The break-down voltage is critical for the reliability and the impact ionization of the 4H-SiC avalanche photodiodes (APDs). In this paper, we report a simulation for 4H-SiC p+-n APDs, study the effect of the doping concentration and thickness of the absorption and multiplication region on break-down voltage and gain. We find that with the doping concentration increasing, the break-down voltage decreases, the gain firstly increases and then decreases. When the thickness increases, the break-down voltage firstly increases and then keeps constant due to the width of the depletion region. By adjusting the break-down voltage, the performance of the 4H-SiC APDs can be optimized.
The modeling and optimization of several photodetectors by semiconductor simulation tool Silvaco Atlas are reported. First is the simulations of p-i-n InP/In0.53Ga0.47As/InP photodetector at low bias. How the dark current, photoresponse and the transient response are influenced by the doping concentration and thickness of the absorption layer are reported. Second is a two-terminal p-n-p heterojunction phototransistors (2T-HPTs) based on In0.53Ga0.47As/InP. To optimize the device performance, the adjustment of the doping level, width, and compositional grading of base, the effects of high-low doping in collector region and the insertion of a thin undoped InGaAs layer in the base region have been investigated. The last is a simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodetectors (SAGCM APDs), study the effect of multiplication layer parameters on the operating voltage ranges of APD.
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