Metal halide perovskite has the advantages of facile manufacture, high color purity and good spectral stability, which has a broad application prospect in light-emitting diodes (LEDs). Balanced charge transportation and recombination is vital for efficient perovskite light-emitting diodes (PeLEDs). In this work, we applied ZnO films with different thickness as electron transport layer (ETL) in near-infrared PeLEDs to modulate electron transportation. With controlled ZnO films, the external quantum efficiency (EQE) of PeLEDs is improved from 3.81% to 12.24%. The improvements provide a broad research prospect for efficient PeLEDs.
All-inorganic copper based metal halides have aroused wide attention as emissive materials due to their excellent optoelectronic properties, such as high photoluminescence quantum yield (PLQY) and good environmental stability. We report a facile low temperature solution process to obtain high quality Cs3Cu2I5 film by using chlorobenzene (CB) as antisolvent. The light-emitting diodes based on the high quality Cs3Cu2I5 films as emissive layers achieved a luminance of 74 cd/m2 and an external quantum efficiency (EQE) of 0.013%.
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