IGBT in power system has been dominating MOS (Metal Oxide Semiconductor) transistor since IGBTs (Insulated Gate
Bipolar Transistor) guarantee better conduction loss and large current capacity. The radiation induced characteristics of
IGBT are mainly emphasized the threshold shifting due to the oxide charge trapping in MOS and the reduction of current
gain in the bipolar transistor being inherently composed in the IGBT structure. A lot of analysis on IGBT irradiation has
been carried out by researchers. The IGBT in the converter plays an important role in switching. In this paper, the IGBT
macro-model for the DC/DC converter is implemented and analyzed the electrical characteristics by SPICE simulation
model. In addition, the design SPICE parameters of BF (forward beta), KP (MOS trans-conductance), and VT (threshold
voltage) by γ radiation effects are evaluated.
Radiation hardening parts are to be used for satellites and nuclear power plants due to various kinds of radiation particles in space and radiation environment. Here, our focus is to implement a testing board of AVR Microcontroller checking for Single Event Upsets (SEU); the effects of protons on the electronic devices. The SEU results form the level change of stored information due to photon radiation and temperature in the space environment. The impact of SEU on PLD (Programmable Logic Devices) technology is most apparent in SRAM/ROM/DRAM devices wherein the state of storage cell can be upset. In this research, a simple and powerful test technique is suggested, and the results are presented for the analysis and future reference. In our experiment, the proton radiation facility (having the energy of 30 MeV with a beam current of 20 uA in the cyclotron) available at KIRAMS (Korea Institute of Radiological Medical Sciences) has been applied on two kinds of commercially available SRAM and EEPROM.
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