Dr. Zhiqiang Leo Li Profile

Dr. Zhiqiang Leo Li

Vice President of Engineering at Crosslight Software Inc

SPIE Involvement:

Author | Instructor

Publications (17)

Proceedings Article | 20 August 2020 Poster + Paper

Modeling of InGaAs/AlGaAsSb APDs with high gain-bandwidth product

Yegao Xiao, Zhiqiang Li, Zhanming Li

Proc. SPIE. 11498, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XIV

KEYWORDS: Indium gallium arsenide, Avalanche photodetectors, Electrons, Ionization, Computer aided design, Stochastic processes, Device simulation, Instrument modeling, Absorption

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Proceedings Article | 6 November 2018 Paper

Rigorous full-vectorial optical analysis of VCSEL using FDFD method

A. Nashed, Z. Q. Li, Z. Simon Li , Michel Lestrade , Y. G. Xiao, Y. J. Zhou

Proc. SPIE. 10812, Semiconductor Lasers and Applications VIII

KEYWORDS: Oxides, Lithium, Finite-difference time-domain method, Resonators, Polarization, Dielectrics, Magnetism, Optical analysis, Finite element methods, Vertical cavity surface emitting lasers

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Proceedings Article | 5 November 2018 Paper

Modeling of waveguide AlInAs avalanche photodiodes for high-gain-bandwidth product

Yegao Xiao, Zhiqiang Li, Yang Sheng, Zhanming Li

Proc. SPIE. 10814, Optoelectronic Devices and Integration VII

KEYWORDS: Indium gallium arsenide, Avalanche photodetectors, Waveguides, Electrons, Ionization, Avalanche photodiodes, Computer aided design, Waveguide modes, Beam propagation method, Absorption

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Proceedings Article | 22 February 2017 Paper

Two-dimensional modeling of AlInAs avalanche photodiodes for high gain-bandwidth product

Yegao Xiao, Zhiqiang Li, Michel Lestrade, Zhanming Li

Proc. SPIE. 10098, Physics and Simulation of Optoelectronic Devices XXV

KEYWORDS: Indium gallium arsenide, Avalanche photodetectors, Electrons, Receivers, Optoelectronics, Optoelectronic devices, Telecommunications, Ionization, Avalanche photodiodes, Computer aided design, Optics manufacturing, Systems modeling, Solid modeling, Instrument modeling, Absorption

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Proceedings Article | 4 March 2016 Paper

Toward designing back-illuminated CMOS image sensor based on 3D modeling

Y. G. Xiao, K. Uehara, Y. Fu, M. Lestrade, Z. Q. Li, Y. J. Zhou, Z. M. Li

Proc. SPIE. 9742, Physics and Simulation of Optoelectronic Devices XXIV

KEYWORDS: CMOS sensors, Finite-difference time-domain method, Copper indium disulfide, Sensors, Quantum efficiency, Photodiodes, 3D modeling, Optoelectronics, Image sensors, Optimization (mathematics)

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Proceedings Article | 13 March 2013 Paper

Comprehensive anaylsis of GaSb-based mid-infrared vertical-cavity surface-emitting lasers

Z. Li, Z. M. Simon Li

Proc. SPIE. 8639, Vertical-Cavity Surface-Emitting Lasers XVII

KEYWORDS: Mid-IR, Refractive index, Quantum wells, Dielectrics, Electrons, Physics, Gallium antimonide, Thermal analysis, Vertical cavity surface emitting lasers, Absorption

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Proceedings Article | 21 February 2012 Paper

Two-dimensional modeling of CdZnTe/Si based dual and triple junction solar cells

Y. Xiao, Z. Li, M. Lestrade, Z. M. Simon Li

Proc. SPIE. 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices

KEYWORDS: Finite-difference time-domain method, External quantum efficiency, Sun, Solar cells, Germanium, Silicon, Thin film solar cells, Indium gallium phosphide, Instrument modeling, Absorption

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Proceedings Article | 8 September 2010 Paper

Modeling study for developing CdZnTe(CdSe)/CIGS tandem solar cells

Y. Xiao, Z. Li, M. Lestrade, Z. M. Li

Proc. SPIE. 7771, Thin Film Solar Technology II

KEYWORDS: Solar cells, Interfaces, Quantum efficiency, Thin film solar cells, Transparent conductors, Molybdenum, Copper indium gallium selenide, Solid modeling, Tandem solar cells, Absorption

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Proceedings Article | 21 August 2009 Paper

2D modeling of silicon based thin film dual and triple junction solar cells

Y. G. Xiao, K. Uehara, M. Lestrade, Z. Q. Li, Z. M. Li

Proc. SPIE. 7409, Thin Film Solar Technology

KEYWORDS: Thin films, Finite-difference time-domain method, External quantum efficiency, Solar cells, Interfaces, Silicon, Thin film solar cells, Silicon films, Transparent conductors, Absorption

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Proceedings Article | 9 September 2008 Paper

Modeling of GaInP/GaAs/Ge and the inverted-grown metamorphic GaInP/GaAs/GaInAs triple-junction solar cells

Y. G. Xiao, Z. Q. Li, Z. M. Li

Proc. SPIE. 7043, High and Low Concentration for Solar Electric Applications III

KEYWORDS: Sun, Solar cells, Germanium, Electrons, Gallium arsenide, Resistance, Doping, Indium gallium phosphide, Instrument modeling, Absorption

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Proceedings Article | 3 September 2008 Paper

Suppressing premature edge breakdown for InP/InGaAs avalanche photodiodes by modeling analyses

Y. Xiao, Z. Li, Z. M. Simon Li

Proc. SPIE. 7055, Infrared Systems and Photoelectronic Technology III

KEYWORDS: Avalanche photodetectors, Etching, Electrons, Diffusion, Doping, Ionization, Avalanche photodiodes, Solid modeling, Instrument modeling, Absorption

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Proceedings Article | 3 October 2007 Paper

Modeling of Si-based solar cells with V-grooved surface texture by Crosslight APSYS

Y. G. Xiao, M. Lestrade, Z. Q. Li, Z. M. Li

Proc. SPIE. 6651, Photovoltaic Cell and Module Technologies

KEYWORDS: Antireflective coatings, Solar cells, Electrons, Silicon, Diffusion, Coating, Doping, Semiconducting wafers, Instrument modeling, Absorption

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Proceedings Article | 12 September 2007 Paper

Modeling of resonant cavity enhanced separate absorption charge and multiplication avalanche photodiodes by Crosslight APSYS

Y. Xiao, Z. Li, Z. M. Simon Li

Proc. SPIE. 6660, Infrared Systems and Photoelectronic Technology II

KEYWORDS: Photodetectors, Mirrors, Avalanche photodetectors, Electrons, Quantum efficiency, Ionization, Aluminum, Avalanche photodiodes, Gallium, Absorption

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Proceedings Article | 13 February 2007 Paper

Modeling of GaN based resonant-cavity light-emitting diode

Z. Simon Li, Z. Q. Li, Ray-Hua Horng

Proc. SPIE. 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI

KEYWORDS: Mirrors, Quantum wells, Lithium, Light emitting diodes, Reflectivity, Electroluminescence, Gallium nitride, Optical microcavities, Device simulation, Instrument modeling

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Proceedings Article | 8 September 2006 Paper

Modeling of multi-junction solar cells by Crosslight APSYS

Z. Li, Y. Xiao, Z. M. Simon Li

Proc. SPIE. 6339, High and Low Concentration for Solar Electric Applications

KEYWORDS: Data modeling, Solar cells, Germanium, Electrons, Gallium arsenide, Quantum efficiency, Data processing, Indium gallium phosphide, Multijunction solar cells, Instrument modeling

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Proceedings Article | 7 September 2006 Paper

Modeling of avalanche photodiodes by Crosslight APSYS

Y. Xiao, Z. Li, Z. M. Simon Li

Proc. SPIE. 6294, Infrared and Photoelectronic Imagers and Detector Devices II

KEYWORDS: Photodetectors, Avalanche photodetectors, Electrons, Ionization, Avalanche photodiodes, TCAD, Performance modeling, Solid modeling, Instrument modeling, Absorption

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Proceedings Article | 28 February 2006 Paper

Analysis of surface-normal coupled-quantum-well modulator at 1.55 um

Z. Li, Alfred Lam, Z. Simon Li

Proc. SPIE. 6115, Physics and Simulation of Optoelectronic Devices XIV

KEYWORDS: Quantum wells, Lithium, Modulation, Electrons, Physics, Modulators, Diodes, Analytical research, Metalorganic chemical vapor deposition, Absorption

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Showing 5 of 17 publications

Course Instructor

WS9001: Crosslight Software Inc. Industry Sponsored Workshop: Introduction to Optoelectronic Device Simulation and VCSEL Design

The course introduces design principles of modern optoelectronic devices such as vertical-cavity lasers and nitride light emitters. It includes hands-on exercises and provides basic skills for operating advanced simulation software. Deep insight into micro- and nano-scale physical processes is given using real-world device examples. Key material properties are discussed and strategies for obtaining realistic simulation results are described.

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