We report on measurements and calculations of the ultrafast exciton relaxation dynamics in ZnO. Time-resolved
differential reflectivity measurements of bulk ZnO were performed as a function of excitation wavelength. Bi-exponential
decays of the A and B exciton states are observed with a fast (~2-5 ps scale) and a slower (~50-100
ps scale) component, which depend strongly on excitation wavelength. Theoretical calculations based on a
multi-state, coupled rate equation model were directly compared with the experiments to account for the rapid
scattering between the A and B valence bands. Results show that the inter-valence band scattering is most
likely not responsible for the fast initial relaxation. Instead our results show that carrier diffusion can play an
important role in explaining the initial fast relaxation.
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