Mr. Yongdae Kim Profile

Yongdae Kim

at EUVL Infrastructure Development Ctr Inc

SPIE Involvement:

Author

Publications (20)

Proceedings Article | 28 July 2014 Paper

Performance in practical use of actinic EUVL mask blank inspection

Takeshi Yamane, Yongdae Kim, Noriaki Takagi, Tsuneo Terasawa, Tomohisa Ino, Tomohiro Suzuki, Hiroki Miyai, Kiwamu Takehisa, Haruhiko Kusunose

Proceedings Volume 9256, 92560P (2014) https://doi.org/10.1117/12.2067566

KEYWORDS: Photomasks, Inspection, Surface roughness, Prototyping, Semiconducting wafers, Defect detection, Critical dimension metrology, Extreme ultraviolet lithography, Light scattering, CCD cameras

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Proceedings Article | 17 April 2014 Paper

Analysis of phase defect effect on contact hole pattern using a programmed phase defect in EUVL mask

Yongdae Kim, Tsuneo Terasawa, Tsuyoshi Amano, Sunghyun Oh, Yoonsuk Hyun, Hidehiro Watanabe

Proceedings Volume 9048, 90482Q (2014) https://doi.org/10.1117/12.2046571

KEYWORDS: Photomasks, Semiconducting wafers, Extreme ultraviolet lithography, Scanning electron microscopy, Printing, Extreme ultraviolet, Optical lithography, Phase measurement, Inspection, Erbium

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Proceedings Article | 6 April 2011 Paper

Feasibility of EUVL thin absorber mask for sub-32nm half pitch patterning

Yoonsuk Hyun, Juntaek Park, Sunyoung Koo, Yongdae Kim, Seokkyun Kim, Changmoon Lim, Donggyu Yim, Sungki Park

Proceedings Volume 7969, 79690Y (2011) https://doi.org/10.1117/12.879371

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Reticles, Reflectivity, Extreme ultraviolet, Semiconducting wafers, Nanoimprint lithography, Printing, Optical lithography, Scanning electron microscopy

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Proceedings Article | 20 March 2010 Paper

Feasibility of EUVL thin absorber mask for minimization of mask shadowing effect

Yoonsuk Hyun, Juntaek Park, Sunyoung Koo, Yongdae Kim, Keundo Ban, Seokkyun Kim, Changmoon Lim, Donggyu Yim, Hyeongsoo Kim, Sungki Park

Proceedings Volume 7636, 763614 (2010) https://doi.org/10.1117/12.846506

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Reticles, Nanoimprint lithography, Critical dimension metrology, Extreme ultraviolet, Printing, Reflectivity, Silicon, Ruthenium

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Proceedings Article | 11 May 2009 Paper

Evaluation for EAPSM life time by ArF pellicle characteristic

Kang Joon Seo, Ji Sun Ryu, Goo Min Jeong, Shin Cheol Kang, Yong Dae Kim, Sang Chul Kim, Chang Yeol Kim

Proceedings Volume 7379, 73791S (2009) https://doi.org/10.1117/12.824304

KEYWORDS: Pellicles, Photomasks, Air contamination, Transmittance, Contamination, Semiconducting wafers, Lithography, Inspection, Critical dimension metrology, Fluorine

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Proceedings Article | 20 March 2009 Paper

Evaluation of shadowing and flare effect for EUV tool

James Moon, Cheol-Kyun Kim, Byoung-Sub Nam, Byoung-Ho Nam, Yoon-Suk Hyun, Suk-Kyun Kim, Chang-Moon Lim, Yong-Dae Kim, Mun-Sik Kim, Yong-Kyoo Choi, Chang-Reol Kim, Donggyu Yim

Proceedings Volume 7271, 727144 (2009) https://doi.org/10.1117/12.814364

KEYWORDS: Extreme ultraviolet, Critical dimension metrology, Extreme ultraviolet lithography, Semiconducting wafers, Lithography, Photomasks, Scanning electron microscopy, Wafer testing, Silicon, Light scattering

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Proceedings Article | 19 May 2008 Paper

The study to optimize CD uniformity by reliable area CD measurement on 45nm D/R DRAM

Yongkyoo Choi, Sunghyun Oh, Munsik Kim, Yongdae Kim, Changreol Kim

Proceedings Volume 7028, 70281O (2008) https://doi.org/10.1117/12.793065

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Photomasks, Scanning electron microscopy, Transmittance, Spatial filters, Image filtering, Image enhancement, Image processing, Error analysis

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Proceedings Article | 19 May 2008 Paper

An explosive haze formation under low energy exposure

Junsik Lee, Yongdae Kim, Yongkyoo Choi, Changreol Kim

Proceedings Volume 7028, 70282B (2008) https://doi.org/10.1117/12.793085

KEYWORDS: Air contamination, Photomasks, Raman spectroscopy, Packaging, Explosives, Inspection, Reticles, Pellicles, Ultraviolet radiation, Organic materials

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Proceedings Article | 19 May 2008 Paper

The source of carbon contamination for EUV mask production

Yongdae Kim, Junsik Lee, Yongkyoo Choi, Changreol Kim

Proceedings Volume 7028, 70281U (2008) https://doi.org/10.1117/12.799668

KEYWORDS: Carbon, Photomasks, Extreme ultraviolet lithography, Contamination, Extreme ultraviolet, Reflectivity, Analytical research, Lithography, Raman spectroscopy, Scanning probe microscopy

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Proceedings Article | 21 March 2008 Paper

EUV mask inspection tool using high NA DUV inspection tool

Yongkyoo Choi, Sunghyun Oh, Munsik Kim, Yongdae Kim, Changreol Kim

Proceedings Volume 6921, 692123 (2008) https://doi.org/10.1117/12.773145

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, Deep ultraviolet, Reflectivity, Defect inspection, Extreme ultraviolet lithography, EUV optics, Etching, Defect detection

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SPIE Journal Paper | 1 January 2007

Control of chemical residue on photomasks using thermal treatment

Han-Byul Kang, Yong-Dae Kim, Jong-Min Kim, Hyun-Joon Cho, Moon-Hwan Choi, Sang-Soo Choi, Jee-Hwan Bae, Cheol-Woong Yang

JM3, Vol. 6, Issue 01, 013008, (January 2007) https://doi.org/10.1117/12.10.1117/1.2435715

KEYWORDS: Ions, Air contamination, Photomasks, Chromatography, Potassium, Phase shifts, Lithography, Thermal effects, Chemical analysis, Materials science

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Proceedings Article | 8 November 2005 Paper

A study of organic contamination control on photomask surface for 65-nm tech node

Jong-Min Kim, Han-Byul Kang, Yong-Dae Kim, Hyun-Joon Cho, Sang-Soo Choi

Proceedings Volume 5992, 59923D (2005) https://doi.org/10.1117/12.631267

KEYWORDS: Air contamination, Photomasks, Natural surfaces, Chromium, Contamination control, Chemical analysis, Ions, Mask cleaning, Laser irradiation, Carbon

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Proceedings Article | 28 June 2005 Paper

A study for the control of chemical residuals on photomasks by using a thermal treatment for 65-nm node

Han-Byul Kang, Jong-Min Kim, Yong-Dae Kim, Hyun-Joon Cho, Sang-Soo Choi

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617117

KEYWORDS: Air contamination, Ions, Photomasks, Humidity, Chromatography, Ultraviolet radiation, Semiconducting wafers, Chemical analysis, Manufacturing, 193nm lithography

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Proceedings Article | 12 May 2005 Paper

The effect of polarized 193nm irradiation on photomask haze formation

Y. Kim, H. Kang, Yuan Zhang, Chuong Tran, Nigel Farrar, Jennifer Qin, Barry Rockwell, H. Cho, Rand Cottle, David Chan, Pat Martin, S. Choi, Chris Progler

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.598913

KEYWORDS: Photomasks, Air contamination, Pellicles, Laser irradiation, Ions, Pulsed laser operation, Chromium, Chromatography, Inspection, Laser scanners

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Proceedings Article | 10 May 2005 Paper

Effective control of photomask surface chemical residuals through thermal treatment

Han-Byul Kang, Jong-Min Kim, Yong-Dae Kim, Hyun-Joon Cho, Sang-Soo Choi

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.599871

KEYWORDS: Ions, Photomasks, Air contamination, Chromatography, 193nm lithography, Thermal effects, Transmittance, Scanning probe microscopy, Semiconducting wafers, Lithography

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Proceedings Article | 20 August 2004 Paper

Decrease of chrome residue on MoSiON in embedded attenuated-PSM processing

Yong-Dae Kim, Dae-Woo Kim, Dong-Seuk Lee, Pil-Jin Jang, Hyuk-Joo Kwon, Hyun-Jun Cho, Jin-Min Kim, Sang-Soo Choi

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557721

KEYWORDS: Etching, Carbon, Photomasks, Scanning probe microscopy, Plasma, Chromium, Lithography, Polymers, Critical dimension metrology, Fluorine

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Proceedings Article | 17 December 2003 Paper

Dehydration bake effects with UV/O3 treatment for 130-nm node PSM processing

Yong-Dae Kim, Dong-Seuk Lee, Dong-Il Park, Hyuk-Joo Kwon, Jin-Min Kim, Sung-Mo Jung, Sang-Soo Choi

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.517977

KEYWORDS: Lithography, Photomasks, Photoresist processing, Quartz, Adhesives, Head-mounted displays, Coating, Inspection, Phase shifts, Binary data

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Proceedings Article | 27 December 2002 Paper

Preserving EAPSM phase and transmission in the clean process

Se-Jong Choi, Si-Yeul Yoon, Yong-Dae Kim, Hak-Weon Lee, Dae-Hong Kim, Si-Woo Lee, Dong-Heok Lee, Jin-Min Kim, Sang-Soo Choi, Soo Hong Jeong

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467480

KEYWORDS: Particles, Photomasks, Phase shifting, Chemistry, Glasses, Phase shifts, Semiconducting wafers, Chromium, Etching, Liquids

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Proceedings Article | 1 August 2002 Paper

Highly anisotropic etching of phase-shift masks using ICP of CF4-SF6-CHF3 gas mixtures

Se-Jong Choi, Han-Sun Cha, Si-Yeul Yoon, Yong-Dae Kim, Dong-Hyuk Lee, Jin-Min Kim, Jin-Su Kim, Dong-Soo Min, Pil-Jin Jang, Byung-Soo Chang, Hyuk-Joo Kwon, Boo-Yeon Choi, Sang-Soo Choi, Soo Hong Jeong

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476984

KEYWORDS: Etching, Plasma, Photomasks, Phase shifts, Plasma etching, Gases, Chlorine, Scanning electron microscopy, Anisotropic etching, Surface roughness

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There is considerable interest in phase shift masks as a route to extending the resolution, contrast, and depth of focus of lithographic tools beyond what is achievable with the normal chrome mask technology. A problem that has so far hindered the introduction of phase shift masks has been the difficulty of phase and transmittance control when a phase shift mask is applied to practical use. Also, to apply phase shift layer (MoSiON), it remains that effects several critical mask parameters including sidewall slope, surface roughness, and critical dimension. For these reasons, this process requires a high degree of control of the etch process of shift layer. So in this paper, we described a technique for the fabrication of phase shift masks by etch rate of a MoSiON layer. Etching experiments of MoSiON were performed using different fluorinated gas mixtures. Four of them, CF₄/O₂/He, SF₆/O₂/He, CHF₃/O₂/He and Cl₂/CF₄/O2/He were chosen for high etch rate, sidewall slope, and surface morphology. Each added gases had a unique property on the etch rate, anisotropy, surface roughness and sidewall morphology. Result indicates that vertical slope and smooth surface are obtained using the Cl₂/ CF₄/O₂/He and SF₆/O₂/He mixture. With increasing O₂ flow rate to the SF₆/O₂/He Plasma and added Cl₂ gas to the CF₄/O₂/He Plasma, the MoSiON etching profile becomes anisotropic without undercutting and trench profile. It is probably due to both increasing etch rate and sidewall passivation of Cl₂ ion flux. When Cl₂ gas was added to the CF₄/O₂/He Plasma, the small addition of chlorine was enough to protect the exposed sidewall of the undercutting, therefore, higher flow rate of chlorine had to be added to protect the sidewall of the undercutting by forming a sidewall passivation layer. These results show that both increasing O₂ flow rate to the SF₆/O₂/He Plasma and the addition of Cl₂ to the CF₄/O₂/He plasma are necessary in order to achieve a vertical profile and a smooth surface morphology.

Proceedings Article | 1 August 2002 Paper

Etching selectivity and surface profile of attenuated phase-shifting mask using CF4/O2/He inductively coupled plasma (ICP)

Si-Yeul Yoon, Se-Jong Choi, Yong-Dae Kim, Dong-Hyuk Lee, Han-Sun Cha, Jin-Min Kim, Sang-Soo Choi, Soo Hong Jeong

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476952

KEYWORDS: Quartz, Etching, Plasma, Scanning electron microscopy, Phase shifts, Photomasks, Phase shifting, Dry etching, Surface roughness, Silicon

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