Mr. Yusuke Toda Profile

Yusuke Toda

at Toppan Photomasks

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Publications (5)

Proceedings Article | 27 June 2019 Paper

The study of relationship between defect sensitivity and inspectability on EUV masks with 19x nm mask inspection

Masashi Yonetani, Karen Badger, Jed Rankin, Shinji Akima, Yusuke Toda, Itaru Yoshida, Masayuki Kagawa, Takeshi Isogawa, Yutaka Kodera, Jan Heumann, Anka Birnstein

Proceedings Volume 11178, 111780D (2019) https://doi.org/10.1117/12.2537430

KEYWORDS: Inspection, Extreme ultraviolet, Defect inspection, Photomasks, Opacity, Optical inspection, Signal detection, Critical dimension metrology, Extreme ultraviolet lithography, Defect detection

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Proceedings Article | 3 October 2018 Presentation + Paper

WEREWOLF: sensitivity optimization for early 7 nm EUV masks using an optical 19x nm inspection system

Karen Badger, Masashi Yonetani, Yusuke Toda, Masayuki Kagawa, Takeshi Isogawa, Jan Heumann

Proceedings Volume 10810, 1081008 (2018) https://doi.org/10.1117/12.2502560

KEYWORDS: Inspection, Polarization, Extreme ultraviolet, Photomasks, Optical inspection, Defect detection, Semiconducting wafers, EUV optics, Defect inspection, Inspection equipment

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EUV (Extreme Ultraviolet) lithography is one of the key enabling techniques for imaging 7-nm node and beyond wafer technologies. To ensure mask quality levels will support High Volume Manufacturing (HVM), all “defects that matter”, must be identified and screened out before shipment to the wafer fab. Mask defects that matter are the ones that print during exposure at 13.5 nm wavelength. To support EUV development and production schedules, mask defectivity must be reduced to be at or near the optical defect levels. This task is complicated by the fact that actinic EUV mask inspectors are not currently available. In the absence of these EUV inspection tools, all available methods for detecting and characterizing defects must be deployed. Based on extensive deployment and on its record for reasonable throughput, 19x nm wavelength inspection is one of the strongest candidates available today for the initial EUV mask inspection approach. However, there are several key challenges with 19x nm optical inspection of EUV masks. Aside from the documented challenges of using a non-actinic wavelength, a key challenge is that the defect sensitivity varies based on pattern sizes and defect types and therefore, a wide range of pattern sizes and defect types need to be used to optimize inspection sensitivity. Through a variety of evaluations on simple test patterns, it has been confirmed that a combination of multiple focus offsets and polarization settings enables adequate sensitivity to meet early sensitivity requirements for 7 nm EUV production masks. As the result, focus offsets and polarization settings could be optimized to successfully develop new inspection recipes that could meet a target defect criteria with multi-pass inspection. [1] In this study, we will show inspection results of programmed defect macros (PDMs) based on actual EUV device constructs. Then, it will be discussed whether a combination of multiple focus offsets and polarizations is an effective approach to increase defect sensitivity on device patterns through the analysis of PDMs. We will demonstrate how inspection parameter optimization can be done to tailor 19x nm inspection to EUV device designs and what defect sizes and types are detectable with a 19x nm inspection system to assess capability for meeting the 7nm node development and production requirements. [1] Kazunori Seki et al., “Minimizing “Tone Reversal” during 19x nm Mask Inspection,” PMJ2018 6-2

Proceedings Article | 4 October 2016 Paper

7-nm e-beam resist sensitivity characterization

Amy Zweber, Yusuke Toda, Yoshifumi Sakamoto, Thomas Faure, Jed Rankin, Steven Nash, Masayuki Kagawa, Michael Fahrenkopf, Takeshi Isogawa, Richard Wistrom

Proceedings Volume 9985, 99851J (2016) https://doi.org/10.1117/12.2243683

KEYWORDS: Photomasks, Line edge roughness, Electron beam lithography, Electrons, SRAF, Extreme ultraviolet, Image resolution, EUV optics, Inspection, Manufacturing

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Proceedings Article | 10 May 2016 Paper

Development of a new high transmission phase shift mask technology for 10 nm logic node

Thomas Faure, Yoshifumi Sakamoto, Yusuke Toda, Karen Badger, Kazunori Seki, Mark Lawliss, Takeshi Isogawa, Amy Zweber, Masayuki Kagawa, Richard Wistrom, Yongan Xu, Granger Lobb, Ramya Viswanathan, Lin Hu, Yukio Inazuki, Kazuhiro Nishikawa

Proceedings Volume 9984, 998402 (2016) https://doi.org/10.1117/12.2241480

KEYWORDS: Photomasks, Phase shifts, Logic, Lithography, Chromium, Inspection, Opacity, SRAF, Etching, Attenuators

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Proceedings Article | 1 April 2016 Paper

Lithographic qualification of high-transmission mask blank for 10nm node and beyond

Yongan Xu, Tom Faure, Ramya Viswanathan, Granger Lobb, Richard Wistrom, Sean Burns, Lin Hu, Ioana Graur, Ben Bleiman, Dan Fischer, Yann Mignot, Yoshifumi Sakamoto, Yusuke Toda, John Bolton, Todd Bailey, Nelson Felix, John Arnold, Matthew Colburn

Proceedings Volume 9780, 978006 (2016) https://doi.org/10.1117/12.2219778

KEYWORDS: Photomasks, Semiconducting wafers, Optical proximity correction, Lithography, Transmittance, Resolution enhancement technologies, Printing, SRAF, Critical dimension metrology, Phase shifts

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