Silicon doped vanadium dioxide (VO2) films were successfully prepared on high purity Si(111) substrate. Confirmed by X-ray diffraction, all samples showed a preference orientation of (011) direction. Introducing silicon led grain sizes decreasing comparing to undoped VO2 film, and this result induced a narrow hysteresis width in MIT performance. Furthermore, silicon doped VO2 films annealing in different temperature presented different phase transition properties. In the electrical, a higher annealing temperature resulted in a decrease of sheet resistance and lowering the transition temperature. In terahertz optical transmittance, silicon doped VO2 films keep an excellent modulation ratio, indicating a great potential in the application of terahertz modulator devices.
Vanadium dioxide (VO2) films have great potential applications in photoelectric switching, storage devices, terahertz modulators and smart windows, due to the abruptly insulator-metal phase transition (IMT) near room temperature. In this research, vanadium oxide films were deposited by DC reactive magnetron sputtering in different annealing time of 450°C on glass substrates. As for electrical properties, the increasing of annealing time turns out sheet resistance increases at first, and then decreases in insulating phase, vice versa in metallic phase. In optical properties, the visible transmittance of VO2 films initially drops with annealing time prolonging, afterwards the transmittance slightly recovers. Differences between the electrical and optical are due to the grain size. Moreover, VO2 film annealing 15 min presents excellent visible transmittance, highly near-IR modulation efficiency (about 92% at a wavelength of 1100nm) and the lowest phase transition temperature (55.7°C). This result indicates that an appropriate annealing ambient can facilitate the application of VO2 film in smart windows.
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