Mr. James Guerrero Profile

James Guerrero

Field Applications Engineer

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Publications (5)

Proceedings Article | 20 March 2019 Presentation + Paper

Compact modeling of negative tone development resist with photo decomposable quencher

Ao Chen, Kar Kit Koh, Yee Mei Foong, Bradley Morgenfeld, Jun Chen, Sandra Lee, Xi Chen, Hesham Omar, Mu Feng, ChangAn Wang, Keith Gronlund, Jun Lang, James Guerrero, Yiqiong Zhao

Proceedings Volume 10961, 109610F (2019) https://doi.org/10.1117/12.2514784

KEYWORDS: Diffusion, SRAF, Photoresist processing, Calibration, Photo decomposable quencher, Semiconducting wafers, Process modeling, Performance modeling, 3D modeling, Error analysis

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Proceedings Article | 22 March 2018 Paper

Massive metrology using fast e-beam technology improves OPC model accuracy by >2x at faster turnaround time

Qian Zhao, Lei Wang, Jazer Wang, ChangAn Wang, Hong-Fei Shi, James Guerrero, Mu Feng, Qiang Zhang, Jiao Liang, Yunbo Guo, Chen Zhang, Tom Wallow, David Rio, Lester Wang, Alvin Wang, Jen-Shiang Wang, Keith Gronlund, Jun Lang, Kar Kit Koh, Dong Qing Zhang, Hongxin Zhang, Subramanian Krishnamurthy, Ray Fei, Chiawen Lin, Wei Fang, Fei Wang

Proceedings Volume 10585, 105852Q (2018) https://doi.org/10.1117/12.2299971

KEYWORDS: Metrology, Data modeling, Calibration, Optical proximity correction, Scanning electron microscopy, Image processing, Time metrology, Critical dimension metrology, Semiconducting wafers, Error analysis

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Classical SEM metrology, CD-SEM, uses low data rate and extensive frame-averaging technique to achieve high-quality SEM imaging for high-precision metrology. The drawbacks include prolonged data collection time and larger photoresist shrinkage due to excess electron dosage. This paper will introduce a novel e-beam metrology system based on a high data rate, large probe current, and ultra-low noise electron optics design. At the same level of metrology precision, this high speed e-beam metrology system could significantly shorten data collection time and reduce electron dosage. In this work, the data collection speed is higher than 7,000 images per hr. Moreover, a novel large field of view (LFOV) capability at high resolution was enabled by an advanced electron deflection system design. The area coverage by LFOV is >100x larger than classical SEM. Superior metrology precision throughout the whole image has been achieved, and high quality metrology data could be extracted from full field. This new capability on metrology will further improve metrology data collection speed to support the need for large volume of metrology data from OPC model calibration of next generation technology. The shrinking EPE (Edge Placement Error) budget places more stringent requirement on OPC model accuracy, which is increasingly limited by metrology errors. In the current practice of metrology data collection and data processing to model calibration flow, CD-SEM throughput becomes a bottleneck that limits the amount of metrology measurements available for OPC model calibration, impacting pattern coverage and model accuracy especially for 2D pattern prediction. To address the trade-off in metrology sampling and model accuracy constrained by the cycle time requirement, this paper employs the high speed e-beam metrology system and a new computational software solution to take full advantage of the large volume data and significantly reduce both systematic and random metrology errors. The new computational software enables users to generate large quantity of highly accurate EP (Edge Placement) gauges and significantly improve design pattern coverage with up to 5X gain in model prediction accuracy on complex 2D patterns. Overall, this work showed >2x improvement in OPC model accuracy at a faster model turn-around time.

Proceedings Article | 15 March 2016 Paper

Layer aware source mask target optimization

Ao Chen, Yee Mei Foong, Jessy Schramm, Liang Ji, Stephen Hsu, James Guerrero, Xiaoyang Li, Joe Shaw, Joe Wang

Proceedings Volume 9780, 97801A (2016) https://doi.org/10.1117/12.2219864

KEYWORDS: Source mask optimization, Lithography, Metals, Photomasks, Etching, Resolution enhancement technologies, Logic, Lithographic illumination, Optical lithography, Computational lithography, Critical dimension metrology, Sensors, Photovoltaics, Optical proximity correction, Electroluminescence

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Proceedings Article | 10 May 2005 Paper

Abnormal patterning analysis using actual lens and illumination source data

Jongkyun Hong, Jeonkyu Lee, Eunsuk Kang, Hyunjo Yang, Donggyu Yim, James Guerrero, Rob Chung

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.599282

KEYWORDS: Optical lithography, Monochromatic aberrations, Semiconducting wafers, Lithographic illumination, Metals, Critical dimension metrology, Yield improvement, Interferometers, Error analysis, Lithography

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Proceedings Article | 14 September 2001 Paper

Validation of an intrafield overlay prediction process

James Guerrero, William Roberts

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435701

KEYWORDS: Overlay metrology, Reticles, Imaging systems, Lithography, Interferometers, Wavefronts, Systems modeling, Semiconducting wafers, Personal protective equipment, Optical lithography

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