Dr. Tomohiro Nishitani Profile

Dr. Tomohiro Nishitani

at Photo electron Soul Inc.

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Author

Publications (4)

Proceedings Article | 10 April 2024 Poster + Paper

Photoelectron beam from semiconductor photocathodes leading to new inspection technologies

Tomohiro Nishitani, Yuta Arakawa, Kotaro Niimi, Yohei Otsuka, Daiki Sato, Atsushi Koizumi, Haruka Shikano, Hokuto Iijima, Yoshio Honda, Hiroshi Amano

Proceedings Volume 12955, 1295533 (2024) https://doi.org/10.1117/12.3010730

KEYWORDS: Electron beams, Semiconductors, Scanning electron microscopy, Transmission electron microscopy, Laser irradiation, Semiconductor materials, Group III-V semiconductors, Electron microscopes, Vacuum

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Proceedings Article | 27 April 2023 Poster + Paper

Novel electron beam technology using InGaN photocathode for high-throughput scanning electron microscope imaging

Daiki Sato, Atsushi Koizumi, Haruka Shikano, Shotaro Noda, Yohei Otsuka, Daisuke Yasufuku, Kazumasa Mori, Hokuto Iijima, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano

Proceedings Volume 12496, 1249629 (2023) https://doi.org/10.1117/12.2657032

KEYWORDS: Electron beams, Quantum efficiency, Scanning electron microscopy, Indium gallium nitride, Semiconductors

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Proceedings Article | 27 April 2023 Poster + Paper

Photoelectron beam technology for SEM imaging with pixel-specific control of irradiation beam current

T. Nishitani, Y. Arakawa, S. Noda, A. Koizumi, D. Sato, H. Shikano, H. Iijima, Y. Honda, H. Amano

Proceedings Volume 12496, 124962N (2023) https://doi.org/10.1117/12.2657853

KEYWORDS: Scanning electron microscopy, Electron beams, Semiconductors, Electrodes, Laser irradiation, Imaging systems, Modulation, Control systems, Beam controllers, Semiconductor lasers

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Proceedings Article | 13 March 2015 Paper

Photocathode electron beam sources using GaN and InGaN with NEA surface

T. Nishitani, T. Maekawa, M. Tabuchi, T. Meguro, Y. Honda, H. Amano

Proceedings Volume 9363, 93630T (2015) https://doi.org/10.1117/12.2076681

KEYWORDS: Indium gallium nitride, Gallium arsenide, Quantum efficiency, Gallium nitride, P-type semiconductors, Semiconductors, Cesium, Electron beams, Adsorption, Protactinium

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