Dr. Zhenfwi Luo Profile

Dr. Zhenfwi Luo

at Univ of Electronic Science and Technology of Chin

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Proceedings Article | 29 October 2010 Paper

Electrical and optical properties of amorphous vanadium oxide thin films deposited by DC magnetron sputtering

Zhenfei Luo, Zhiming Wu, Mingjun Du, Xiangdong Xu, Junsheng Yu, Tao Wang, Yadong Jiang

Proceedings Volume 7658, 765809 (2010) https://doi.org/10.1117/12.865957

KEYWORDS: Thin films, Temperature metrology, Vanadium, Scanning electron microscopy, Sputter deposition, Oxides, Optical properties, Transmittance, Resistance, Crystals

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In this work, vanadium oxide thin films were grown on glass slides by using reactive direct current (DC) magnetron sputtering from a vanadium target in an Ar+O₂ atmosphere. It was found that the surface morphology, electrical and optical properties were strongly affected by the deposition temperature. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to characterize the structure and surface morphology of the samples. The structures of these films showed amorphous nature according to the XRD patterns showing no sharp diffraction peak. Measurements of SEM indicated the smooth surface of film deposited at low deposition temperature and rough surface at relatively high deposition temperature. In addition, these surfaces showed no obvious crystalline morphologies, which supported the XRD results. Electrical measurement indicated that the square resistances of films showed an exponential increase from 33 kΩ/square to 46 MΩ/square as the deposition temperature decreased from 320 to 160 °C, and that the square resistancetemperature curves of films exhibited typical semiconducting behavior. The investigation of optical properties of films in near-infrared range indicated that transmittance varied from about 95 % to 55 % when the deposition temperature elevated. In the ultraviolet-visible range, optical transmission measurements revealed that films showed distinguished transmission spectra when they were grown at different deposition temperatures. In the range of 300 to 400 nm, a transmittance shoulder was observed in the spectra, and this shoulder enhanced when the deposition temperature increased. On the other hand, a transmission enhancement at 530 nm disappeared after the deposition temperature exceeded 240 °C.

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