The silicon photonics platform is still missing a native source. Therefore, using a novel epitaxial process based on aspect ratio trapping and nano-ridge engineering we demonstrated an powerfull approach to fabricate GaAs-InGaAs lasers directly on a standard silicon substrate. In depth morphological and optical characterisation confirms the high quality of the material. We demonstrated lasing from DFB-type devices with etched gratings and with metal gratings. In the presentation we will also discuss the possibility for coupling to standard silicon waveguides and for extending the emission to longer wavelengths.
Luxtera and TSMC have jointly developed a new generation 100Gbps/λ-capable silicon photonics platform in a commercial 300 mm CMOS line. We present process details and the performance of the photonic device library.
In this paper we discuss design and characterization of silicon-photonics-based 100 Gbps (4×26 Gbps) transceivers for parallel single mode fiber communication. We also address some key underlying technologies including silicon photonics wafer processing, photonic device libraries, light source integration and packaging technologies.
Diabetes is a fast growing metabolic disease, where the patients suffer from disordered glucose blood levels. Monitoring
the blood glucose values in combination with extra insulin injection is currently the only therapy to keep the glucose
concentration in diabetic patients under control, minimizing the long-term effects of elevated glucose concentrations and
improving quality of life of the diabetic patients. Implantable sensors allow continuous glucose monitoring, offering the
most reliable data to control the glucose levels. Infrared absorption spectrometers offer a non-chemical measurement
method to determine the small glucose concentrations in blood serum. In this work, a spectrometer platform based on
silicon photonics is presented, allowing the realization of very small glucose sensors suitable for building implantable
sensors. A proof-of-concept of a spectrometer with integrated evanescent sample interface is presented, and the route
towards a fully implantable spectrometer is discussed.
In this work we present the first experimental demonstration of a novel class of heterogeneously integrated III V-on-silicon microlasers. We first show that by coupling a silicon cavity to a III-V wire, the interaction between the propagating mode in the III-V wire and the cavity mode in the silicon resonator results in high, narrow band reflection back into the III-V waveguide, forming a so-called resonant mirror. By combining two such mirrors and providing optical gain in the III-V wire in between these 2 mirrors, laser operation can be realized. We simulate the reflectivity spectrum of such a resonant mirror using 3D FDTD and discuss the results. We also present experimental results of the very first optically pumped heterogeneously integrated resonant mirror laser. The fabricated device measures 55 μm by 2 μm and shows single mode laser emission with a side-mode suppression ratio of 37 dB.
In this paper we review our work in the field of heterogeneous integration of III-V semiconductors and non-reciprocal optical materials on a silicon waveguide circuit. We elaborate on the heterogeneous integration technology based on adhesive DVS-BCB die-to-wafer bonding and discuss several device demonstrations. The presented devices are envisioned to be used in photonic integrated circuits for communication applications (telecommunications and optical interconnects) as well as in spectroscopic sensing systems operating in the short-wave infrared wavelength range.
Hybrid silicon lasers based on bonded III-V layers on silicon are discussed with respect to the challenges and
trade-offs in their design and fabrication. Focus is on specific designs that combine good light confinement in
the gain layer with good spectral control provided by grating structures patterned in silicon.