We demonstrate a wafer-level process for achieving monolithic photonic integration of a light-emitting diode (LED) with a waveguide and photodiode on a GaN-on-silicon platform. Both silicon removal and back-side thinning are conducted to achieve a suspended device architecture. A highly confined waveguide that utilizes the large index contrast between GaN and air is used for the connection between the LED and the photodiode. The suspended waveguide is considered as an in-plane escape cone of the LED, and the photodiode is located at the other end of the waveguide. The photons emitted from the LED are transported to the photodiode through the suspended waveguide parallel to the LED surface, leading to in-plane data transport using visible light. This proof-of-concept monolithic integration paves the way towards in-plane visible light communication as well as photonic computation on a single chip.
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