KEYWORDS: Design, Scanning electron microscopy, Overlay metrology, Monte Carlo methods, Electrons, Lithography, Precision measurement, Electron beam lithography, Design rules, Signal detection
As CMOS node advanced, device patterns become smaller and denser, which as a result, decrease overlay budget. Each contributor to overlay error is significant and should be minimized, even at early stage of technology development. The performance of optical overlay metrology is challenged by the difference between optical target and device structure, which response differently to lithography optics (aberration response), hence reduce correlation to device overlay. E-Beam overlay can mitigate this gap as it can measure device-size structures. In this case, the challenge is to measure small, dense and buried patterns, which may have low visibility (contrast and edge resolution), but still provide acceptable total measurement uncertainty (TMU) to reduce error budget from the tight overlay specs. Finding optimal target where its design is similar or close to device and is measurable with robust performance, without designing and re-design targets in multiple tape-out cycles, can be done by simulating scanning electron microscopy (SEM) measurements of different device-like targets and find the optimal point where predicted performances are good and the design is as close to the device. In this paper we propose a method that evaluates measurement performances of different SEM overlay target designs using e-Beam simulation of back-scatter electrons (BSE) yield from buried layers. Targets with different design rules: pitch, critical dimensions (CD) and edge-to-edge distance are simulated at different measurement conditions and results are compared to measurement of actual targets on wafer. The comparison shows that measurement performance can be predicted by simulation, which can point out optimal target design and measurement conditions.
Metal oxide resists (MORs) have been becoming one of the most promising candidates that facilitates the extension of EUV single exposure by improving both lithographic resolution and etch selectivity. However, to succeed high volume manufacturing, the MORs process should be robust and persistent regardless of lithographic process fluctuation that might occur. In this work, the systematic examinations on the MORs process have been explored in order to understand the MORs patterning mechanism. We found that the ADI CD (After Development Inspection Critical Dimension) could be varied with trivial fluctuation of EUV radiation, humidity, and incomplete condensation reaction. In particular, the humidity around a coated resist was the important element that affected the condensation reaction and determined the insolubility of MORs against developer solution, which consequently defines the ADI CD. Thus, the methods that enable not only the moisture control but the sufficient condensation reaction were carefully examined. Moreover, it is investigated whether MORs can enhance further the etch selectivity while reducing the intrinsic resist defect. Several strategies have been implemented, which allow the CD variation to be reduced and the process window to be enlarged compared to the early stage MORs processes.
EUV lithography has been one of the key factors that enables the continuation of semiconductor scaling beyond N7. While it is a vital technique for the HVM of the most recent advanced logic and DRAM devices, the EUVL still needs more efforts in order to fully exploit its capability and extend the application. One particular aspect that has been considered as of critical importance is the optical/chemical stochastic effects which may cause L/S, contact pattern defects limiting the efficiency of EUVL. The simplest way to alleviate the stochastic effects is to employ the higher EUV exposure dose; however, this approach is impractical as it obviously leads to even lower productivity. In this work, the alternative chemicals - such as EUV PTD developer and NTD rinse which are specifically prepared to overcome the stochastic effects - are examined to enhance the performance efficiency of EUVL. The focused features that thoroughly explored are EUV dose, local CD uniformity, PR swelling, pattern collapse, and defects. It is found that, with the chemical composition modification of developer and rinse, EUV pattern fidelity can be effectively optimized resulting in extended process window and improved productivity. It is expected that this work would not only facilitate the extension of EUV application but also help understand how EUV resists behave when they are under the influence of ancillaries.
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