An investigation of silicon melting occurring under femtosecond laser irradiation has been presented, The two-temperature model and photoionization model are introduced to calculate the free-carrier intensity’s evolution with time. In both models, the electrons density’s evolution under laser fluence F0 = 0.2 ,0.3, 0.5J / cm2 are performed. The maximum density reaching the threshold density for SPP excitation by these two model are discussed. For both single pulse and double pulse, according to the simulation data, the two temperature model have a more agreement with the experiment results.
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