Prof. Yong-Hang Zhang Profile

Prof. Yong-Hang Zhang

Professor at Arizona State Univ

SPIE Involvement:

Author | Editor

Publications (29)

Proceedings Article | 9 March 2024 Presentation

Optically-addressed monolithically-integrated multi-band photodetectors using type-II superlattice materials

Zheng Ju, Xin Qi, Allison McMinn, Xiaoyang Liu, Yong-Hang Zhang

Proceedings Volume PC12895, PC128950A (2024) https://doi.org/10.1117/12.3001983

KEYWORDS: Photodetectors, Superlattices, Staring arrays, Readout integrated circuits, Palladium, Spectral response, Short wave infrared radiation, Photodiodes, Optical switching, Modeling

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Proceedings Article | 9 March 2024 Presentation

Material properties and applications of InAs/InAsSb type-II superlattice in IR lasers and photodetectors

Yong-Hang Zhang

Proceedings Volume PC12895, PC1289508 (2024) https://doi.org/10.1117/12.3000901

KEYWORDS: Photodetectors, Mid-IR, Long wavelength infrared, Infrared lasers, Superlattices, Materials properties, Photoluminescence, Time metrology, Modeling, Interfaces

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Proceedings Article | 17 March 2023 Presentation

Enhanced second-order nonlinear susceptibility in asymmetric type-II quantum well

Zheng Ju, Stephen Schaefer, Jacob Khurgin, Yong-Hang Zhang

Proceedings Volume PC12405, PC124050U (2023) https://doi.org/10.1117/12.2647759

KEYWORDS: Quantum wells, Complex systems, Visible radiation, Terahertz radiation, Ranging, Photonic integrated circuits, Photonic crystals, Photonic crystal devices, Optical components, Nonlinear crystals

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Proceedings Article | 5 October 2015 Presentation

Real-time baseline correction technique for MWIR and LWIR time-resolved photoluminescence spectroscopy (Presentation Recording)

Zhi-Yuan Lin, Yong-Hang Zhang

Proceedings Volume 9555, 95550J (2015) https://doi.org/10.1117/12.2190353

KEYWORDS: Mid-IR, Long wavelength infrared, Luminescence, Modulation, Time resolved spectroscopy, Spectroscopy, Computer simulations, Carrier dynamics, Infrared radiation, Photodetectors

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Proceedings Article | 4 June 2015 Paper

Effects of AlSb interfaces on InAs/InAsSb type-II infrared superlattice material properties

Elizabeth Steenbergen, Zhiyuan Lin, Said Elhamri, William Mitchel, Yong-Hang Zhang, Ron Kaspi

Proceedings Volume 9451, 945114 (2015) https://doi.org/10.1117/12.2177696

KEYWORDS: Superlattices, Interfaces, Temperature metrology, Infrared radiation, Luminescence, Infrared detectors, Indium arsenide, Stereolithography, Phonons, Magnetism

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Proceedings Article | 4 June 2015 Paper

Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices

Zhi-Yuan Lin, Jin Fan, Shi Liu, Yong-Hang Zhang

Proceedings Volume 9451, 94510Q (2015) https://doi.org/10.1117/12.2177526

KEYWORDS: Long wavelength infrared, Mid-IR, Superlattices, Luminescence, Gallium antimonide, Photodetectors, Indium arsenide, Infrared radiation, Infrared photography, Molecular beam epitaxy

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Proceedings Article | 24 September 2013 Paper

Proton radiation effects on the photoluminescence of infrared InAs/InAsSb superlattices

Elizabeth Steenbergen, Jeremy Massengale, Vincent Cowan, Zhiyuan Lin, Yong-Hang Zhang, Christian Morath

Proceedings Volume 8876, 887609 (2013) https://doi.org/10.1117/12.2026872

KEYWORDS: Superlattices, Infrared detectors, Luminescence, Stereolithography, Infrared radiation, Infrared photography, Detector arrays, Radiation effects, Sensors, Indium arsenide

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Proceedings Article | 4 February 2013 Paper

InAs/InAsSb type-II superlattice infrared nBn photodetectors and their potential for operation at high temperatures

Oray Cellek, Zhao-Yu He, Zhi-Yuan Lin, Ha Sul Kim, Shi Liu, Yong-Hang Zhang

Proceedings Volume 8631, 86311I (2013) https://doi.org/10.1117/12.2007612

KEYWORDS: Photodetectors, Quantum efficiency, Diffusion, Superlattices, Infrared radiation, Long wavelength infrared, Infrared photography, Mercury cadmium telluride, Mid-IR, Temperature metrology

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Proceedings Article | 15 October 2012 Paper

Temperature-dependent minority carrier lifetimes of InAs/InAs[sub]1-x[/sub]Sb[sub]x[/sub] type-II superlattices

E. Steenbergen, B. Connelly, G. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J. Fastenau, A. W. Liu, S. Elhamri, O. Cellek, Y.-H. Zhang

Proceedings Volume 8512, 85120L (2012) https://doi.org/10.1117/12.930949

KEYWORDS: Stereolithography, Superlattices, Temperature metrology, Sensors, Long wavelength infrared, Astatine, Quantum efficiency, Infrared detectors, Electrons, Semiconductors

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Proceedings Article | 31 May 2012 Paper

InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications

Oray Cellek, Hua Li, Xiao-Meng Shen, Zhiyuan Lin, Elizabeth Steenbergen, Ding Ding, Shi Liu, Qiang Zhang, Ha Sul Kim, Jin Fan, Michael DiNezza, W. Hank Dettlaff, Preston Webster, Zhaoyu He, Jing-Jing Li, Shane Johnson, David Smith, Yong-Hang Zhang

Proceedings Volume 8353, 83533F (2012) https://doi.org/10.1117/12.925076

KEYWORDS: Long wavelength infrared, Mid-IR, Photodetectors, Superlattices, Infrared radiation, Stereolithography, Infrared photography, Luminescence, Antimony, Gallium antimonide

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Proceedings Article | 31 May 2012 Paper

NIR/LWIR dual-band infrared photodetector with optical addressing

O. Cellek, H. Kim, J. Reno, Y.-H. Zhang

Proceedings Volume 8353, 83533E (2012) https://doi.org/10.1117/12.920862

KEYWORDS: Near infrared, Long wavelength infrared, Photodetectors, Quantum well infrared photodetectors, Sensors, Infrared radiation, Switching, Staring arrays, Infrared photography, Gallium arsenide

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Proceedings Article | 21 February 2012 Paper

Optimal optical designs for planar GaAs single-junction solar cells with textured and reflective surfaces

Shi Liu, Ding Ding, Shane Johnson, Yong-Hang Zhang

Proceedings Volume 8256, 82560M (2012) https://doi.org/10.1117/12.909841

KEYWORDS: Solar cells, Gallium arsenide, Reflectivity, Optical design, Solar energy, Sun, Absorption, Energy conversion efficiency, Light scattering, Semiconductors

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Proceedings Article | 21 February 2012 Paper

A novel method to eliminate the measurement artifacts of external quantum efficiency of multi-junction solar cells caused by the shunt effect

Jing-Jing Li, Swee Lim, Yong-Hang Zhang

Proceedings Volume 8256, 825616 (2012) https://doi.org/10.1117/12.912790

KEYWORDS: External quantum efficiency, Germanium, Indium gallium arsenide, Solar cells, Multijunction solar cells, Resistance, Device simulation, Lithium, Indium gallium phosphide, Diodes

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Proceedings Article | 21 January 2012 Paper

Study of the valence band offsets between InAs and InAs1-xSbx alloys

Elizabeth Steenbergen, Oray Cellek, Dmitri Lubyshev, Yueming Qiu, Joel Fastenau, Amy W. K. Liu, Yong-Hang Zhang

Proceedings Volume 8268, 82680K (2012) https://doi.org/10.1117/12.907101

KEYWORDS: Indium arsenide, Laser sintering, Stereolithography, Antimony, Gallium antimonide, Superlattices, Long wavelength infrared, Quantum wells, Luminescence, Mid-IR

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Proceedings Article | 21 January 2012 Paper

Optically addressed multiband photodetector for infrared imaging applications

O. O. Cellek, Y.-H. Zhang

Proceedings Volume 8268, 82682N (2012) https://doi.org/10.1117/12.909063

KEYWORDS: Near infrared, Quantum well infrared photodetectors, Photodetectors, Long wavelength infrared, Gallium arsenide, Mid-IR, Sensors, Resistance, Staring arrays, Infrared imaging

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Proceedings Article | 21 January 2012 Paper

Structural properties of InAs/InAs1-xSbx type-II superlattices

Lu Ouyang, Elizabeth Steenbergen, O. Orkun Cellek, Yong-Hang Zhang, David Smith

Proceedings Volume 8268, 826830 (2012) https://doi.org/10.1117/12.912276

KEYWORDS: Stereolithography, Antimony, Gallium antimonide, Laser sintering, Indium arsenide, Interfaces, Superlattices, Modulation, Metalorganic chemical vapor deposition, X-ray diffraction

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Proceedings Article | 12 February 2010 Paper

Improved performance of GaAsSb/GaAs SQW lasers

N. Hossain, S. R. Jin, S. Sweeney, S.-Q. Yu, S. Johnson, D. Ding, Y.-H. Zhang

Proceedings Volume 7616, 761608 (2010) https://doi.org/10.1117/12.842253

KEYWORDS: Gallium arsenide, Quantum wells, Vertical cavity surface emitting lasers, Temperature metrology, Semiconductor lasers, Internal quantum efficiency, Manufacturing, Semiconducting wafers, Measurement devices, Quantum efficiency

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Proceedings Article | 7 February 2009 Paper

Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures

S. Horst, S. Chatterjee, K. Hantke, P. Klar, C. Lange, I. Nemeth, M. Schwalm, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. Koch, W. Rühle, S. Johnson, J.-B. Wang, Y.-H. Zhang

Proceedings Volume 7214, 72141A (2009) https://doi.org/10.1117/12.808364

KEYWORDS: Gallium arsenide, Antimony, Transmission electron microscopy, Luminescence, Heterojunctions, Quantum wells, Phonons, Spectroscopy, Aluminum, Gallium

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Proceedings Article | 15 January 2008 Paper

Determination of spontaneous emission quantum efficiency in InGaAs/GaAs quantum well structures

Ding Ding, Shane Johnson, Jiang-Bo Wang, Shui-Qing Yu, Yong-Hang Zhang

Proceedings Volume 6841, 68410D (2008) https://doi.org/10.1117/12.759592

KEYWORDS: Quantum wells, Quantum efficiency, Temperature metrology, Indium gallium arsenide, Internal quantum efficiency, Solids, Luminescence, Molecular beam epitaxy, Absorption, Gallium arsenide

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Proceedings Article | 7 March 2007 Paper

Thermally assisted electroluminescence: a viable means to generate electricity from solar or waste heat?

Bauke Heeg, Jiang-Bo Wang, Shane Johnson, Benjamin Buckner, Yong-Hang Zhang

Proceedings Volume 6461, 64610K (2007) https://doi.org/10.1117/12.708233

KEYWORDS: Photovoltaics, Solar cells, Quantum efficiency, Solar energy, Energy efficiency, Light emitting diodes, Luminescence, Electroluminescence, Active optics, Sun

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Proceedings Article | 26 February 2007 Paper

Fundamental mechanisms of electroluminescence refrigeration in heterostructure light-emitting diodes

S.-Q. Yu, J.-B. Wang, D. Ding, S. Johnson, D. Vasileska, Y.-H. Zhang

Proceedings Volume 6486, 648604 (2007) https://doi.org/10.1117/12.701301

KEYWORDS: Electroluminescence, Electrons, Radon, Light emitting diodes, Heterojunctions, Semiconductors, Gallium arsenide, Doping, Electron holes, Thermoelectric materials

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Proceedings Article | 28 February 2006 Paper

Photoluminescence refrigeration in semiconductors

J.-B. Wang, S. R. Johnson, D. Ding, S.-Q. Yu, Y.-H. Zhang

Proceedings Volume 6115, 61152C (2006) https://doi.org/10.1117/12.645359

KEYWORDS: Luminescence, Internal quantum efficiency, Semiconductors, Quantum efficiency, Gallium arsenide, Absorption, Energy efficiency, Laser energy, External quantum efficiency, Electroluminescence

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Proceedings Article | 8 December 2003 Paper

1.3-µm GaAsSb/GaAs VCSELs

Philip Dowd, Shane Johnson, Sergio Chaparro, Stewart Feld, Matthew Horning, Martin Adamcyk, Yong-Hang Zhang

Proceedings Volume 5248, (2003) https://doi.org/10.1117/12.512732

KEYWORDS: Vertical cavity surface emitting lasers, Semiconducting wafers, Reliability, Continuous wave operation, Gallium arsenide, Quantum wells, Doping, Wafer-level optics, Reflectivity

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Proceedings Article | 11 June 2003 Paper

High-mobility InAs/AlSb heterostructures for spintronics applications

Yuri Sadofyev, Y. Cao, S. Chaparro, A. Ramamoorthy, B. Naser, J. Bird, S. Johnson, Y.-H. Zhang

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.510557

KEYWORDS: Spintronics, Indium arsenide, Quantum wells, Magnetism, Heterojunctions, Gallium arsenide, Gallium antimonide, Nanostructures, Physics, Antimony

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Proceedings Article | 27 April 2000 Paper

Integration of 32x32 photodiode arrays with silicon for massively parallel optical interconnects

Chang Ryu, Bernhard Koelle, Shane Johnson, Philip Dowd, Raenaurd Turpin, S. Adhiveeraraghavan, Jin Xu, YongHang Zhang, Daniel Docter

Proceedings Volume 3952, (2000) https://doi.org/10.1117/12.384389

KEYWORDS: Photodiodes, Silicon, Metals, Optical interconnects, PIN photodiodes, Vertical cavity surface emitting lasers, Gold, Indium, Aluminum, Absorption

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Proceedings Article | 30 April 1999 Paper

Optical interconnects for high-speed data links

Chang Ryu, Bernhard Koelle, Shane Johnson, Philip Dowd, Raenaurd Turpin, Parag Kelkar, YongHang Zhang

Proceedings Volume 3631, (1999) https://doi.org/10.1117/12.348313

KEYWORDS: Vertical cavity surface emitting lasers, Silicon, Modulation, Gallium arsenide, Glasses, Indium, Optical interconnects, Mirrors, Eye, Indium gallium arsenide

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Proceedings Article | 2 May 1997 Paper

External cavity mid-infrared semiconductor lasers

Han Le, George Turner, Juan Ochoa, M. Manfra, Christopher Cook, YongHang Zhang

Proceedings Volume 3001, (1997) https://doi.org/10.1117/12.273799

KEYWORDS: Reflectivity, Semiconducting wafers, Semiconductors, Semiconductor lasers, Mid-IR, Antireflective coatings, Diffraction gratings, Waveguides, Indium arsenide, Tunable lasers

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Proceedings Article | 4 April 1997 Paper

Monolithic integration of GaAs optoelectronic devices using thermal oxide isolation (TOI)

Charles Wheeler, Sonu Daryanani, Jun Shen, YongHang Zhang

Proceedings Volume 3003, (1997) https://doi.org/10.1117/12.271068

KEYWORDS: Field effect transistors, Oxides, Vertical cavity surface emitting lasers, Light emitting diodes, Gallium arsenide, Mirrors, Etching, Transistors, Modulation, Oxidation

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A novel integration method is described that relies on the thermal oxidation of AlAs to form a buried current blocking layer. This integration technology, called thermal oxidation isolation (TOI), is an extension of recent work involving oxidized VCSELs. However, in addition to incorporating a conventional thermal oxide current aperture to define VCSEL active regions, a buried oxide layer is also used to provide inter-device isolation. As a demonstration of this concept, a GaAs MESFET and resonant cavity LED are integrated and characterized. The buried oxide layer is situated under the FET channel such that the transistor is effectively stacked on top of the LED. The oxide layer is also used to form a current aperture in the LED and directs current flow vertically through this device. Solid-source MBE is used to grow the device layers on a p-type GaAs substrate. The epitaxial structure consists of a p-type bottom mirror consisting of 24.5 pairs of alternating AlAs and GaAs quarter-wave layers, an undoped one-wave active region containing 3 multiplied by 80 angstrom InGaAs quantum wells and a single n-type AlAs/GaAs top mirror period. The fabrication sequence, described in some detail, is straightforward. A wet etch is used to define one mesa for the LED and a second for the MESFET. The top AlAs layer, exposed at the mesa periphery by this etch, is oxidized at 410 degrees. Celsius in a steam ambient to form the current- guiding regions. A conventional MESFET fabrication sequence is then used to complete the transistor and form the LED cathode (which is connected to the FET drain). A back contact is then deposited to form the LED anode. In all, five mask levels are used to fabricate the integrated FET/LED (or VCSEL) structure. Functionality of these prototype devices is demonstrated by dc and modulation measurements. The MESFET gate length and width are 3 micrometer and 100 micrometer, respectively. The transistor operated in the depletion mode with a typical Idss of 8 mA and a maximum transconductance of 35 mS/mm. The LED wavelength is about 990 nm and has output power in the (mu) W range when driven by the MESFET.