Dr. Yongwoo Kim Profile

Dr. Yongwoo Kim

Principal Engineer at SAMSUNG Electronics Co Ltd

SPIE Involvement:

Author

Publications (6)

Proceedings Article | 26 May 2022 Presentation + Paper

Improvement of local CDU by using low speckle imaging

Hyounghwa Jin, Yongwoo Kim, Harim Oh, Jaewoong Sohn, Woosung Jin, Kangyeol Yun, Jaehyung Jung, Hyosung Lee

Proceedings Volume 12051, 1205107 (2022) https://doi.org/10.1117/12.2615747

KEYWORDS: Speckle, Semiconducting wafers, Speckle pattern, Speckle imaging, Line width roughness, Pulsed laser operation, Photoresist materials, Stochastic processes, Scanners, Optical lithography

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Proceedings Article | 21 March 2012 Paper

Plasmonic lithography modeling and measurement of near-field distribution of plasmonic nano-aperture

Jae Yong Lee, Howon Jung, Jinhee Jang, Jae Hahn, Seok Kim, Yongwoo Kim

Proceedings Volume 8323, 832320 (2012) https://doi.org/10.1117/12.916237

KEYWORDS: Nondestructive evaluation, Photoresist materials, Near field, Lithography, Plasmonics, Process modeling, Finite-difference time-domain method, Photoresist developing, Near field scanning optical microscopy, 3D modeling

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In plasmonic nano lithography, a photoresist responds to the localized electric field which decays evanescently in the direction of depth. A simple analytic model is suggested to predict profiles of exposed and finally developed pattern with a finite contrast of photoresist. In this model, the developing process is revisited by accounting the variation of dissolution rate with respect to expose dose distribution. We introduce the concept of nominal developing thickness (NDT) to determine the optimized developing process fitting to the isointensity profile. Based on this model, we obtained three dimensional distribution of near-field of bowtie shaped plasmonic nano aperture in a metal film from the near-field lithography pattern profile. For the near-field exposure, we fabricated a nano aperture in a aluminum metal film which is coated on the contact probe tip. By illuminating 405 nm diode laser source, the positive type photoresist is exposed by the localized electric field produced by nano aperture. The exposed photoresist is developed by the TMAH based solution with a optimum NDT, which leads the developing march encounters the isoexposure contour at threshold dose. From the measurement of developed pattern profile with a atomic force microscope (AFM), the three-dimensional isoexposure (or iso-intensity) surface at the very near region from the exit plane of an aperture (depth: 5 ~ 50 nm) is profiled. Using the threshold dose of photoresist and exposure time, the absolute intensity level is also measured. The experimental results are quantitatively compared with the calculation of FDTD (finite- difference time-domain) method. Concerning with the error in exposure time and threshold dose value, the error in measurement of profile and intensity are less than 6% and 1%, respectively. We expect the lithography model described in this presentation allows more elaborated expectation of developed pattern profile. Furthermore, a methodology of mapping is useful for the quantitative analysis of near-field distribution of nano-scale optical devices.

Proceedings Article | 21 March 2012 Paper

Design of a high positioning contact probe for plasmonic lithography

Jae Hahn, Jinhee Jang, Howon Jung, Yongwoo Kim, Seok Kim

Proceedings Volume 8323, 832322 (2012) https://doi.org/10.1117/12.916274

KEYWORDS: Lithography, Plasmonics, Finite element methods, Near field scanning optical microscopy, Mechanics, Silicon, Nanolithography, Scanning probe lithography, Microfabrication, Optical lithography

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Proceedings Article | 21 March 2012 Paper

High-resolution laser direct writing with a plasmonic contact probe

Jinhee Jang, Seok Kim, Yongwoo Kim, Howon Jung, Jae Hahn

Proceedings Volume 8323, 83232A (2012) https://doi.org/10.1117/12.916359

KEYWORDS: Metals, Near field optics, Near field, Optical lithography, Plasmonics, Laser development, Nanolithography, Diffraction, Raster graphics, Near field scanning optical microscopy

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