Ms. Youngmi Kim Profile

Youngmi Kim

at Dongbu HiTek Co Ltd

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Author

Publications (5)

Proceedings Article | 23 March 2011 Paper

Improvement on post-OPC verification efficiency for contact/via coverage check by final CD biasing of metal lines and considering their location on the metal layout

Youngmi Kim, Jae-Young Choi, Kwangseon Choi, Jung-Hoe Choi, Sooryong Lee

Proceedings Volume 7973, 79732T (2011) https://doi.org/10.1117/12.870707

KEYWORDS: Etching, Metals, Optical proximity correction, Error analysis, Resolution enhancement technologies, Bridges, Photomasks, Model-based design, Head, Logic devices

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As IC design complexity keeps increasing, it is more and more difficult to ensure the pattern transfer after optical proximity correction (OPC) due to the continuous reduction of layout dimensions and lithographic limitation by k1 factor. To guarantee the imaging fidelity, resolution enhancement technologies (RET) such as off-axis illumination (OAI), different types of phase shift masks and OPC technique have been developed. In case of model-based OPC, to cross-confirm the contour image versus target layout, post-OPC verification solutions continuously keep developed - contour generation method and matching it to target structure, method for filtering and sorting the patterns to eliminate false errors and duplicate patterns. The way to detect only real errors by excluding false errors is the most important thing for accurate and fast verification process - to save not only reviewing time and engineer resource, but also whole wafer process time and so on. In general case of post-OPC verification for metal-contact/via coverage (CC) check, verification solution outputs huge of errors due to borderless design, so it is too difficult to review and correct all points of them. It should make OPC engineer to miss the real defect, and may it cause the delay time to market, at least. In this paper, we studied method for increasing efficiency of post-OPC verification, especially for the case of CC check. For metal layers, final CD after etch process shows various CD bias, which depends on distance with neighbor patterns, so it is more reasonable that consider final metal shape to confirm the contact/via coverage. Through the optimization of biasing rule for different pitches and shapes of metal lines, we could get more accurate and efficient verification results and decrease the time for review to find real errors. In this paper, the suggestion in order to increase efficiency of OPC verification process by using simple biasing rule to metal layout instead of etch model application is presented.

Proceedings Article | 16 March 2009 Paper

Pre-OPC layout decomposition for improved image fidelity

Shady Abdelwahed, Rami Fathy, Jae Hyun Kang, Jong Doo Kim, Youngmi Kim

Proceedings Volume 7274, 72742I (2009) https://doi.org/10.1117/12.816825

KEYWORDS: Optical proximity correction, Photomasks, Resolution enhancement technologies, Semiconducting wafers, Optical lithography, Lithography, Image processing, Manufacturing, Silicon, Microelectronics

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Proceedings Article | 16 March 2009 Paper

Smart data filtering for enhancement of model accuracy

Shady Abdelwahed, Jae Hyun Kang, Jaeyoung Choi, Jong Doo Kim, Hyesung Lee, Sungho Jun, Youngmi Kim

Proceedings Volume 7274, 727423 (2009) https://doi.org/10.1117/12.814153

KEYWORDS: Calibration, Data modeling, Process modeling, Optical proximity correction, Lithography, Semiconducting wafers, Scanning electron microscopy, Photomasks, Image processing, Critical dimension metrology

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Proceedings Article | 7 March 2008 Paper

Reticle CD error calibrated OPC model generation

Youngmi Kim, Jae-Young Choi, Jong-Doo Kim, Jeahee Kim, Jae-Won Han

Proceedings Volume 6924, 69243J (2008) https://doi.org/10.1117/12.773026

KEYWORDS: Data modeling, Reticles, Optical proximity correction, Critical dimension metrology, Calibration, Cadmium, Databases, Statistical modeling, Semiconducting wafers, Photomasks

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Proceedings Article | 1 November 2007 Paper

Application of modified jog-fill DRC rule on LFD OPC flow

Young-Mi Kim, Sang-Uk Lee, Jea-Hyun Kang, Jea-Hee Kim, Kee-Ho Kim

Proceedings Volume 6730, 67303W (2007) https://doi.org/10.1117/12.746811

KEYWORDS: Optical proximity correction, Semiconducting wafers, Lithography, Metals, Photomasks, Databases, Reticles, Optical lithography, Logic, Bridges

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