Mr. Yat-Min Chen Profile

Yat-Min Chen

at National Taiwan Univ

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 25 August 2006 Paper

Analytical and T-CAD modeling of pentacene thin-film transistors

Yet-Min Chen, Yu-Sheng Chen, Jian-Jang Huang, Jiun-Haw Lee, Yu-Wu Wang, Yi-Kai Wang

Proc. SPIE. 6336, Organic Field-Effect Transistors V

KEYWORDS: Thin films, Electrodes, Polymers, Metals, Resistance, Organic materials, Transistors, Field effect transistors, Circuit switching, Device simulation

Read Abstract +

Many researches report that the mobility in organic material is dependent on not only the gate field but also the grain size. There is also some evidence to prove that the gate length is strongly related to the carrier mobility. We construct both the analytical model of organic thin film transistor and the large signal circuit model designed by T-CAD to fit the measured I _DS - V _DS curves. We first apply basic I _DS - V _DS equations in both triode and saturation regions with mobility μ best fitted to measured I-V curves. The "best-fitted" μ increases with the gate length, and is related to the increase of total channel resistance due to the presence of small grains size of pentacene next to source/drain electrodes. We then use the Advanced Design System software to design the large signal circuit model. Similar to the MOSFET, we add the additional parameters to fit the I _DS - V _DS curves, ex: Rgd, Rgs, and Rp. Here, Rgd. With the circuit simulation, we find that Rgd presents the leakage current from gate to source, and it affects the slope of curves in the saturation region in the I _DS - V _DS curves. The equivalent circuit can fit the I _DS - V _DS curves very well with the proper parameter set.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print format on SPIE.org.

PERSONAL SIGN IN
Full access may be available with your subscription

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Institutional Access:

PURCHASE THIS CONTENT

INTERESTED IN A FREE CORPORATE TRIAL?

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years