Shortwave infrared imaging has the characteristics of high recognition and all-weather adaptation. Consequently, InGaAs short-wave infrared (SWIR) detectors find extensive applications in military and civilian fields, which imposes higher performance demands on InGaAs SWIR detectors. To optimize the performance and effectiveness of InGaAs SWIR detectors, this study delves into the fluctuation patterns of detectivity, responsivity, and dynamic range concerning integration time. Furthermore, it examines the outcomes of these parameters at various integration times. It is observed that the performance of InGaAs SWIR detectors changes at different integration times, and each parameter exhibits specific variation patterns with integration time.
Solar cell efficiency improvement is a significant research focus. To enhance the separation and reduce the recombination of photogenerated carriers in narrow bandgap GaAs nanowire solar cells (NWSCs), we propose a GaAs-GaAs1-xSbx-GaAs heterostructure NWSCs model. Adjusting the Sb concentration in GaAs1-xSbx modifies the energy band structure, effectively separating photogenerated electron-hole pairs. Increasing Sb concentration significantly boosts short circuit current density and power conversion efficiency. At x = 0.34, we achieve a short circuit current density (Jsc) of 28.3 mA·cm-2, an open-circuit voltage (Voc) of 0.93 V, and a 23.1% power-conversion efficiency (PCE) under AM 1.5G spectrum. Then, the distribution of electrons and holes in the transport process of the whole NWSCs is simulated when the Sb concentration is set to 0.34, which confirms electron separation to n-type GaAs and hole separation to p-type GaAs at x = 0.34, effectively. Moreover, the device exhibits an external quantum efficiency (EQE) of 95.9%.
In this work, we propose an innovative monolithically integrated mid-infrared quantum cascade laser optical frequency comb source at 8.6 μm. The device attains a maximum continuous wave output power of 141 mW at 20°C. Improving device high-frequency response by integrating π-shaped electrodes. When the driving current is 450mA, the laser spectrum is obviously broadened from 10 cm-1 to 34 cm-1 under 25 dBm RF injection, and the spectrum presents an optical frequency comb.
In this letter, we introduce a very long wave infrared Quantum Cascade Detector (QCD) with a peak response wavelength of 14.5 μm based on a twin-well coupled absorption region design. Different to standard, single transition well QCDs, the twin-well design effectively enhances the absorption strength of the device and broadens the response spectrum to a certain extent. At 77 K, we observed a responsivity of 3.51 mA / W and a Johnson noise limited detectivity of 1×108 Jones. Altogether, this design resulted in detection at temperatures of up to 140 K with a calibrated black-body source by light coupling using a 45° wedge. These high performance very long wave QCDs are expected to provide pollution monitoring, deep space exploration and other applications.
Mechanical transfer electrode can effectively reduce the contact surface between the electrode and semiconductor material, however this method has not been applied to improve the performance of photoelectric devices. In this paper, MoS2 thin film photodetectors are fabricated by this novel method. Compared with the MoS2 thin film photodetectors prepared by the traditional hot evaporation method, the dark current of the transfer device decreased by nearly one order of magnitude, reaching 4.6 × 10-7 A, and the detectivity also increased significantly to 2.1 × 1010 Jones. All these results show that the mechanical transfer electrode can optimize the contact interface between the electrode and semiconductor material to achieve a higher performance photodetector.
Photoluminescence of GaAs nanowires with and without AlGaAs Shell were analyzed detailly through temperature- and power-dependent photoluminescence spectroscopy. AlGaAs shell effectively eliminated the surface dangling bonds and defects caused by oxidation of GaAs surface. And a model of sub-bandgap absorption based on inhomogeneities in GaAs bandgap were applied to analyzed the “high energy tail” of GaAs nanowires with AlGaAs shell.
GaAs nanowires have widely applied in infrared devices in the past few years. However, the performance of GaAs nanowire photodetectors is strongly limited by the problem of large surface state density. At the same time, onedimensional GaAs nanowire as photosensors for infrared detection has been seldom studied. In this paper, a single GaAs nanowire infrared photodetector have been successfully fabricated and Ar plasma treatment is performed on the device to improve the performance. The treated GaAs nanowire device exhibits high responsivity of 108 A/W, which is about 6 times larger than the original one (~18 A/W). Besides, the external quantum efficiency up to 25312 % and the detectivity up to 9.21×1011 cmHz0.5W-1. At the same time, the response time τr is significantly reduces from 86.40 ms to 3.36 ms, and the recovery time τf is almost remained as 212.48 ms. The significant enhancement is due to the improvement of nanowires surface quality. These results demonstrate that GaAs nanowire is an outstanding material in infrared field devices and plasma treatment is an effective way to realize high performance nanowire photodetectors.
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