A method for designing and depositing rectangular wave broadband-pass filter is put forward after a deep study of the nature of the film-filters. A rectangular wave OD3-A broadband-pass filter sample is designed and prepared with this method, with its reference wavelength λ0 =515nm in the working range of 400~1100nm. The average transmittance of the sample in its pass-band of λ0 ±25nm reaches 92.7%, meanwhile the transmittance in the high-reflective bands of λ ≠ λ0 ± 25 nm is less than 0.1%. The transmittance of the thin film sample is tested, and the spectrum meet the requirement. It turned out to be a more advanced technology of designing and depositing rectangular wave broadband-pass filter. Compared with the Fabry-Perot Interferometer narrow-band pass filters’ films which needs optical-controlling method, and the traditional film which combines short and long pass filters making the coatings very thick and with low transmittance in transition zone. it is more economical, have more wide range of transmission and the transmittance is higher in the range of pass-band.
A method for designing and depositing rectangular wave broadband-pass filter is put forward after a deep study of the nature of the film-filters. A rectangular wave OD3-A broadband-pass filter sample is designed and prepared with this method, with its reference wavelength λ0=515nm in the working range of 400~1100nm. The average transmittance of the sample in its pass-band of λ0 ±25nm reaches 92.7%, meanwhile the transmittance in the high-reflective bands of λ ≠ λ0 ±25 nm is less than 0.1%. The transmittance of the thin film sample is tested, and the spectrum meet the requirement. It turned out to be a more advanced technology of designing and depositing rectangular wave broadband-pass filter. Compared with the Fabry-Perot Interferometer narrow-band pass filters’ films which needs optical-controlling method, and the traditional film which combines short and long pass filters making the coatings very thick and with low transmittance in transition zone. it is more economical, have more wide range of transmission and the transmittance is higher in the range of pass-band.
ZnS and Ge are very normal optical thin film materials in Infrared wave. Studying the influence of different substrate baking temperature to refractive index and actual deposition rates is very important to promote optical thin film quality. In the same vacuum level, monitoring thickness and evaporation rate, we use hot evaporation to deposit ZnS thin film materials and use ion-assisted electron beam to deposit Ge thin film materials with different baking temperature. We measure the spectral transmittance with the spectrophotometer and calculate the actual deposition rates and the refractive index in different temperature. With the higher and higher temperature in a particular range, ZnS and Ge refractive index become higher and actual deposition rates become smaller. The refractive index of Ge film material change with baking temperature is more sensitive than ZnS. However, ZnS film actual deposition rates change with baking temperature is more sensitive than Ge.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.