Dr. Yu Zhang Profile

Dr. Yu Zhang

at Institute of Semiconductors CAS

SPIE Involvement:

Author

Publications (21)

Proceedings Article | 18 March 2024 Paper

High-power continuous array semiconductor laser

Weiyuan Wang, Yihang Chen, Tianfang Wang, Hongguang Yu, Jianmei Shi, Juntian Cao, Zhengqi Geng, Haoran Wen, Li Li, Heng Zhang, Yu Zhang, Yingqiang Xu, Haiqiao Ni, Chengao Yang, Zhichuan Niu, Lei Cheng

Proceedings Volume 13104, 131041A (2024) https://doi.org/10.1117/12.3021960

KEYWORDS: Semiconductor lasers, High power lasers, Waveguides, Semiconducting wafers, Reliability, Fabrication, Quantum wells, Quantum processes

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Proceedings Article | 24 November 2023 Paper

Watt-level antimony laser diodes emitting at 2 μm

Zhengqi Geng, Chengao Yang, Yihang Chen, Tianfang Wang, Hongguang Yu, Jianmei Shi, Zhiyuan Wang, Juntian Cao, Yu Zhang, Donghai Wu, Yingqiang Xu, Haiqiao Ni, Dong Ji, Zhichuan Niu

Proceedings Volume 12935, 129352W (2023) https://doi.org/10.1117/12.3007691

KEYWORDS: Semiconductor lasers, Antimony, High power lasers, Semiconducting wafers, Epitaxy, Scanning electron microscopy, Quantum technologies, Quantum numbers, Fabrication, Windows

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Proceedings Article | 27 December 2022 Poster + Paper

High-output power GaSb-based diode laser with narrow n-type cladding layer

Yihang Chen, Yanzhao Yang, Tianfang Wang, Hongguang Yu, Jianmei Shi, Guiming Zhang, Bin Wu, Chengao Yang, Yu Zhang, Yingqiang Xu, Zhichuan Niu

Proceedings Volume 12311, 123110X (2022) https://doi.org/10.1117/12.2643950

KEYWORDS: Cladding, Semiconductor lasers, Waveguides, Quantum wells, Near field optics, Resistance, Aluminum, Gallium antimonide, Epitaxy, Waveguide lasers

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Proceedings Article | 27 December 2022 Paper

Single transverse mode GaSb-based ridge waveguide lasers with low lateral beam divergence

Tian-fang Wang, Cheng-ao Yang, Yi-hang Chen, Jian-mei Shi, Hong-guang Yu, Xiang-bin Su, Yu Zhang, Ying-qiang Xu, Hai-qiao Ni, Zhi-chuan Niu

Proceedings Volume 12311, 123110V (2022) https://doi.org/10.1117/12.2643841

KEYWORDS: Semiconductor lasers, Waveguide lasers, Laser optics

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Proceedings Article | 27 December 2022 Poster + Paper

Thermal characterization of high-power GaSb-based laser

Jianmei Shi, Cheng'ao Yang, Yihang Chen, Tianfang Wang, Hongguang Yu, Yu Zhang, Yingqiang Xu, Zhichuan Niu

Proceedings Volume 12311, 123110R (2022) https://doi.org/10.1117/12.2642099

KEYWORDS: High power lasers, Heatsinks, Semiconductor lasers, Waveguides, Mid-IR, Continuous wave operation, Epitaxy, Semiconducting wafers, Quantum wells, Plasma etching

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Proceedings Article | 15 December 2022 Paper

High power laser diode emitted at 2μm

Hongguang Yu, Chengao Yang, Yihang Chen, Tianfang Wang, Jianmei Shi, Yu Zhang, Yingqiang Xu, ZhiChuan Niu

Proceedings Volume 12478, 124780T (2022) https://doi.org/10.1117/12.2651536

KEYWORDS: Quantum wells, Waveguides, Semiconductor lasers, Semiconducting wafers, High power lasers, Epitaxy, Gallium antimonide, Diodes, Doping, Crystals

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Proceedings Article | 1 November 2021 Paper

GaSb-based narrow ridge waveguide laser diode with single transverse mode operation

Tian-fang Wang, Cheng-ao Yang, Yi-hang Chen, Yi Zhang, Jin-ming Shang, Yu Zhang, Ying-qiang Xu, Zhi-chuan Niu

Proceedings Volume 12057, 1205709 (2021) https://doi.org/10.1117/12.2603925

KEYWORDS: Semiconductor lasers, Waveguides, Collimation, Continuous wave operation

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Proceedings Article | 31 August 2021 Paper

Improve the performance of 2μm GaSb-based high-power lasers by reducing the thermal effect of series resistance

Yihang Chen, Yi Zhang, Cheng‘ao Yang, Jinming Shang, Tianfang Wang, Haiteng Wang, Yingqiang Xu, Yu Zhang, Zhichuan Niu

Proceedings Volume 11907, 119072V (2021) https://doi.org/10.1117/12.2603171

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Proceedings Article | 15 January 2021 Paper

Polarization measurement of 2.1μm high power GaSb-based lasers

Tian-fang Wang, Cheng-ao Yang, Yi Zhang, Jin-ming Shang, Yi-hang Chen, Sheng-wen Xie, Sen-sen Li, Yu Zhang, Ying-qiang Xu, Hai-qiao Ni, Zhi-chuan Niu

Proceedings Volume 11761, 117610F (2021) https://doi.org/10.1117/12.2586283

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Proceedings Article | 15 January 2021 Paper

Diode-pumped room temperature continuous-wave operation Tm: YAP thin-disk laser

Jin-Ming Shang, Chen-Ao Yang, Yi-Hang Chen, Yi Zhang, Yu Zhang, Tian-Fang Wang, Sen-Sen Li, Zhi-Chuan Niu

Proceedings Volume 11761, 117610G (2021) https://doi.org/10.1117/12.2586655

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Proceedings Article | 15 January 2021 Paper

Distributed Bragg reflector lasers emitting around 2.3μm

Cheng-Ao Yang, Yi Zhang, Jin-Ming Shang, Yi-Hang Chen, Tian-Fang Wang, Xiang-Bin Su, Sen-Sen Li, Hai-Qiao Ni, Yu Zhang, Ying-Qiang Xu, Zhi-Chuan Niu

Proceedings Volume 11761, 117611V (2021) https://doi.org/10.1117/12.2586587

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Proceedings Article | 2 December 2020 Paper

Fabrication of high-power 2μm GaSb-based laser

Yihang Chen, Yi Zhang, Cheng'ao Yang, Jinming Shang, Yingqiang Xu, Haibao Tong, Zhengwei Ren, Sensen Lee, Yu Zhang, Zhichuan Niu

Proceedings Volume 11717, 117172B (2020) https://doi.org/10.1117/12.2587266

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Proceedings Article | 17 May 2019 Paper

Optimum growth parameters of InAs/AlSb superlattices for interband cascade lasers

Yi Zhang, Fu-Hui Shao, Cheng-Ao Yang, Sheng-Wen Xie, Shu-Shan Huang, Ye Yuan, Jin-Ming Shang, Yu Zhang, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu

Proceedings Volume 11170, 111700V (2019) https://doi.org/10.1117/12.2532548

KEYWORDS: Superlattices, Interfaces, Laser sintering, Gallium antimonide, Atomic force microscopy, Indium arsenide, Luminescence, Antimony, Camera shutters

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Proceedings Article | 17 May 2019 Paper

Fabrication of GaSb-based distributed Bragg reflector semiconductor lasers

Cheng-Ao Yang, Sheng-Wen Xie, Yi Zhang, Jin-Ming Shang, Ye Yuan, Fu-Hui Shao, Shu-Shan Huang, Qing-Xuan Jia, Yu Zhang, Ying-Qiang Xu, Zhi-Chuan Niu

Proceedings Volume 11170, 111701A (2019) https://doi.org/10.1117/12.2533003

KEYWORDS: Semiconductor lasers, Gallium antimonide, Distributed Bragg reflectors, Chromium, Continuous wave operation, Bragg gratings, Quantum wells, Electron beam lithography, Absorption

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Proceedings Article | 17 May 2019 Paper

Micro-stripe broad-area infrared diode lasers without deterioration of output power

Sheng-wen Xie, Zhi-chuan Niu, Cheng-Ao Yang, Yi Zhang, Jin-Ming Shang, Fu-Hui Shao, Yu Zhang, Ying-qiang Xu

Proceedings Volume 11170, 111700Q (2019) https://doi.org/10.1117/12.2532478

KEYWORDS: Semiconductor lasers, Infrared radiation, Infrared lasers, Laser damage threshold, Continuous wave operation, Semiconductors, High power lasers, Semiconducting wafers, Etching, Optoelectronics

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Proceedings Article | 17 May 2019 Paper

Continuous-wave mid-infrared GaSb-based optically pumped semiconductor disk laser operating at 2 μm

Jin-Ming Shang, Jian Feng, Cheng-Ao Yang, Shen-Wen Xie, Yi Zhang, Yu Zhang, Fu-hui Shao, Cun-Zhu Tong, Zhi-Chuan Niu

Proceedings Volume 11170, 111701P (2019) https://doi.org/10.1117/12.2533460

KEYWORDS: Semiconductor lasers, Semiconductors, Continuous wave operation, Disk lasers, Optical pumping, Optical semiconductors, Quantum wells, Mirrors

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Proceedings Article | 24 January 2019 Paper

Wavelength tuning of type-II “W” quantum well of interband cascade laser

Yi Zhang, Fu-Hui Shao, Cheng-Ao Yang, Sheng-Wen Xie, Shu-Shan Huang, Ye Yuan, Jin-Ming Shang, Yu Zhang, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu

Proceedings Volume 11052, 110520L (2019) https://doi.org/10.1117/12.2521757

KEYWORDS: Indium arsenide, Quantum wells, Arsenic, Antimony, Wavelength tuning, Luminescence, Continuous wave operation, Gallium antimonide, Atomic force microscopy

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Proceedings Article | 24 January 2019 Paper

1.3um InAs/InGaAs QD laser steady output power over 1.07W

Fu-Hui Shao, Yi Zhang, Xiang-Bin Su, Hui-ming Hao, Ying-Qiang Xu, Hai-Qiao Ni, Yu Zhang, Zhi-Chuan Niu

Proceedings Volume 11052, 1105212 (2019) https://doi.org/10.1117/12.2521947

KEYWORDS: Quantum dots, Gallium arsenide, Plasma enhanced chemical vapor deposition, Reactive ion etching, Laser marking, Semiconductors, Molecular beam epitaxy, Semiconductor lasers, Continuous wave operation, Gallium

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Proceedings Article | 24 January 2019 Paper

Room temperature continuous wave operation of GaSb - based semiconductor disk laser near 2 μm

Jin-Ming Shang, Jian Feng, Cheng-Ao Yang, Shen-Wen Xie, Yi Zhang, Ye Yuan, Shu-Shan Huang, Yu Zhang, Cun-Zhu Tong, Zhi-Chuan Niu

Proceedings Volume 11052, 110520T (2019) https://doi.org/10.1117/12.2521861

KEYWORDS: Semiconductor lasers, Semiconductors, Gallium antimonide, Disk lasers, Quantum wells, Continuous wave operation, Laser countermeasures

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Proceedings Article | 15 October 2015 Paper

High-power and low-loss room temperature operation of 2.4μm GaInAsSb/AlGaAsSb type-I strained quantum-well laser diodes

Yuzhi Song, Jiakun Song, Yu Zhang, Kangwen Li, Yun Xu, Guofeng Song, Lianghui Chen

Proceedings Volume 9671, 96710P (2015) https://doi.org/10.1117/12.2199252

KEYWORDS: Semiconductor lasers, Quantum wells, Internal quantum efficiency, Continuous wave operation, Laser damage threshold, High power lasers, Gallium antimonide, Cladding, Semiconducting wafers, Molecular beam epitaxy

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Proceedings Article | 21 November 2014 Paper

MBE growth and fabrication of 2.Xum InGa(As)Sb/AlGaAsSb laser

Yu Zhang, Yuzhi Song, Junliang Xing, Yongping Liao, Chuanchuan Li, Yingqiang Xu, Yun Xu, Guofeng Song, Zhichuan Niu

Proceedings Volume 9267, 926710 (2014) https://doi.org/10.1117/12.2071640

KEYWORDS: Quantum wells, Continuous wave operation, Semiconductor lasers, Tunable lasers, Laser countermeasures, Gallium antimonide, Cladding, Etching, Semiconductors, Waveguides

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Showing 5 of 21 publications

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