Dr. Wolfgang Hoppe Profile

Dr. Wolfgang Hoppe

at Synopsys GmbH

SPIE Involvement:

Author

Publications (21)

Proceedings Article | 10 April 2024 Presentation + Paper

Presentation + Paper

High accuracy OPC electromagnetic full-chip modeling for curvilinear mask OPC and ILT

Enas Sakr, Zac Levinson, Rob DeLancey, C. Jay Lee, Jinguang Li, Ryan Chen, Robert Iwanow, Delian Yang, Wolfgang Hoppe, Folarin Latinwo, Kevin Lucas, Peng Liu

Proceedings Volume 12954, 129540N (2024) https://doi.org/10.1117/12.3013089

KEYWORDS: Optical proximity correction, Electromagnetism, Semiconducting wafers, Extreme ultraviolet, Cadmium, 3D mask effects, Modeling, Lithography, Computational lithography, Ranging

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Proceedings Article | 10 April 2024 Presentation + Paper

Presentation + Paper

Full-field correction for stitched double exposure high-NA EUVL processes

Zachary Levinson, Linghui Wu, Wolfgang Hoppe

Proceedings Volume 12954, 129540V (2024) https://doi.org/10.1117/12.3012806

KEYWORDS: Optical proximity correction, Design, Reticles, Image processing, Reflectivity, Extreme ultraviolet lithography, Scanners, Semiconducting wafers, Printing, Optical simulations

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Proceedings Article | 28 April 2023 Presentation + Paper

Presentation + Paper

High accuracy OPC modeling for new EUV low-K1 mask technology options

Enas Sakr, Rob DeLancey, Wolfgang Hoppe, Zac Levinson, Robert Iwanow, Ryan Chen, Delian Yang, Kevin Lucas

Proceedings Volume 12495, 124950P (2023) https://doi.org/10.1117/12.2658720

KEYWORDS: Extreme ultraviolet, Optical proximity correction, Multilayers, Optical lithography, Modeling, 3D mask effects

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EUV lithography has been ramped to successful volume manufacturing through a combination of improvements in process technology, layout design and device interactions, and also optimization of the overall product integration to reduce undesirable interactions. Because EUV has additional sources of systematic and stochastic variation that did not exist in DUV lithography, it is now even more important to have accurate predictive capability to test and understand the design and lithography process interactions. EUV-specific physical behavior such as shadowing, flare, mask topography (i.e., Mask3D) effects, mask stack reflectivity, mask absorber behavior and other effects are key differences in how EUV forms an image on the mask and subsequently on the wafer. The reflective mask substrate and EUV-specific mask absorber stack are therefore highly important technologies to optimize as the industry pushes both low NA (0.33NA) and high NA (0.55NA) technologies to cover the patterning requirements of upcoming 3nm and below technology nodes. Recently there have been substantial industry interest in optimizing EUV mask stacks to further enhance imaging behavior and achieve better pattern resolution, increase process window, lower stochastic defectivity and optimize flare. Several different options have been proposed for these new EUV mask stacks for lower K1 EUV patterning. All of these new options require excellent simulation accuracy in OPC, SrAF placement, OPC verification and ILT mask synthesis steps in order to realize the benefits of the new mask stacks. In this paper we will focus on analyzing and improving the accurate prediction of a range of new EUV mask stack options for full-chip OPC/ILT compatible compact models. We will show for advanced mask designs the accuracy requirements and capability of leading-edge compact models. The accuracy requirements and capability will be referenced to fully rigorous electromagnetic solver (e.g., Mask3D) results to ensure industry needs are met. We will also explore the mask stack options to highlight the imaging benefits for different material thickness, refractive index (n) and extinction coefficient (k) on important mask pattern feature and layer types.

Proceedings Article | 28 April 2023 Presentation + Paper

Presentation + Paper

Evaluation of field stitching optimization for robust manufacturing with high-NA EUVL

Zachary Levinson, Thuc Dam, Paul Pfaeffli, C. Jay Lee, Wolfgang Hoppe, Ulrich Klostermann, Kevin Lucas

Proceedings Volume 12495, 124950B (2023) https://doi.org/10.1117/12.2659721

KEYWORDS: Reticles, Etching, Tolerancing, Extreme ultraviolet lithography, Simulations, Mirrors, Scanners, Manufacturing, Semiconducting wafers, Metals

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Proceedings Article | 28 April 2023 Presentation + Paper

Presentation + Paper

Electrical analysis of a stochastically simulated 2 nm node electrical test structure

Lawrence Melvin, Wolfgang Demmerle, Joachim Siebert, Phil Stopford, Sergey Zavadskiy, Renato Hentschke, Krishna Ramkumar, Sylvain Berthiaume, Yudhishthir Kandel, Wolfgang Hoppe, Ulrich Klostermann, Zachary Levinson, Hans-Jürgen Stock, Ulrich Welling

Proceedings Volume 12495, 124950W (2023) https://doi.org/10.1117/12.2658780

KEYWORDS: Stochastic processes, Resistance, Simulations, Overlay metrology, Optical lithography, Lithography, Optical proximity correction, Ruthenium, Etching

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Proceedings Article | 22 February 2021 Presentation + Paper

Presentation + Paper

Contour-based model calibration to a minimum number of patterns

Bernd Küchler, Francois Weisbuch, Wolfgang Hoppe, Jirka Schatz, Martin Bohn, Ulrich Klostermann

Proceedings Volume 11613, 116130G (2021) https://doi.org/10.1117/12.2584714

KEYWORDS: Calibration, Data modeling, Resolution enhancement technologies, Process modeling, Scanning electron microscopy, Data acquisition, Optical lithography, Metrology, Lithography, Computer simulations

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Proceedings Article | 23 March 2020 Presentation + Paper

Presentation + Paper

Rigorous simulation of implant resist on topographic wafer

Jirka Schatz, Bernd Küchler, Wolfgang Hoppe, Dimitrios Tsamados

Proceedings Volume 11327, 113270I (2020) https://doi.org/10.1117/12.2552102

KEYWORDS: Semiconducting wafers, Silicon, Etching, Oxides, Ions, Photomasks, Optical proximity correction, Lithography, Process modeling

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Proceedings Article | 5 April 2019 Presentation + Paper

Presentation + Paper

EUV mask synthesis with rigorous ILT for process window improvement

Kyle Braam, Kosta Selinidis, Wolfgang Hoppe, Hongyuan Cai, Guangming Xiao

Proceedings Volume 10962, 109620P (2019) https://doi.org/10.1117/12.2515156

KEYWORDS: Extreme ultraviolet, Photomasks, Stochastic processes, Lithography, Extreme ultraviolet lithography, 3D modeling, Optical lithography, Manufacturing, EUV optics, Electromagnetism

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Proceedings Article | 4 April 2019 Paper

Paper

EUV computational lithography using accelerated topographic mask simulation

Vitaly Domnenko, Bernd Küchler, Wolfgang Hoppe, Jürgen Preuninger, Ulrich Klostermann, Wolfgang Demmerle, Martin Bohn, Dietmar Krüger, Ryoung Ryoung Han Kim, Ling Ee Tan

Proceedings Volume 10962, 109620O (2019) https://doi.org/10.1117/12.2515668

KEYWORDS: Photomasks, Extreme ultraviolet, Lithography, Computational lithography, 3D modeling, Computer simulations, Optical proximity correction, Performance modeling, Photoresist processing, Resolution enhancement technologies

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Proceedings Article | 20 March 2018 Paper

Paper

Rigorous ILT optimization for advanced patterning and design-process co-optimization

Kosta Selinidis, Bernd Kuechler, Howard Cai, Kyle Braam, Wolfgang Hoppe, Vitaly Domnenko, Amyn Poonawala, Guangming Xiao

Proceedings Volume 10587, 105870M (2018) https://doi.org/10.1117/12.2299375

KEYWORDS: Photomasks, Lithography, Optical lithography, 3D modeling, Optical proximity correction, Calibration, Photoresist processing, Manufacturing, Computer simulations, Source mask optimization

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Proceedings Article | 19 March 2018 Presentation + Paper

Presentation + Paper

Double patterning at NA 0.33 versus high-NA single exposure in EUV lithography: an imaging comparison

Weimin Gao, Vincent Wiaux, Wolfgang Hoppe, Vicky Philipsen, Lawrence Melvin, Eric Hendrickx, Kevin Lucas, Ryoung-han Kim

Proceedings Volume 10583, 105830O (2018) https://doi.org/10.1117/12.2297677

KEYWORDS: Photomasks, Optical proximity correction, Double patterning technology, Lithography, Extreme ultraviolet lithography, Image processing

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Proceedings Article | 24 March 2017 Presentation + Paper

Presentation + Paper

Resist 3D aware mask solution with ILT for hotspot repair

Kosta Selinidis, Wolfgang Hoppe, Thomas Schmoeller, Thuc Dam, Kevin Hooker, Guangming Xiao

Proceedings Volume 10147, 101470Q (2017) https://doi.org/10.1117/12.2257962

KEYWORDS: 3D modeling, Optical proximity correction, Optical lithography, Data modeling, Computational lithography, Optimization (mathematics), Photoresist processing, Source mask optimization, Scanning electron microscopy

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Proceedings Article | 12 April 2013 Paper

Paper

3D resist profile modeling for OPC applications

Yongfa Fan, Kar Kit Koh, Qing Yang, Wolfgang Hoppe, Bernd Kuechler, Puvan Perampalam, Makoto Miyagi, Lena Zavyalova, Thomas Schmoeller

Proceedings Volume 8683, 868318 (2013) https://doi.org/10.1117/12.2011852

KEYWORDS: 3D modeling, Data modeling, Etching, Optical proximity correction, Calibration, Lithography, Scanning electron microscopy, 3D image processing, Semiconducting wafers, Statistical modeling

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Proceedings Article | 27 May 2010 Paper

Paper

Practical resist model calibration for e-beam direct write processes

Martin Schulz, Hans-Jürgen Stock, Ulrich Klostermann, Wolfgang Hoppe, Lars Bomholt, Philipp Jaschinsky, Kang-Hoon Choi, Manuela Gutsch, Holger Sailer, Stephan Martens

Proceedings Volume 7748, 774818 (2010) https://doi.org/10.1117/12.866695

KEYWORDS: Calibration, Monte Carlo methods, Photoresist processing, Electron beam lithography, Data modeling, Process modeling, Scanning electron microscopy, Computer simulations, Scattering, Chemically amplified resists

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Proceedings Article | 23 September 2009 Paper

Paper

Predictive modeling for EBPC in EBDW

Rainer Zimmermann, Martin Schulz, Wolfgang Hoppe, Hans-Jürgen Stock, Wolfgang Demmerle, Alex Zepka, Artak Isoyan, Lars Bomholt, Serdar Manakli, Laurent Pain

Proceedings Volume 7488, 74883J (2009) https://doi.org/10.1117/12.833482

KEYWORDS: Data modeling, 3D modeling, Electron beam direct write lithography, Point spread functions, Critical dimension metrology, Model-based design, Geometrical optics, Cadmium, Error analysis, Virtual reality

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Proceedings Article | 20 October 2006 Paper

Paper

Beyond rule-based physical verification

Wolfgang Hoppe, Thomas Roessler, J. Andres Torres

Proceedings Volume 6349, 63494X (2006) https://doi.org/10.1117/12.686604

KEYWORDS: Computer aided design, Manufacturing, Lithography, Visualization, Optical proximity correction, Metals, Distance measurement, Photomasks, Optics manufacturing, Silicon

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Proceedings Article | 20 March 2006 Paper

Paper

Benchmark of numerical versus analytical proximity curve calculations

Roderick Köhle, Christof Bodendorf, Wolfgang Hoppe

Proceedings Volume 6154, 61542Q (2006) https://doi.org/10.1117/12.656884

KEYWORDS: Solids, System on a chip, Computer simulations, Error analysis, Image resolution, Optical proximity correction, Optical simulations, Apodization, Image analysis, Diffraction

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Proceedings Article | 17 December 2003 Paper

Paper

Toward large-area simulation of e-beam lithography

Martin Bohn, Ulrich Hofmann, Wolfgang Hoppe, Christopher Progler, Michael Ryzhoukhin

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.520812

KEYWORDS: Optical proximity correction, Electron beam lithography, Monte Carlo methods, Photomasks, Mathematical modeling, Mask making, Lithography, Computer simulations, Optical lithography, Algorithm development

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Proceedings Article | 30 July 2002 Paper

Paper

New methods to calibrate simulation parameters for chemically amplified resists

Bernd Tollkuehn, Andreas Erdmann, Niko Kivel, Stewart Robertson, Doris Kang, Steven Hansen, Anita Fumar-Pici, Tsann-Bim Chiou, Wolfgang Hoppe

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474497

KEYWORDS: Diffusion, Performance modeling, Data modeling, Calibration, Chemically amplified resists, Optimization (mathematics), Device simulation, Optical lithography, Monochromatic aberrations, Lithography

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Proceedings Article | 24 August 2001 Paper

Paper

Improved notch model for resist dissolution in lithography simulation

Stewart Robertson, Edward Pavelchek, Wolfgang Hoppe, Robert Wildfeuer

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436815

KEYWORDS: Lithography, Standards development, Data modeling, Promethium, Photoresist materials, Photoresist processing, Diffusion, Inspection, Process modeling, Picture Archiving and Communication System

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Proceedings Article | 26 April 2001 Paper

Paper

Comparison of simulation approaches for chemically amplified resists

Andreas Erdmann, Wolfgang Henke, Stewart Robertson, Ernst Richter, Bernd Tollkuehn, Wolfgang Hoppe

Proceedings Volume 4404, (2001) https://doi.org/10.1117/12.425196

KEYWORDS: Diffusion, Data modeling, Performance modeling, Lithography, Calibration, Chemically amplified resists, Critical dimension metrology, Device simulation, Photoresist materials, Picture Archiving and Communication System

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Showing 5 of 21 publications

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