Common anti-reflective films on Sulfide Zinc(ZnS) Substrate has low hardness and poor protective effect, thus cannot meet the requirement of harsh environment. Composite anti-reflective and protective films with ZnS, YbF3 and DLC films are developed. This Diamond-like Carbon(DLC) films with high infrared transmittance and high hardness is developed by quasi-molecule laser in vacuum. The deposition parameters and performance of DLC and YbF3 films are optimized. The adhesion performance of the composite films is improved by introducing optimized adhesive coating, optimized thickness of DLC films and so on. The composite films has many advantages such as high transmittance in far IR region, good adhesion, anti-scratch performance, it also can pass boil water test, tape adhesion test and scrub test.
Hydrogen-free Diamond-like Carbon(DLC) films onto silicon wafer are deposited by pulsed laser deposition(PLD) at a
substrate temperature of 25 °C in vacuum. The laser source used was an 20 ns KrF excimer laser beam with the
wavelength of 248 nm and maximum laser energy of 600 mJ at a repetition rate of 10Hz. The laser intensity used vary
from 1.02×109W/cm2 to 2.24×109W/cm2. Infrared transittance, Raman spectroscopy and nano-hardness are used to
analyze the comprehensive performance of the films, and the results show that the film deposited at laser intensity of
1.28×109W/cm2 is the best among other films. This can be explained well by that the carbon ion energy at laser intensity
of 1.28×109W/cm2 is suitable to form sp3 bonds than sp2 bonds. If carbon ion energy is too low, it has not enough energy
to from sp3 bonds. While, if carbon ion energy is too high, extra energy will transfer sp3 bonds to sp2 bonds. Raman
spectrum measurement showed a unsymmetrical broad peak with a center at 1550 cm-1 for all films. The ID/IG calculated
by Gaussian fit of Raman spectrum is as low as 0.44. There are few graphite particles on these DLC films. The
nano-hardness of DLC films is relatively high. The DLC films improve Silicon wafers' anti-scratch performance
efficiently. The DLC films are scratched 100000 times under 9.8N press on RS-5600 films scratch machine, no nick is
observed after scratch. The highest IR transmittance between 3 and 5μm of Silicon wafers increase 22%, from 54.5% to
66.5% after coated by DLC films, which approaches the highest IR transmittance in theory. The mean IR transmittance
between 3 and 5μm of the Diamond-like Carbon films deposited at laser intensity of 1.28×109W/cm2 is 65.6%.
Hydrogen-free DLC films has been deposited by femtosecond laser pulse onto (1 0 0) p-type silicon
substrates. The laser used for deposition has a pulse energy from 0.4mJ to1.6mJ and pulse width of about 50
fs with the repetition rate of 1 kHz. The laser intensities on the target are from 0.7×1014W/cm2 to
2.8×1014W/cm2. Uniform and wear-resistant DLC films is deposited with fs laser ablating a high purity
graphite target at room temperature in vacuum. It is shown that the films has a good hardness ranged from
20 GPa to 30 GPa. Raman spectroscopy, X-ray Photoelectron Spectroscopy and micro-hardness are used to
analyze the comprehensive performance of the films, and the results show that the films deposited at the
laser intensity of 1.4×1014W/cm2 has better hardness and a higher sp3 content. The sp3 fraction of the films is
estimated to be as high as 45.6%.
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