Dr. Yves Quere Profile

Dr. Yves Quere

at CEA-LETI

SPIE Involvement:

Author

Publications (10)

Proceedings Article | 12 June 2003 Paper

Monitoring of photo-resist poisoning

Julia Simon, Francois Weisbuch, Yves Quere, Olivier Louveau, Christine Bourlot

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485091

KEYWORDS: Semiconducting wafers, Reflectivity, Photomasks, Dielectrics, Lithography, Plasma, Chemistry, Silicon carbide, 193nm lithography, Silicon

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Proceedings Article | 26 April 2001 Paper

Critical procedure for OPC software benchmarking with maskshop consideration

Alexandra Barberet, Gerald Galan, Gilles Fanget, Jean-Charles Richoilley, Michel Tissier, Yves Quere

Proceedings Volume 4404, (2001) https://doi.org/10.1117/12.425206

KEYWORDS: Photomasks, Optical proximity correction, Databases, Manufacturing, Inspection, Received signal strength, Optical lithography, Silicon, Lithography, Model-based design

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Proceedings Article | 9 April 2001 Paper

Mask manufacturing contribution on 248-nm and 193-nm lithography performances

Alexandra Barberet, Gilles Fanget, Jean-Charles Richoilley, Michel Tissier, Yves Quere

Proceedings Volume 4349, (2001) https://doi.org/10.1117/12.425081

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Manufacturing, Etching, Scanning electron microscopy, 193nm lithography, Laser processing, Resolution enhancement technologies, Laser applications

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Proceedings Article | 22 January 2001 Paper

Mask manufacturing contribution on 248-nm and 193-nm lithography performances

Alexandra Barberet, Gilles Fanget, Jean-Charles Richoilley, Michel Tissier, Yves Quere

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410677

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Manufacturing, Etching, Scanning electron microscopy, 193nm lithography, Laser processing, Resolution enhancement technologies, Metrology

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Proceedings Article | 2 June 2000 Paper

193-nm scanner characterization by SEM and electrical CD measurements

Laurent Pain, Yorick Trouiller, Alexandra Barberet, O. Guirimand, Gilles Fanget, N. Martin, Yves Quere, M. Nier, Emile Lajoinie, Didier Louis, Michel Heitzmann, P. Scheiblin, A. Toffoli

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386499

KEYWORDS: Scanning electron microscopy, Resistance, Etching, Lithography, Scanners, Calibration, Chemistry, Oxides, Critical dimension metrology, Photomasks

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Proceedings Article | 11 August 1999 Paper

Lithographic CD variation in contact, via, local interconnect, and damascene levels

Yorick Trouiller, Anne Didiergeorges, Gilles Fanget, Cyrille Laviron, Corinne Comboroure, Yves Quere

Proceedings Volume 3883, (1999) https://doi.org/10.1117/12.360577

KEYWORDS: Critical dimension metrology, Dielectrics, Oxides, Photoresist processing, Metals, Reflectivity, Chemical mechanical planarization, Silicon, Interfaces, Lithography

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Proceedings Article | 26 July 1999 Paper

New trends in Brunner's relation: dielectric levels

Yorick Trouiller, Anne Didiergeorges, Gilles Fanget, Cyrille Laviron, Corinne Comboure, Yves Quere

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354407

KEYWORDS: Critical dimension metrology, Dielectrics, Oxides, Photoresist processing, Metals, Reflectivity, Silicon, Chemical mechanical planarization, Copper, Interfaces

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Proceedings Article | 4 September 1998 Paper

Inorganic bottom ARC SiOxNy for interconnection levels on 0.18-um technology

Yorick Trouiller, N. Buffet, Thierry Mourier, Yveline Gobil, Patrick Schiavone, Yves Quere

Proceedings Volume 3508, (1998) https://doi.org/10.1117/12.324043

KEYWORDS: Reflectivity, Dielectrics, Critical dimension metrology, Interfaces, Metals, Silicon, Absorption, Copper, Lithography, Standards development

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Proceedings Article | 29 June 1998 Paper

Inorganic bottom ARC SiOxNy for interconnection levels on 0.18-um technology

Yorick Trouiller, N. Buffet, Thierry Mourier, Yveline Gobil, Patrick Schiavone, Yves Quere

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312422

KEYWORDS: Reflectivity, Dielectrics, Interfaces, Metals, Silicon, Critical dimension metrology, Absorption, Copper, Lithography, Tungsten

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Proceedings Article | 29 June 1998 Paper

0.18-um optical lithography performances using an alternating DUV phase-shift mask

Yorick Trouiller, N. Buffet, Thierry Mourier, Patrick Schiavone, Yves Quere

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310761

KEYWORDS: Lithography, Photomasks, Binary data, Etching, Scanning electron microscopy, Semiconducting wafers, Deep ultraviolet, Atomic force microscopy, Phase shifts, Metrology

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Showing 5 of 10 publications

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