The ongoing scaling of semiconductor devices necessitates increasing development of new and disruptive technologies. Curvilinear layout design and optical proximity correction (OPC) are among the innovations facilitating these advancements in technologies. However, they face challenges in mask enablement technology, including issues with mask writing, data volume management, design complexity, mask data representation, mask qualification, and metrology. In this paper, curvilinear mask test patterns and measurement methodologies are newly proposed for mask qualification and masks specification. Using contour-based mask metrology, edge placement error (EPE), mean-to-target (MTT) and uniformity (CDU) based on target maximum curvature (TMC) are measured and used as the main qualification metrics instead of traditional metrics such as critical dimensions (CD). These novel methods will partly complement standard qualification methods used for non-curvilinear (Manhattan) masks. A set of unique mask test structures are also proposed to extract the minimum set of curvilinear mask rules which enables experimental definition and verification of the manufacturing process.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.