This paper will discuss the development of a millimeter-wave (mm-wave) receiver module used in a sparse array passive imaging system. Using liquid crystal polymer (LCP) technology and low power InP low noise amplifiers (LNA), enables the integration of the digital circuitry along with the RF components onto a single substrate significantly improves the size, weight, power, and cost (SWaP-C) of the mm-wave receiver module compared to previous iterations of the module. Also comparing with previous generation modules, the operating frequency has been pushed from 77 GHz to 95 GHz in order to improve the resolution of the captured image from the sparse array imaging system.
In this presentation we will discuss the performance and limitations of our 220 channel video rate passive millimeter wave imaging system based on a distributed aperture with optical upconversion architecture. We will cover our efforts to reduce the cost, size, weight, and power (CSWaP) requirements of our next generation imager. To this end, we have developed custom integrated circuit silicon-germanium (SiGe) low noise amplifiers that have been designed to efficiently couple with our high performance lithium niobate upconversion modules. We have also developed millimeter wave packaging and components in multilayer liquid crystal polymer (LCP) substrates which greatly improve the manufacturability of the upconversion modules. These structures include antennas, substrate integrated waveguides, filters, and substrates for InP and SiGe mmW amplifiers.
In this paper we present two vertical transitions, in multilayer LCP substrates for millimeter wave (mmW) imaging application. The first transition is from conductor-backed co-planar waveguide (CBCPW) to strip line, and the second one connects CBCPW to substrate integrated waveguide (SIW). The multilayer structure consists of three LCP layers and four metal claddings. The CBCPW is designed on the top LCP layer, the strip line is sandwiched by the top and middle layers, and the SIW is built within the middle and bottom layers. Micro vias construct the side wall for the SIW, and electrically connect the transmission lines and waveguides. Both of the transitions perform low loss and low reflection at 77 GHz. They can efficiently connect the passive and active components in the front-end RF module of our mmW imager. Additionally, they may have promising application in high-performance systems, requiring high density, low size, weight, and power (SWaP).
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