Dr. Yi Fu Profile

Dr. Yi Fu

at Virginia Commonwealth Univ

SPIE Involvement:

Author

Publications (9)

Proceedings Article | 8 February 2007 Paper

Point defect reduction in GaN layers grown with the aid of SiNx nanonet by metalorganic chemical vapor deposition

S. Chevtchenko, J. Xie, Y. Fu, X. Ni, H. Morkoç, C. Litton

Proceedings Volume 6473, 64730N (2007) https://doi.org/10.1117/12.706828

KEYWORDS: Gallium nitride, Epitaxial lateral overgrowth, Metalorganic chemical vapor deposition, Sapphire, Temperature metrology, Luminescence, Diodes, Gallium, Dielectrics, Metals

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Proceedings Article | 8 February 2007 Paper

Nanoheteroepitaxy of GaN on columnar SiC substrates by metalorganic chemical vapor deposition

Yi Fu, Ü. Özgür, Q. Fan, N. Biyikli, S. Chevtchenko, H. Morkoç, You Ke, Robert Devaty, W. Choyke, C. Inoki, T. Kuan

Proceedings Volume 6473, 64731K (2007) https://doi.org/10.1117/12.706889

KEYWORDS: Gallium nitride, Silicon carbide, Annealing, Metalorganic chemical vapor deposition, Surface finishing, Interfaces, Hydrogen, Transmission electron microscopy, Etching, Scanning electron microscopy

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Proceedings Article | 8 February 2007 Paper

Low dislocation density GaN grown by MOCVD with SiNx nano-network

J. Xie, Ü. Özgür, Y. Fu, X. Ni, H. Morkoç, C. K. Inoki, T. S. Kuan, J. Foreman, H. Everitt

Proceedings Volume 6473, 647304 (2007) https://doi.org/10.1117/12.706936

KEYWORDS: Gallium nitride, Transmission electron microscopy, Metalorganic chemical vapor deposition, Silicon carbide, Sapphire, Diodes, Epitaxial lateral overgrowth, Tin, Nickel, Thin films

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Proceedings Article | 8 February 2007 Paper

Magneto-transport properties of MOVPE-grown AlxGa1-xN/AlN/GaN heterostructures with high-mobility two-dimensional electron gas

N. Biyikli, H. Cheng, Ç. Kurdak, X. Ni, Y. Fu, J. Xie, I. Vurgaftman, J. Meyer, H. Morkoç, C. Litton

Proceedings Volume 6473, 647309 (2007) https://doi.org/10.1117/12.706499

KEYWORDS: Aluminum, Gallium nitride, Gallium, Resistance, Etching, Heterojunctions, Silicon, Epitaxial lateral overgrowth, Statistical analysis, Atomic force microscopy

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Proceedings Article | 8 February 2007 Paper

Investigation of current voltage characteristics of n-GaN/i-AlxGa1-xN/n-GaN structures

X. Ni, J. Xie, Y. Fu, H. Morkoç, I. Steinke, Y. Liu, P. Ruden, K.-A. Son, B. Yang

Proceedings Volume 6473, 64730A (2007) https://doi.org/10.1117/12.706793

KEYWORDS: Aluminum, Gallium nitride, Heterojunctions, Gallium, Polarization, Epitaxial lateral overgrowth, Metalorganic chemical vapor deposition, Sensors, Interfaces, Reactive ion etching

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Proceedings Article | 8 February 2007 Paper

Growth and polarity control of GaN and AlN on carbon-face SiC by metalorganic vapor phase epitaxy

Yi Fu, Q. Fan, S. Chevtchenko, Ü. Özgür, H. Morkoç, You Ke, Robert Devaty, W. Choyke, C. Inoki, T. Kuan

Proceedings Volume 6473, 647305 (2007) https://doi.org/10.1117/12.706938

KEYWORDS: Gallium nitride, Aluminum nitride, Silicon carbide, Etching, Scanning electron microscopy, Aluminum, Annealing, Vapor phase epitaxy, Gallium, Atomic force microscopy

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Proceedings Article | 3 March 2006 Paper

Gd-implanted GaN as a candidate for spin injector

V. Avrutin, Ü. Özgür, J. Xie, Y. Fu, F. Yun, H. Morko, V. Litvinov

Proceedings Volume 6121, 61210U (2006) https://doi.org/10.1117/12.646951

KEYWORDS: Gadolinium, Gallium nitride, Magnetism, Semiconductors, Magnetic semiconductors, Chemical species, Spintronics, Magnetic sensors, Statistical analysis, Ferromagnetics

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Proceedings Article | 3 March 2006 Paper

Characterization of GaN epitaxial films grown on SiN_x and TiN_x porous network templates

J. Xie, Y. Fu, Ü. Özgür, Y. Moon, F. Yun, H. Morko, H. Everitt, A. Sagar, R. Feenstra, C. Inoki, T. Kuan, L. Zhou, D. Smith

Proceedings Volume 6121, 61210B (2006) https://doi.org/10.1117/12.646858

KEYWORDS: Gallium nitride, Tin, Transmission electron microscopy, Annealing, Silicon carbide, Sapphire, Metalorganic chemical vapor deposition, Luminescence, Scanning electron microscopy, Crystals

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Proceedings Article | 11 February 2006 Paper

Surface spatial profiles of defects in GaN

D. Johnstone, S. Akarca-Biyikli, J. Xie, Y. Fu, C. Litton, H. Morkoc

Proceedings Volume 6121, 61210N (2006) https://doi.org/10.1117/12.653320

KEYWORDS: Gallium nitride, Gallium, Metalorganic chemical vapor deposition, Diffusion, Polarization, Oxygen, Capacitance, Profiling, Vapor phase epitaxy, Nitrogen

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Showing 5 of 9 publications

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