We present a quarter-wave plate composed of two pairs of cross-shaped elliptical nanoatennas. This setup can transform linearly polarized incident light to circular polarized light at a wavelength of 862nm. The cross-shaped elliptical configuration can control the amplitude and phase of incident light. By the modulation of the elliptical size, equal amplitude and specific phase difference can be obtained in orthogonal directions. Furthermore, as a quarter-wave plate, this configuration is not sensitive to the polarized direction of the linearly polarized incident beam. In order to verify the designed metasurface, numerical simulation were performed using the finite difference time domain method. Our results may benefit novel photonics devices design such as polarization manipulation, optical sensing, optical detecting, and photonic integration.
Terahertz radiation was generated with several designs of photoconductive antennas (strip line, dipole, trapezoid, bow-tie) fabricated on low-temperature-grown GaAs (LT-GaAs) and the emission properties of the photoconductive antennas were compared with each other. The bow-tie photoconductive antennas with nano cylinder also be fabricated. The radiation characteristics of each antenna was characterized by THz-TDS. The radiation power of the photoconductive antennas with different antenna shapes showed significant difference. The underlying physics of nano-structured PCAs are still in their early stages. Our findings will pave the way for new perspectives in the design and analysis of novel structures for more efficient THz photonic devices.
High power GaSb based type-I GaInAsSb/AlGaAsSb three quantum wells laser diodes emitting at 2.4 μm were optimized and fabricated. The laser wafer was grown with solid source Molecular Beam Epitaxy System. With optimizations of the epitaxial structure design and the ohmic contact, the operation voltage and the internal loss decreased; the internal quantum efficiency and output power increased. The internal quantum efficiency was determined about 80.1% and the internal loss was 12 cm-1 by measuring laser diodes with different cavity lengths. An uncoated 2-mm-long laser diode with 90-μm-wide aperture exhibited a threshold current density of 222 A/cm2 (74 A/cm2 per quantum well), a continuous wave output power of 232 mW and a quasi-continuous wave (1 kHz, 10 μs) output power of 1 W at room temperature.
Nowadays, traditional infrared detectors such as MCT infrared photo detectors performance nearly reached their detect theory limits. As lead to an increased interest in detectors such as QWIPs, T2SL, QCD and so on. Due to the low cost, high integration level and high performance, QWIPs is a mainstream infrared photo detector in the areas of military, medicine industries. The problem blocked the QWIPs industry development is the low quantum efficiency because of the polarization dependence of the incident light. As decided by the absorption mechanism, the QWIPs cannot absorb the normal incident infrared light. Various methods is developed to couple the normal incident light to the QWIPs. The introduction of metal gratings proved to be efficient to improve the absorption of the normal incident light which can introduce a SPPs coupling on the interface of the gratings and the QWIPs. But in the method used before usually are transmission gratings on the surface of the QWIPs devices. A kind of backscattering metal grating patterns is designed and simulated in our work to get a higher performance. It is nearly 4 times of the coupling efficiency than the transmission gratings in simulation. We also discuss some grating parameters such as grating thickness and cycle duties for their effects on the coupling efficiency and optimize these parameters to reach a highest performance. The simulation results show a new promising structure use in the QWIPs especially in the dual-band QWIPs to enhance the absorption of the long wavelength infrared light.
2.X μm InGa(As)Sb/AlGaAsSb compressively strained quantum wells laser has been grown and fabricated. Antimonide laser with 1.5mm*90μm without AR/HR emitted 550mW of continuous wave output power at 2μm.And 2.4μm laser without AR/HR output 195mW at room temperature.
The trade-off between the enhanced signal-to-noise ratio and reduced light absorption in thin-film photodetectors is
the main issue for improving device performance. Nanoscale patterning of metal/dielectric interface can couple incident
light into surface plasmon polaritons (SPPs) modes, leading to the enhanced absorption. However, due to the nature of
resonant excitation of SPPs, it is difficult to realize broadband absorption enhancement. In this study, we propose a novel
device structure to achieve absorption enhancement over the whole spectral response range of the thin-film In0.53Ga0.47As
photodetector. Numerical simulation shows that both the preferential forward scattering of InP cylinder and grating
coupled waveguide modes contribute to the broadband absorption enhancement.
In this paper, metallic back structure with one dimensional periodic nano-ridge is attached to the capping layer of the In0.53Ga0.47As photodetector with 100 nm absorption layer. We present finite difference time domain (FDTD) simulation to analyze the optical absorption enhancement of the photodetector. By comparing with the photodetector with planar metallic film, simulation results show that by introducing the nanostructure a 2.8 times and a 3 times absorption enhancements can be achieved under transverse magnetic (TM) and transverse electric (TE) polarized plane wave illuminations, respectively. Increasing the period of the nanostructure, the absorption enhancement peak positions exhibit a red shift. In addition, the optimization of the metal grating height and width is also crucial for maximizing the absorption enhancement. The absorption enhancements are well explained by surface plasmon polaritons and Rayleigh Anomalies phenomena. Solid simulation and theoretical results are both presented with good agreement with each other.
A phosphor-conversion white light using an InGaN laser diode that emits 405 nm near-ultraviolet
(n-UV) light and phosphors that emit in the red/green/blue region when excited by the n-UV light was fabricated.
The relationship of the luminous flux and the luminous efficacy of the white light with injection current were discussed.
Based on the evaluation method for luminous efficacy of light sources established by the Commission International de
I'Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the maximum luminous efficacy of
this white light fabrication method were also presented.
A high-power AlGaInP laser diode with current-injection-free region near the facet is successfully fabricated by metaorganic chemical vapor deposition (MOCVD) using the (100) direction n-GaAs substrates with a misorientation of 15 deg toward the (011) direction. The maximum continuous wave output power is about 90 mW for the traditional structure. In comparison, the maximum output power is enhanced by about 67%, and achieves 150 mW for LDs with current-infection-free regions. The fundamental transverse-mode operation is obtained up to 70 mW. Output characteristics at high temperatures are also improved greatly for an LD with a current-injection-free region, and the highest operation temperature is 70 °C at 50 mW without kink. The threshold current is about 33 mA, the operation current and the slope efficiency at 100 mW are 120 mA and 0.9 mW/mA, respectively. The lasing wavelength is 658.4 nm at room-temperature 50 mW.
In AlGaInP/GaInP multi-quantum well (MQW) lasers, the electron leakage current is a much more serious problem than that in laser diodes with longer wavelength. To further improve the output performance, the leakage current should be analyzed. In this letter, the temperature dependence of electrical derivative characteristics in AlGaInP/GaInP multi-quantum well lasers was measured, and the potential barrier for electron leakage was obtained. With the help of secondary ion mass spectroscopy (SIMS) measurement, theoretical analysis of the potential barrier was presented and compared with the measurement result. The influence of p-cladding doping level and doping profile on the potential barrier was discussed, and this can be helpful in metalorganic chemical vapor deposition (MOCVD) growth.
Usually in the calculation of valence subband structure for III-V direct bandgap material, axial approximation had been used in the Luttinger-Kohn model to simplify the computational efforts. In this letter, the valence subband structure for the GaInP/AlGaInP strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6×6 Luttinger-Kohn Hamiltonian including strain and spin-orbit splitting effects. The numerical simulation results were presented with help of the finite-difference methods. The calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. The results indicated that there was a strong warping in the GaInP valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched GaInP/AlGaInP quantum wells.
Compositional distribution of the quantum well and barrier after quantum well intermixing for GaInP/AlGaInP system was theoretically analyzed on the basis of atom diffusion law. With the compositional distribution result, the valence subband structure of the intermixed quantum well was calculated on the basis of 6×6 Luttinger-Kohn Hamiltonian, including spin-orbit splitting effects. To get more accurate results in the calculation, a full 6-band problem was solved without axial approximation, which had been widely used in the Luttinger-Kohn model to simplify the computational efforts, since there was a strong warping in the GaInP valence band. At last, the bandgap energy of the intermixed quantum well was obtained and the calculation result is of much importance in the analysis of quantum well intermixing experiments.
Liquid nitrogen is very important for MBE system. Most MBE systems use the liquid nitrogen to absorb the impurity molecules. If MBE cryoshroud is lack of liquid nitrogen, the pressure of the growth chamber will grow. This will affect the film quality. But too much liquid nitrogen is a waste. We have developed a liquid nitrogen flowrate alarm system to monitor the liquid nitrogen status in MBE cryoshroud. In this method, a temperature sensor is placed at the end of the cryoshroud. The temperature varies with changing of the liquid nitrogen status in cryoshroud. If the liquid nitrogen level in the cryoshroud is too low or too high, the LNFA will send out an alarm to warn the user to adjust the liquid nitrogen flowrate. In our experiments, we found this method works well, and the temperature responds sensitively. With the help of this system, people can view the liquid nitrogen status of the entire growth process. Compare with other method, it is very cheap.
Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.
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