Dr. Yukiko Kikuchi Profile

Dr. Yukiko Kikuchi

Researcher at Toshiba Materials Co Ltd

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Publications (14)

Proceedings Article | 8 April 2011 Paper

Study of ion implantation into EUV resist for LWR improvement

Yukiko Kikuchi, Daisuke Kawamura, Hiroyuki Mizuno

Proceedings Volume 7969, 79692H (2011) https://doi.org/10.1117/12.879359

KEYWORDS: Line width roughness, Etching, Ion implantation, Extreme ultraviolet, Ions, Photomasks, Extreme ultraviolet lithography, Dry etching, Semiconducting wafers, Photoresist processing

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Proceedings Article | 23 March 2010 Paper

Challenges of EUVL resist process toward practical application

Takayuki Toshima, Junichi Kitano, Eishi Shiobara, Shinichi Ito, Yukiko Kikuchi, Hitoshi Kosugi, Daisuke Kawamura, Keiichi Tanaka

Proceedings Volume 7636, 76362V (2010) https://doi.org/10.1117/12.846260

KEYWORDS: Extreme ultraviolet lithography, Photoresist processing, Critical dimension metrology, Semiconducting wafers, Extreme ultraviolet, Surface plasmons, Photomasks, Lithography, Nanoimprint lithography, Line edge roughness

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Proceedings Article | 23 March 2010 Paper

Process liability evaluation for beyond 22nm node using EUVL

Shunko Magoshi, Kentaro Matsunaga, Ayumi Kobiki, Ryoichi Inanami, Yumi Nakajima, Taiga Uno, Koji Murano, Kazuo Tawarayama, Hajime Aoyama, Suigen Kyoh, Kosuke Takai, Yukiyasu Arisawa, Yumi Hayashi, Ichiro Mori, Daisuke Kawamura, Yukiko Kikuchi, Satoshi Tanaka

Proceedings Volume 7636, 76361O (2010) https://doi.org/10.1117/12.846265

KEYWORDS: Extreme ultraviolet lithography, Semiconducting wafers, Manufacturing, Lithography, Etching, Extreme ultraviolet, Photoresist processing, Reactive ion etching, Silica, Metals

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Proceedings Article | 12 April 2007 Paper

Resist evaluation for EUV application at ASET

Yuusuke Tanaka, Yukiko Kikuchi, Hiroaki Oizumi, Doohoon Goo, Iwao Nishiyama

Proceedings Volume 6519, 65191M (2007) https://doi.org/10.1117/12.711980

KEYWORDS: Line width roughness, Polymers, Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Semiconducting wafers, Modulation, Printing, Photoresist processing, Additive manufacturing

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Although EUV lithography has been prepared for next generation litho-technique for several years, there are still lots of obstacles on its way. Especially, phase defect from the mask, and immaturity in the resist should be solved as soon as possible because they are directly related to realizing patterns on the wafer. ASET has been focusing on these two problems, that is, the mask-related defect control and the resist screening for EUV application. In this study, we concentrate on the resist evaluation for the EUV lithography application, mainly commercial CAR (Chemically- Amplified Resist) type resist, for example, ArF resist based on polymethacrylate and KrF resist based on poly(4- hydroxystyrene) (PHS). We screened tens of resists in viewpoint of resolution, photo-speed, and LWR (Line Width Roughness). We used two METs (Micro-Exposure Tools). The one is HiNA in ASET and the other is MET in Lawrence Berkeley National Lab. (LBNL) to evaluate resist. And we used EUV masks fabricated by DNP and ASET. Some resist showed modulation on the wafer for 28nm-hp line and space pattern and some resist showed very high photo-speed about 5mJ/cm². Photo-speed could be improved about 25% by controlling the amount of additives, PAG and quencher. However, improvement in photo-speed caused degradation in resolution. This means there are trade-off relation between resolution and photo-speed. And we also evaluated polymer-bound PAG resist, which showed new possibility for EUV resist. And we encountered unexpected problem, pattern lifting, which was solved by using bufferlayer to increase attachment force between resist and wafer surface. We conclude that polymer bound PAG resist is a good approach to lower LWR of resist for EUVL application and bufferlayer tuning and matching with resist is also needed for low LWR. The EUVL masks were fabricated by Dai Nippon Printing Co., Ltd. The HiNA set-3 projection optics were developed and provided by Nikon Corporation. This work was supported by NEDO.

Proceedings Article | 16 March 2007 Paper

Fidelity of rectangular patterns printed with 0.3-NA MET optics

Yukiko Kikuchi, Yuusuke Tanaka, Iwao Nishiyama, DooHoon Goo

Proceedings Volume 6517, 65172L (2007) https://doi.org/10.1117/12.711900

KEYWORDS: Diffusion, Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Printing, EUV optics, Photoresist processing, Optical lithography, Lithography, Semiconducting wafers

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Proceedings Article | 24 March 2006 Paper

Printability of contact-hole patterns in EUVL using 0.3-NA HiNA optics

Fumiaki Kumasaka, Yukiko Kikuchi, Iwao Nishiyama, Hiroaki Oizumi, DooHoon Goo, Yuusuke Tanaka

Proceedings Volume 6151, 61512S (2006) https://doi.org/10.1117/12.656126

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Optical lithography, Lithography, Extreme ultraviolet, Binary data, Optical proximity correction, Projection systems, Printing, Mirrors

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Proceedings Article | 24 March 2006 Paper

Sub-32nm patterning using EUVL at ASET

Yukiko Kikuchi, Hiroaki Oizumi, Doohoon Goo, Iwao Nishiyama, Yuusuke Tanaka

Proceedings Volume 6151, 61512R (2006) https://doi.org/10.1117/12.656124

KEYWORDS: Extreme ultraviolet lithography, Line width roughness, Photomasks, Extreme ultraviolet, Lithography, Immersion lithography, Semiconducting wafers, Resolution enhancement technologies, Optical lithography, Nanoimprint lithography

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Proceedings Article | 22 March 2006 Paper

Evaluation of resolution and LER in the resist patterns replicated by EUV microexposure tools

Fumiaki Kumasaka, Yukiko Kikuchi, Hiroaki Oizumi, Iwao Nishiyama, Yuusuke Tanaka, DooHoon Goo

Proceedings Volume 6151, 615107 (2006) https://doi.org/10.1117/12.655106

KEYWORDS: Line edge roughness, Extreme ultraviolet, Mirrors, Extreme ultraviolet lithography, Photomasks, Optics manufacturing, Reflectivity, Semiconducting wafers, Manufacturing, Imaging systems

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Proceedings Article | 1 July 2002 Paper

Preparation of high-aspect-ratio 70-nm patterns by supercritical drying technique in proximity x-ray lithography

Yukiko Kikuchi, Seiichi Shishiguchi, Kaoru Masuda, Nobuyuki Kawakami, Takuya Fukuda

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472268

KEYWORDS: Semiconducting wafers, X-ray lithography, Liquids, Photoresist processing, Dry etching, Etching, Lithography, Carbon monoxide, Photoresist developing, Molecular spectroscopy

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Proceedings Article | 5 September 2001 Paper

Up-to-date activities of PXL (proximity x-ray lithography)

Shinji Tsuboi, Hiroaki Sumitani, Yoshinori Nakayama, Takao Taguchi, Yasuji Matsui, Yukiko Kikuchi

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438381

KEYWORDS: Photomasks, Optical alignment, Distortion, Lithography, Overlay metrology, Optical lithography, Etching, Semiconducting wafers, Transistors, X-rays

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Proceedings Article | 21 July 2000 Paper

Delineation performances of advanced 100-kV EB writer on x-ray membrane mask

Shigehisa Ohki, Hajime Aoyama, Mizunori Ezaki, Tadahito Matsuda, Yoshinori Nakayama, Tetsuo Morosawa, Shinji Tsuboi, Yukiko Kikuchi, Kenichi Saito, Hiroshi Watanabe, Yasuji Matsui

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390033

KEYWORDS: Photomasks, X-rays, Image processing, Distortion, Silicon carbide, Silicon, Lithography, Mask making, X-ray lithography, Interferometers

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Proceedings Article | 25 August 1999 Paper

Printability of programmed x-ray mask defects

H. Yabe, K. Marumoto, Yukiko Kikuchi, Hiroshi Watanabe, Yasuji Matsui

Proceedings Volume 3748, (1999) https://doi.org/10.1117/12.360226

KEYWORDS: Photomasks, X-rays, Opacity, Critical dimension metrology, X-ray lithography, Inspection, Defect inspection, Error analysis, Optical simulations, Light sources

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Proceedings Article | 25 June 1999 Paper

Application of two-wavelength optical heterodyne alignment system in XS-1

Hirofumi Morita, Soichiro Mitsui, Masanori Suzuki, Akinori Shibayama, Yasuji Matsui, Makoto Fukuda, Yukiko Kikuchi, Takao Taguchi, Tsuneyuki Haga, Hajime Aoyama

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351120

KEYWORDS: Optical alignment, Semiconducting wafers, Photomasks, Silicon, Heterodyning, Wafer-level optics, Reflection, Reflectivity, Lithography, Wafer testing

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Proceedings Article | 9 July 1992 Paper

Study of single-layer e-beam lithography for x-ray mask making

Yukiko Kikuchi, Yoshio Gomei, Yuji Takigami, Ichiro Mori

Proceedings Volume 1671, (1992) https://doi.org/10.1117/12.136010

KEYWORDS: X-ray lithography, X-rays, Scattering, Electron beam lithography, Electrons, Silicon, Mask making, Photomasks, Laser scattering, Reactive ion etching

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Showing 5 of 14 publications

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