbine, Fan Jiang, Germain Fenger, Seulki Kang, Kotaro Maruyama, Yuichiro Yamazaki, Sujan Sarkar, Matteo Beggiato, Youssef Drissi, Werner Gillijns, Christophe Beral, Sandip Halder, Gian Lorusso, Philippe Leray

Proceedings Volume PC12751, PC127510Q (2023) https://doi.org/10.1117/12.2687822

KEYWORDS: Optical proximity correction, Photomasks, Extreme ultraviolet, Calibration, Semiconducting wafers, Scanning electron microscopy, Printing, Modeling, Machine learning, Data modeling

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SPIE Journal Paper | 19 October 2023

Applications of large field of view e-beam metrology to contour-based optical proximity correction modeling

Chih-I Wei, Seulki Kang, Sayantan Das, Masahiro Oya, Yosuke Okamoto, Kotaro Maruyama, Germain Fenger, Azat Latypov, Ir Kusnadi, Gurdaman Khaira, Yuichiro Yamazaki, Werner Gillijns, Sandip Halder, Gian Lorusso

JM3, Vol. 22, Issue 04, 041603, (October 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.4.041603

KEYWORDS: Modeling, Data modeling, Semiconducting wafers, Optical proximity correction, Contour modeling, Metrology, Calibration, Stochastic processes, Scanning electron microscopy, Performance modeling

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Proceedings Article | 28 April 2023 Presentation + Paper

Presentation + Paper

Application of resolution enhancement techniques at high NA EUV for next generation DRAM patterning

Xima Zhang, Ana-Maria Armeanu, Evgeny Malankin, Neal Lafferty, Germain Fenger, Chih-I Wei, Monica Kempsell Sears, Werner Gillijns, Darko Trivkovic, Ryoung-han Kim, Jeonghoon Lee

Proceedings Volume 12495, 124950A (2023) https://doi.org/10.1117/12.2660413

KEYWORDS: Photomasks, Extreme ultraviolet, Source mask optimization, Resolution enhancement technologies, Optical proximity correction, Lithography, Optical lithography, Capacitors, Semiconducting wafers, SRAF

Read Abstract +

Among several critical layers of DRAM (dynamic random-access memory), capacitor holes of honeycomb arrays and bit-line-periphery (BLP) with Storage Node Landing Pad (SNLP) are the most critical layers in terms of patterning difficulty level. The honeycomb array hole layer has the highest density among various hole array types, and it is a complex lithography step since this layer is key in determining the performance of the DRAM. BLP with SNLP includes hole type and bi-directional line/space (L/S) design, and industry is considering a single exposure solution, compared to a three-mask solution using ArF immersion [1]. This BLP layer of 10nm DRAM has 2 different types of pattern topologies, hole array and bi-direction line/space: it is a very challenging single exposure level. In this paper, we discuss patterning challenges that come as consequences of industry trends in DRAM cell size reduction [2,3]. To keep up with this trend and to propose a single mask solution for bit-line-periphery, storage node landing pads and aggressive cell array pitches are considered along with resolution enhancement techniques (RET) for high-NA anamorphic EUV (NA=0.55) lithography. This study uses computational lithography such as source mask optimization (SMO) to find optimal off-axis illumination and optimal placement of sub-resolution assist features (SRAF) on the mask whilst considering the manufacturing rules checks (MRC constraints) for anamorphic EUV masks. In order to achieve that, a screening Design Technology Co-optimization (DTCO) experiment is done. The purpose is to identify cell array pitches in between 24nm and 32nm which satisfy both scaling requirements and patterning fidelity, preferred orientation of layout, and mask biasing scheme for various cell arrays. Lithography metrics like common depth of focus (cDoF), exposure latitude (EL), image contrast, and image log slope (ILS) are used to decide what is optimal way to expose on wafer. For the sake of completeness of the study, mask materials are compared. Indeed, in EUV domain there is interest to use alternative mask absorbers like Ruthenium alloys as an alternative to Tantalum-based absorbers [4,5,6].

Proceedings Article | 28 April 2023 Paper

Paper

Patterning assessment using 0.33NA EUV single mask for next generation DRAM manufacturing

Jeonghoon Lee, Ana-Maria Armeanu, Sandip Halder, Van Tuong Pham, Roberto Fallica, Seonggil Heo, Kaushik Sah, Hyo Seon Suh, Victor Blanco, Werner Gillijns, Andrew Cross, Ethan Maguire, Vladislav Liubich, Evgeny Malankin, Xima Zhang, Monica Kempsell Sears, Neal Lafferty, Germain Fenger, Chih-I Wei, Ryoung Han Kim

Proceedings Volume 12495, 124950S (2023) https://doi.org/10.1117/12.2660763

KEYWORDS: Optical lithography, Extreme ultraviolet, Optical proximity correction, Design and modelling, SRAF, Semiconducting wafers, Inspection, Source mask optimization, Printing, Electronic design automation

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Proceedings Article | 28 April 2023 Presentation + Paper

Presentation + Paper

Compact modeling of stochastics and application in OPC

Werner Gillijns, Jae-uk Lee, Ryan Ryoung han Kim, Chih-I Wei, Xima Zhang, Azat Latypov, Germain Fenger, John Sturtevant

Proceedings Volume 12494, 124940J (2023) https://doi.org/10.1117/12.2658260

KEYWORDS: Optical proximity correction, Stochastic processes, Semiconducting wafers, Modeling, Simulations, Design and modelling, Extreme ultraviolet lithography, Calibration, Logic, Lithography

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Proceedings Article | 28 April 2023 Presentation + Paper

Presentation + Paper

Feasibility of logic metal scaling with 0.55NA EUV single patterning

Dongbo Xu, Ling Ee Tan, Vicky Philipsen, Werner Gillijns, Joerg Zimmermann

Proceedings Volume 12494, 124940M (2023) https://doi.org/10.1117/12.2657983

KEYWORDS: Source mask optimization, Metals, Extreme ultraviolet lithography, SRAF, Logic, Photomasks, Printing, Extreme ultraviolet

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Proceedings Article | 28 April 2023 Presentation + Paper

Presentation + Paper

EUV single patterning validation of curvilinear routing

Werner Gillijns, Dongbo Xu, Fergo Treska, Yasser Sherazi

Proceedings Volume 12494, 124940I (2023) https://doi.org/10.1117/12.2654633

KEYWORDS: Design and modelling, Extreme ultraviolet, Semiconducting wafers, Metals, Edge roughness, SRAF, Printing, Optical lithography, Scanning electron microscopy, Extreme ultraviolet lithography, Optical proximity correction

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Proceedings Article | 28 April 2023 Poster + Paper

Poster + Paper

EUV SRAFs printing modeling and verification in 2D hole array

Azat Latypov, Satya Sriram, Prakash Deep, Farruh Shahidi, Shuling Wang, Shumay Shang, Germain Fenger, Werner Gillijns, Chih-I Wei, Ling Ee Tan, Le Hong, Lianghoon Yin

Proceedings Volume 12494, 1249417 (2023) https://doi.org/10.1117/12.2658320

KEYWORDS: SRAF, Printing, Stochastic processes, Modeling, Semiconducting wafers, Scanning electron microscopy, Extreme ultraviolet, Design and modelling, Data modeling, Photomasks

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Proceedings Article | 28 April 2023 Paper

Paper

EUV single patterning of random logic via using bright field mask

Werner Gillijns, Dongbo Xu, Jae Uk Lee, Jeroen van de Kerkhove, Vicky Philipsen, Ryoung-han Kim, Ling Ee Tan

Proceedings Volume 12494, 124940X (2023) https://doi.org/10.1117/12.2658344

KEYWORDS: Source mask optimization, Reticles, Resolution enhancement technologies, Extreme ultraviolet lithography, SRAF, Logic, Semiconducting wafers, Design and modelling, Critical dimension metrology, Optical proximity correction, Printing

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SPIE Journal Paper | 25 November 2022

Extend 0.33 NA extreme ultraviolet single patterning to pitch 28-nm metal design by low-n mask

Dongbo Xu, Werner Gillijns, Ling Ee Tan, David Rio, Max Delorme, Vicky Philipsen, Ryoung-han Kim

JM3, Vol. 21, Issue 04, 043202, (November 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.4.043202

KEYWORDS: Photomasks, Design and modelling, Optical lithography, Metals, Binary data, SRAF, Critical dimension metrology, Extreme ultraviolet, Printing, Logic

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Proceedings Article | 16 September 2022 Paper

Paper

EUV SRAFs printing modeling with bright field mask

Chih-I Wei, Azat Latypov, Shuling Wang, Satya Sriram, Prakash Deep, Yunfei Deng, Ethan Maguire, Shumay Shang, Germain Fenger, Werner Gillijns

Proceedings Volume 12325, 1232506 (2022) https://doi.org/10.1117/12.2640532

KEYWORDS: SRAF, Semiconducting wafers, Stochastic processes, Data modeling, Scanning electron microscopy, Photomasks, Extreme ultraviolet, Calibration, Line width roughness

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Proceedings Article | 16 September 2022 Paper

Paper

Curvilinear EUV mask: development of innovative mask metrology

Maxence Delorme, Emily Gallagher, Adam Lyons, Mahmoud Mohsen, Tom Wallow, Werner Gillijns, Christoph Hennerkes

Proceedings Volume 12325, 123250L (2022) https://doi.org/10.1117/12.2642867

KEYWORDS: Photomasks, Optical proximity correction, Metrology, Scanning electron microscopy, Logic, Distortion, Extreme ultraviolet, Critical dimension metrology

Read Abstract +

Recent developments in multi-beam mask writers (MBMW)1 enable the manufacturing of curvilinear masks. This promises higher patterning accuracy on wafer. The increased patterning flexibility takes us into new territories for mask manufacturing accuracy, precision and Mask Rule Check (MRC). MBMW allows Optical Proximity Correction (OPC) to venture into Inverse Lithography Technology (ILT) solutions, enabling accurate curvilinear masks. New challenges are also encountered when building OPC models that target ILT masks, such as on wafer metrology and pattern coverage. This exploration will be the focus of this study, in particular the MRC and mask characterization aspects, leveraging a new curvilinear reticle available at imec. As a result of its fully curvilinear nature, conventional mask metrology – solely based on cutline CDs – is no longer entirely adequate. Therefore, a new metrology flow must be developed to assess and quantify mask errors, relying on mask SEM image contour extraction and Mask Edge Placement Error (MEPE) evaluations. Our proposed flow has three steps: -Mask CDSEM images are loaded into a software, which enables an accurate contour extraction and alignment to the original design. The output of this exercise is a design file with open contours. - The output design file is converted into polygons (i.e., defining inside/outside polygons areas) by utilizing the original design as a guide. This allows for full compatibility with the next stage. -Lastly, a highly-sampled MEPE is determined for all polygons, both from the main and assisting features. The result is then analyzed offline. Ultimately, this curvilinear mask data analysis sequence was used on several subsets of the mask metrology dataset. In order to validate the approach, we reproduced the CD based metrology provided by the mask shop. We then expanded our scope to parametric curvilinear features, to find correlators (i.e. local design properties) to the observed mask error observed (e.g., polygon local curvature or density). Finally, ILT clips were used to verify the determined correlators.

Proceedings Article | 26 May 2022 Presentation + Paper

Presentation + Paper

Design and mask optimization toward low dose EUV exposure

Dongbo Xu, Werner Gillijns, Ryoung-han Kim

Proceedings Volume 12052, 120520C (2022) https://doi.org/10.1117/12.2614268

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Source mask optimization, Semiconducting wafers, Optical proximity correction, Nanoimprint lithography

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Proceedings Article | 26 May 2022 Presentation + Paper

Presentation + Paper

Investigation of low-n mask in 0.33 NA EUV single patterning at pitch 28nm metal design

Dongbo Xu, Ling Ee Tan, Vicky Philipsen, Ryoung-Han Kim, Werner Gillijns

Proceedings Volume 12051, 120510H (2022) https://doi.org/10.1117/12.2614197

KEYWORDS: Photomasks, SRAF, Nanoimprint lithography, Metals, Extreme ultraviolet

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Proceedings Article | 26 May 2022 Poster + Paper

Poster + Paper

EUV low-n attenuated phase-shift mask on random logic via single patterning at pitch 36nm

Ling Ee Tan, Werner Gillijns, Jae Uk Lee, Dongbo Xu, Jeroen van de Kerkhove, Ryoung-Han Kim, Vicky Philipsen

Proceedings Volume 12051, 120510P (2022) https://doi.org/10.1117/12.2614000

KEYWORDS: Photomasks, Optical proximity correction, SRAF, Logic, Nanoimprint lithography, Source mask optimization, Photovoltaics, Printing, Lens design, Semiconducting wafers

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SPIE Journal Paper | 7 April 2022

Exploration of alternative mask for 0.33NA extreme ultraviolet single patterning at pitch 28-nm metal design

Dongbo Xu, Werner Gillijns, Ling Ee Tan, Vicky Philipsen, Ryoung-Han Kim

JM3, Vol. 21, Issue 02, 024401, (April 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.2.024401

KEYWORDS: Photomasks, SRAF, Optical lithography, Nanoimprint lithography, Extreme ultraviolet, Molybdenum, Binary data, Metals, Source mask optimization, Personal protective equipment

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Proceedings Article | 5 March 2022 Presentation + Paper

Presentation + Paper

Improving silicon-photonics inverse-design printability by leveraging SEM contours for advanced Optical Proximity Correction techniques

Peter Verheyen, Sebastien Lardenois, Guy Lepage, Youssef Drissi, Mahmoud Mohsen, Werner Gillijns, Maxence Delorme

Proceedings Volume 12012, 1201208 (2022) https://doi.org/10.1117/12.2609092

KEYWORDS: Optical proximity correction, Scanning electron microscopy, Semiconducting wafers, Silicon photonics, Photomasks, Metrology, Manufacturing, Silicon, Etching, Resolution enhancement technologies

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Proceedings Article | 12 October 2021 Presentation + Paper

Presentation + Paper

Impact of mask corner rounding on pitch 40 nm contact hole variability

Werner Gillijns, Emily Gallagher, Lieve van Look

Proceedings Volume 11854, 1185406 (2021) https://doi.org/10.1117/12.2601850

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Stochastic processes, Metrology, Scanning electron microscopy, Scanners, Extreme ultraviolet lithography

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Proceedings Article | 12 October 2021 Presentation + Paper

Presentation + Paper

Exploration of alternative mask for 0.33NA EUV single patterning at pitch 28nm

Vicky Philipsen, Ling Ee Tan, Dongbo Xu, Werner Gillijns, Ryoung-han Kim

Proceedings Volume 11854, 118540T (2021) https://doi.org/10.1117/12.2599054

KEYWORDS: SRAF, Photomasks, Optical lithography, Source mask optimization, Extreme ultraviolet, Logic

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Proceedings Article | 26 February 2021 Presentation + Paper

Presentation + Paper

28nm pitch single exposure patterning readiness by metal oxide resist on 0.33NA EUV lithography

D. De Simone, L. Kljucar, P. Das, R. Blanc, C. Beral, J. Severi, N. Vandenbroeck, P. Foubert, A. Charley, A. Oak, D. Xu, W. Gillijns, J. Mitard, Z. Tokei, M. van der Veen, N. Heylen, L. Teugels, Q. T. Le, F. Schleicher, P. Leray, K. Ronse, Il Hwan Kim, Insung Kim, Changmin Park, Jisun Lee, Koungmin Ryu, P. De Schepper, J. Doise, M. Kocsis

Proceedings Volume 11609, 116090Q (2021) https://doi.org/10.1117/12.2584713

KEYWORDS: Extreme ultraviolet lithography, Optical lithography, Oxides, Metals, Extreme ultraviolet, Scanners, Scanning electron microscopy, Photoresist processing, Lithography, Line edge roughness

Read Abstract +

For many years traditional 193i lithography has been extended to the next technology node by means of multi-patterning techniques. However recently such a 193i technology became challenging and expensive to push beyond the technology node for complex features that can be tackled in a simpler manner by the Extreme UltraViolet Lithography (EUVL) technology. Nowadays, EUVL is part of the high-volume manufacturing device landscape and it has reached a critical decision point where one can push further the single print on 0.33NA full field scanner or move to a EUV double patterning technology with more relaxed pitches to overcome current 0.33NA stochastic limits. In this work we have selected the 28nm pitch dense line-space (P28) as critical decision check point. We have looked at the 0.33NA EUV single print because it is more cost effective than 0.33NA EUV double patterning. In addition, we have conducted a process feasibility study as P28 in single print is close to the resolution limit of the 0.33NA EUV full field scanner. We present the process results on 28nm dense line-space patterning by using Inpria’s metal-oxide (MOx) EUV resist. We discuss the lithographic and etching process challenges by looking at resist sensitivity, unbiased line edge roughness (LER) and nano patterning failures after etching (AE), using broad band plasma (BBP) and e-beam (EB) defectivity inspection tools. To get further understanding on the P28 single patterning capability we have integrated the developed EUV MOx process in a relevant iN7 technology test vehicle by developing a full P28 metallization module with ruthenium. In such a way we were able to carry on electrical tests on metallized serpentine, fork-fork and tip-to-tip structures designed with a purpose of enabling further learning on pattern failures through electrical measurements. Finally, we conclude by showing the readiness of P28 single exposure using Inpria’s MOx process on a 0.33NA EUV full field scanner.

Proceedings Article | 22 February 2021 Poster + Presentation + Paper

Poster + Presentation + Paper

NXE:3400 OPC process monitoring: model validity vs process variability

Dongbo Xu, David Rio, Werner Gillijns, Max Delorme, Christina Baerts

Proceedings Volume 11609, 116091N (2021) https://doi.org/10.1117/12.2583870

KEYWORDS: Process modeling, OLE for process control, Optical proximity correction, SRAF, Semiconducting wafers, Scanners, Critical dimension metrology, Scanning electron microscopy, Process control, Finite element methods

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Proceedings Article | 22 February 2021 Presentation + Paper

Presentation + Paper

EUV single patterning exploration for pitch 28 nm

Dongbo Xu, Werner Gillijns, Ling Ee Tan, Apoorva Oak, Ryoung-han Kim, Youssef Drissi

Proceedings Volume 11614, 116140Q (2021) https://doi.org/10.1117/12.2584730

KEYWORDS: Optical proximity correction, Semiconducting wafers, Metals, Extreme ultraviolet, SRAF, Lithography

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Proceedings Article | 22 February 2021 Presentation + Paper

Presentation + Paper

Better prediction on patterning failure mode with hotspot aware OPC modeling

Yunfei Deng, Gurdaman Khaira, Ir Kusnadi, Germain Fenger, Seulki Kang, Yosuke Okamoto, Kotaro Maruyama, Yuichiro Yamazaki, Sayantan Das, Sandip Halder, Werner Gillijns, Gian Lorusso, Chih-I Wei, Stewart Wu

Proceedings Volume 11611, 1161112 (2021) https://doi.org/10.1117/12.2583837

KEYWORDS: Optical proximity correction, Electron beam lithography, 3D modeling, Inspection, Calibration, Lithography, Data modeling, Time metrology, Semiconducting wafers, Scanning electron microscopy

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Proceedings Article | 20 September 2020 Presentation

Presentation

Influence and control of CD on defectivity for EUV Pitch 32 Line-Space

Christophe Béral, Anne-Laure Charley, Philippe Leray, Frederic Lazzarino, Romuald Blanc, Poulomi Das, Ataklti Weldeslassie, Amir-Hossein Tamaddon, Werner Gillijns

Proceedings Volume 11517, 115170N (2020) https://doi.org/10.1117/12.2572865

KEYWORDS: Extreme ultraviolet, Critical dimension metrology, Reticles, Extreme ultraviolet lithography, Scanners, Etching

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Proceedings Article | 25 March 2020 Presentation

Presentation

Concurrent design rule, OPC and process optimization in EUV Lithography (Conference Presentation)

Werner Gillijns, Ling Ee Tan, Jae Uk Lee, Ryoung-Han Kim, Dongbo Xu

Proceedings Volume 11328, 1132804 (2020) https://doi.org/10.1117/12.2553212

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Proceedings Article | 20 March 2020 Presentation + Paper

Presentation + Paper

Realizing more accurate OPC models by utilizing SEM contours

Yosuke Okamoto, Masahiro Oya, Kotaro Maruyama, Yuichiro Yamazaki, Chih-I Wei, Rajiv Sejpal, Yunfei Deng, Ir Kusnadi, Germain Fenger, Sayantan Das, Sandip Halder, Werner Gillijns

Proceedings Volume 11325, 1132524 (2020) https://doi.org/10.1117/12.2554527

KEYWORDS: Scanning electron microscopy, Data modeling, Calibration, Optical proximity correction, Semiconducting wafers, Metrology, Image processing, 3D modeling, Photomasks, Image quality

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Proceedings Article | 26 September 2019 Presentation + Paper

Presentation + Paper

A study of curvilinear routing in IN5 standard cells: challenges and opportunities (Poster Presentation)

Amit Dounde, Syed Muhammad Yasser Sherazi, Ryoung-Han Kim, Darko Trivkovic, Werner Gillijns, Youssef Drissi

Proceedings Volume 11148, 111481C (2019) https://doi.org/10.1117/12.2536899

KEYWORDS: Vestigial sideband modulation, Optical proximity correction, Standards development, Nanotechnology, Nanofabrication, Two photon polymerization, Adaptive optics, Electronic design automation, Metals, Mask making

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With the advent of Multi-beam mask writers, curvilinear shapes are being realized with comparable metrics to Manhattan shapes when it comes to write times which has been the main issue with conventional VSB mask writers. Techniques like PLDC also enhance Multibeam writing of complex curvilinear patterns. In the past Standard Cell (SDC) design was done with a gear ratio (polypitch/m1pitch) of 1:1. This inadvertently results in congestion on lower layers namely M1 as we try to push the design density. This can be improved by going to a gear ratio of 2/3 by which we derive additional M1 tracks (3 M1 tracks for every 2 poly) but the benefit derived out of a 2/3 gear ratio cell somewhat gets negated with the need for M2 in standard cells where MINT layer doesn’t fully cover M1. To resolve the problem with higher M2 usage in standard cells we can introduce 1.5D or curvilinear routing to make the final/minor routing connections. Here we try to present a study of different challenges and opportunities that arises as a result of introducing curvilinear routing in Standard cells (SDC). In IN5 technology node when we go for a gear ratio (CPP/M1Pitch) of 2/3 we observe that for every standard cell we will need two variants of the cell. These two variants have M1 which are interleaved and shifted. We can live with only one variant of the cell but this inadvertently leaves gaps in between standard cells as the M1 grids will not align when they are abutted. Further study of the impact of the need of two variants reveals that in some standard cells (~9% in IN5) we end up with using M2 for completing the connections. This has many drawbacks (extra routing resources, congestion on M2, increase in area and reduced performance) which negates the benefit derived with 2/3 gear ratio. To fix this problem we have two options. One is to use 1.5D routing and the other to use curvilinear routing. With this approach all the benefits of 2/3 gear ratio can be preserved (improved routing density, area and performance) without the need for M2. A design implementation of the same in IN5 AO22D2 standard cell with CPP of 45nm and M1 pitch of 30nm has been done and the M2 routing (with default approach) has been eliminated. Although this approach has numerous benefits and extended applications (in signal routing) it does present significant challenges when it comes to EDA tools, verification, mask and OPC. We are in the process of evaluating different test cases for design, mask and OPC challenges with curvilinear routing in IN5 SDC. On the design front the challenges include library characterization, PPA and runtime analysis, RC extraction and design verification. On the mask and OPC front some of the challenges include regular versus ILT OPC and their process window comparison, understand the SRAF’s required, mask data volume and MRC. A comprehensive understanding of the challenges and resolution of the same will entail a new scaling paradigm for standard cell designs and also enhance signal routing which in turn has numerous benefits when it comes to PPA.

Proceedings Article | 26 September 2019 Paper

Paper

Exploring alternative EUV mask absorber for iN5 self-aligned block and contact layers

Rajiv Sejpal, Vicky Philipsen, Ana Armeanu, Chih-I Wei, Neal Lafferty, Germain Fenger, Eric Hendrickx, Werner Gillijns

Proceedings Volume 11148, 111481B (2019) https://doi.org/10.1117/12.2536892

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Source mask optimization, Nanoimprint lithography, SRAF, Optical proximity correction, Phase shifting, Logic

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Proceedings Article | 21 March 2019 Paper

Paper

SALELE process from theory to fabrication

Rehab Kotb, Germain Fenger, James Word, Jae Uk Lee, Ryan Ryoung han Kim , Rajiv Naresh Sejpal, Youssef Drissi, Ahmed Hamed-Fatehy, Werner Gillijns

Proceedings Volume 10962, 109620V (2019) https://doi.org/10.1117/12.2517051

KEYWORDS: Manufacturing, Optical proximity correction, Extreme ultraviolet, Metals, Photomasks, Visualization, Scanning electron microscopy, Printing, Metrology, Optical lithography

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Proceedings Article | 2 January 2019 Presentation + Paper

Presentation + Paper

Enabling enhanced EUV lithographic performance using advanced SMO, OPC, and RET

Germain Fenger, Ana Armeanu, Vicky Philipsen, Fan Jiang, Neal Lafferty, Eric Hendrickx, John Sturtevant, Werner Gillijns

Proceedings Volume 10809, 108090G (2019) https://doi.org/10.1117/12.2502809

KEYWORDS: Photomasks, Extreme ultraviolet, Source mask optimization, Resolution enhancement technologies, Tantalum, SRAF, Lithography, Logic, Image enhancement, Image processing

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The current industry standard tantalum-based mask absorber (60 nm TaBN) gives strong 3D electromagnetic field (EMF) effects at wafer level, such as shadowing and pitch-dependent best focus shifts. A thinner mask absorber with higher EUV extinction coefficient or a phase shifting mask can mitigate 3D EMF effects [1]. The alternative mask absorber materials would enable further downscaling to foundry 5nm node using state-of-the-art EUV scanners (with 0.33 numerical aperture “NA”) and facilitate future high NA imaging using single exposure. Here we evaluate insertion options on the patterning roadmap for alternative EUV mask absorbers, including high-k absorbers and attenuated phase shifting masks (attPSM) [1-2]. All studies are using relevant designs from foundry N5 logic node. Two alternative mask candidates are compared with the standard TaBN mask. We bring theoretical proof of concept that alternative mask absorber materials generate significant imaging gain in terms of established success criteria. On a set of predefined types of clips (with variations of 1D/2D, horizontal/vertical, dense/isolated patterns), we seek for higher depth of focus (DoF), higher image log slope (ILS), high illumination efficiency (ideally it would be equal to 1), lower pattern shift through focus (i.e., lower tele-centricity errors), lower mask error enhancement factor (MEEF). Source mask optimization (SMO) on N5 logic clip shows a more balanced source and larger common process window for high-k absorber over Ta-based absorber. Using the optical proximity correction (OPC) engine with high-k mask absorber, shows significant gain on overlapping process window (PW), process variation (PV) band, and less line end shortening. Applying advanced Resolution Enhancement Techniques (RET), sub-resolution assist features (SRAFs) on N5 designs demonstrated an improved process in terms of common depth of focus (cDoF), and image shift through focus. It was also observed that the process not using SRAFs with the high-k absorber had superior process window and image shift compared to the Ta-based case with SRAFs. Therefore, adoption of such high-k absorbers could potentially postpone the need for SRAFs.

Proceedings Article | 3 October 2018 Presentation + Paper

Presentation + Paper

EUV pupil optimization for 32nm pitch logic structures

D. Rio, V. Blanco, J.-H. Franke, M. Dusa, E. De Poortere, S. Biesemans, K. Nafus, W. Gillijns, E. Hendrickx, P. Van Adrichem, K. Lyakhova, C. Spence

Proceedings Volume 10809, 108090N (2018) https://doi.org/10.1117/12.2503321

KEYWORDS: Source mask optimization, Semiconducting wafers, Scanners, Logic, Extreme ultraviolet lithography, Reticles, Extreme ultraviolet

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Proceedings Article | 21 March 2018 Presentation + Paper

Presentation + Paper

Single exposure EUV of 32nm pitch logic structures: patterning performance on BF and DF masks

V. Blanco Carballo, J. Bekaert, M. Mao, R. H. Kim, W. Gillijns, G. McIntyre, S. Biesemans, K. Nafus, M. Dusa, E. De Poortere, G. Schiffelers, M. Kupers, J. H. Franke, E. Hendrickx, Y. Drissi, D. Rio, M. Demand, L. E. Tan, J. Jia, S. Hsu

Proceedings Volume 10583, 105830L (2018) https://doi.org/10.1117/12.2299639

KEYWORDS: Etching, Tin, SRAF, Optical lithography, Logic, Extreme ultraviolet, Photomasks, Stochastic processes, Scanning electron microscopy, Photoresist processing

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Proceedings Article | 20 March 2018 Presentation + Paper

Presentation + Paper

IMEC N7, N5 and beyond: DTCO, STCO and EUV insertion strategy to maintain affordable scaling trend

Ryoung-han Kim, Yasser Sherazi, Peter Debacker, Praveen Raghavan, Julien Ryckaert, Arindam Malik, Diederik Verkest, Jae Uk Lee, Werner Gillijns, Ling Ee Tan, Victor Blanco, Kurt Ronse, Greg McIntyre

Proceedings Volume 10588, 105880N (2018) https://doi.org/10.1117/12.2299335

KEYWORDS: Optical lithography, Extreme ultraviolet, Metals, Logic, Manufacturing, Lithography, Back end of line, Extreme ultraviolet lithography, New and emerging technologies

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Proceedings Article | 16 October 2017 Presentation

Presentation

EUV single patterning for logic metal layers: achievement and challenge (Conference Presentation)

Victor Blanco Carballo, Stephane Larivière, Rudi De Ruyter, Morin Dehan, Gregory McIntyre, Ryoung-Han Kim, Werner Gillijns, Ling Ee Tan, Youssef Drissi, Jae Uk Lee, Darko Trivkovic

Proceedings Volume 10450, 1045004 (2017) https://doi.org/10.1117/12.2281738

KEYWORDS: Photomasks, Extreme ultraviolet, Optical lithography, Logic, Optical proximity correction, SRAF, Data conversion, Metals, Manufacturing, Semiconducting wafers

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Proceedings Article | 28 April 2017 Presentation

Presentation

CD-SEM metrology and OPC modeling for 2D patterning in advanced technology nodes (Conference Presentation)

Thomas Wallow, Chen Zhang, Anita Fumar-Pici, Jun Chen, Bart Laenens, Christopher Spence, David Rio, Paul van Adrichem, Harm Dillen, Jing Wang, Peng-Cheng Yang, Werner Gillijns, Patrick Jaenen, Frieda van Roey, Jeroen van de Kerkhove, Sergey Babin

Proceedings Volume 10145, 101451Q (2017) https://doi.org/10.1117/12.2260443

KEYWORDS: Metrology, Optical proximity correction, Data modeling, Optical lithography, Signal to noise ratio, OLE for process control, Instrument modeling, Image analysis, Calibration, Metals

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In the course of assessing OPC compact modeling capabilities and future requirements, we chose to investigate the interface between CD-SEM metrology methods and OPC modeling in some detail. Two linked observations motivated our study: 1) OPC modeling is, in principle, agnostic of metrology methods and best practice implementation. 2) Metrology teams across the industry use a wide variety of equipment, hardware settings, and image/data analysis methods to generate the large volumes of CD-SEM measurement data that are required for OPC in advanced technology nodes. Initial analyses led to the conclusion that many independent best practice metrology choices based on systematic study as well as accumulated institutional knowledge and experience can be reasonably made. Furthermore, these choices can result in substantial variations in measurement of otherwise identical model calibration and verification patterns. We will describe several experimental 2D test cases (i.e., metal, via/cut layers) that examine how systematic changes in metrology practice impact both the metrology data itself and the resulting full chip compact model behavior. Assessment of specific methodology choices will include: • CD-SEM hardware configurations and settings: these may range from SEM beam conditions (voltage, current, etc.,) to magnification, to frame integration optimizations that balance signal-to-noise vs. resist damage. • Image and measurement optimization: these may include choice of smoothing filters for noise suppression, threshold settings, etc. • Pattern measurement methodologies: these may include sampling strategies, CD- and contour- based approaches, and various strategies to optimize the measurement of complex 2D shapes. In addition, we will present conceptual frameworks and experimental methods that allow practitioners of OPC metrology to assess impacts of metrology best practice choices on model behavior. Finally, we will also assess requirements posed by node scaling on OPC model accuracy, and evaluate potential consequences for CD-SEM metrology capabilities and practices.

Proceedings Article | 26 April 2017 Presentation + Paper

Presentation + Paper

Design and pitch scaling for affordable node transition and EUV insertion scenario

Ryoung-han Kim, Julien Ryckaert, Praveen Raghavan, Yasser Sherazi, Darko Trivkovic, Werner Gillijns, Ling Ee Tan, Youssef Drissi, Victor Blanco, Joost Bekaert, Ming Mao, Stephane Larivière, Greg McIntyre, Peter Debacker

Proceedings Volume 10148, 101480V (2017) https://doi.org/10.1117/12.2257885

KEYWORDS: Photomasks, Logic, Etching, SRAF, Extreme ultraviolet, Optical lithography, Metals, Computational lithography, Optical proximity correction, Semiconductor manufacturing

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Proceedings Article | 27 March 2017 Presentation + Paper

Presentation + Paper

Compact 2D OPC modeling of a metal oxide EUV resist for a 7nm node BEOL layer

Thomas Wallow, Sook Lee, David Rio, Adam Lyons, Michael Kocsis, Peter de Schepper, Michael Greer, Jason Stowers, Werner Gillijns, Danilo De Simone, Joost Bekaert, Maxence Delorme, Anita Fumar-Pici

Proceedings Volume 10143, 101431E (2017) https://doi.org/10.1117/12.2260441

KEYWORDS: Optical proximity correction, Metals, Oxides, Back end of line, Extreme ultraviolet, Photomasks, Etching, Resistance, Photoresist materials, Extreme ultraviolet lithography, Calibration, Data modeling, Semiconducting wafers, Metrology, Finite element methods

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Proceedings Article | 24 March 2017 Presentation + Paper

Presentation + Paper

Single exposure EUV patterning of BEOL metal layers on the IMEC iN7 platform

S. Paolillo, A. Mallik, V. Blanco Carballo, J. Bekaert, M. Mao, B. Kutrzeba Kotowska, S. Larivière, I. Ciofi, R. H. Kim, E. Hendrickx, E. Gallagher, L. E. Tan, W. Gillijns, D. Trivkovic, S. Halder, M. Gallagher, G. McIntyre, F. Lazzarino, M. Dusa, P. Rusu, F. Wittebrood, R. Baert, P. Leray, D. Wan, Y. Sherazi, T. Fliervoet, T. Hollink

Proceedings Volume 10143, 1014318 (2017) https://doi.org/10.1117/12.2258005

KEYWORDS: Metals, Extreme ultraviolet lithography, Optical lithography, Back end of line, Extreme ultraviolet, Etching, Semiconducting wafers, Logic, Critical dimension metrology, Tin

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Proceedings Article | 24 March 2017 Presentation + Paper

Presentation + Paper

Reticle enhancement techniques toward iN7 metal2

D. Trivkovic, W. Gillijns, L. E. Tan, V. Blanco, R. H. Kim, G. McIntyre, Y. Drissi, E. Gallagher

Proceedings Volume 10143, 1014314 (2017) https://doi.org/10.1117/12.2258003

KEYWORDS: Metals, Extreme ultraviolet, Optical proximity correction, Extreme ultraviolet lithography, Reticles, Optical lithography, Calibration, Source mask optimization, Photomasks, SRAF, Semiconducting wafers

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Proceedings Article | 25 March 2016 Paper

Paper

Metal oxide EUV photoresist performance for N7 relevant patterns and processes

Jason Stowers, Jeremy Anderson, Brian Cardineau, Benjamin Clark, Peter De Schepper, Joseph Edson, Michael Greer, Kai Jiang, Michael Kocsis, Stephen Meyers, Alan Telecky, Andrew Grenville, Danilo De Simone, Werner Gillijns, Geert Vandenberghe

Proceedings Volume 9779, 977904 (2016) https://doi.org/10.1117/12.2219527

KEYWORDS: Extreme ultraviolet lithography, Photoresist materials, Metals, Oxides, Optical lithography, Absorbance, Etching, Stochastic processes, Photons, Line width roughness, Photoresist processing, Chemical elements

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SPIE Journal Paper | 19 February 2016

^{Rigorous assessment of patterning solution of metal layer in 7 nm technology node}

Weimin Gao, Ivan Ciofi, Yves Saad, Philippe Matagne, Michael Bachmann, Werner Gillijns, Kevin Lucas, Wolfgang Demmerle, Thomas Schmöller

JM3, Vol. 15, Issue 01, 013505, (February 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.1.013505

KEYWORDS: Optical lithography, Etching, Extreme ultraviolet lithography, Metals, Lithography, Critical dimension metrology, 3D modeling, Stochastic processes, Cadmium, Extreme ultraviolet

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Proceedings Article | 18 March 2015 Paper

Paper

Impact of a SADP flow on the design and process for N10/N7 metal layers

S. M. Y. Sherazi, W. Gillijns, D. Trivkovic, B. Vandewalle, P. Raghavan, J. Ryckaert, D. Verkest, K. Ronse, G. McIntyre, V. Gerousis, B. Chava, K. Mercha

Proceedings Volume 9427, 942709 (2015) https://doi.org/10.1117/12.2085923

KEYWORDS: Metals, Photomasks, Semiconducting wafers, Lithography, Optical lithography, Standards development, Capacitance, Optical proximity correction, Scanning electron microscopy, Manufacturing

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Proceedings Article | 18 March 2015 Paper

Paper

Patterning process exploration of metal 1 layer in 7nm node with 3D patterning flow simulations

Weimin Gao, Yves Saad, Kevin Lucas, Wolfgang Demmerle, Ivan Ciofi, Philippe Matagne, Werner Gillijns, Michael Bachmann, Mohamed Oulmane, Thomas Schmoeller

Proceedings Volume 9426, 942606 (2015) https://doi.org/10.1117/12.2085328

KEYWORDS: Etching, Optical lithography, Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, 3D modeling, Metals, Stochastic processes, Cadmium, 3D vision

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Proceedings Article | 18 March 2015 Paper

Paper

Standard cell design in N7: EUV vs. immersion

Bharani Chava, Mircea Dusa, Peter Debacker, Praveen Raghavan, Werner Gillijns, David Rio, Ahmad Elsaid, Julien Ryckaert, Yasser Sherazi, Abdelkarim Mercha, Diederik Verkest, Darko Trivkovic

Proceedings Volume 9427, 94270E (2015) https://doi.org/10.1117/12.2085739

KEYWORDS: Extreme ultraviolet, Photovoltaics, Deep ultraviolet, Standards development, Extreme ultraviolet lithography, Lithography, Photomasks, Source mask optimization, Scanners, Optical lithography

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Proceedings Article | 1 October 2013 Paper

Paper

Imaging challenges in 20nm and 14nm logic nodes: hot spots performance in Metal1 layer

D. Rio, H. Liu, W. Gillijns, J. Wang, P. Wong, D. Van Den Heuvel, V. Wiaux, P. Nikolsky, J. Finders, V. Timoshkov

Proceedings Volume 8886, 88860N (2013) https://doi.org/10.1117/12.2030968

KEYWORDS: Reticles, Critical dimension metrology, Semiconducting wafers, Logic, Tolerancing, Double patterning technology, Standards development, Metals, Scanners

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Proceedings Article | 12 April 2013 Paper

Paper

OPC resist model separability validation after SMO source change

David Rio, Stephen Hsu, Mu Feng, Darko Trivkovic, Qiang Zhang, Hua-yu Liu, Werner Gillijns, Jeroen Van de Kerkhove, Peter De Bisschop

Proceedings Volume 8683, 86831B (2013) https://doi.org/10.1117/12.2011879

KEYWORDS: Data modeling, Optical proximity correction, Calibration, Source mask optimization, Finite element methods, Photomasks, Semiconducting wafers, Logic, Electroluminescence, Lithography

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Proceedings Article | 29 April 2010 Paper

Paper

Asymmetric second harmonic generation in chiral optical metamaterials

T. Verbiest, V. Moshchalkov, V. Valev, W. Gillijns, A. Silhanek, O. Aktsipetrov

Proceedings Volume 7711, 77111S (2010) https://doi.org/10.1117/12.853657

KEYWORDS: Second-harmonic generation, Metamaterials, Nanostructures, Harmonic generation, Magnetism, Gold, Mirrors, Interfaces, Polarization, Optical metamaterials

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Showing 5 of 48 publications

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