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5 March 2022 Photonic integrated structures for room-temperature single-photon emitters in gallium nitride
Max Meunier, Mu Zhao, Zhengzhi Jiang, Sébastien Chenot, Philippe De Mierry, Mathieu Leroux, Olivier Alibart, Weibo Gao, Jesus Zuniga Perez
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Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120010H (2022) https://doi.org/10.1117/12.2608175
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
Single photon emitters in GaN have aroused great interest as they operate at room temperature, and can emit both in the telecom and near-IR (typically around 700 nm) ranges. We study the growth conditions that enable their presence in GaN, and address the fabrication of different GaN photonic circuits at the corresponding operating wavelengths. In particular, we discuss the fabrication of bullseye nano-antennas, as well as of a more complex system that includes a waveguide cavity surrounded by two asymmetric Distributed Bragg Reflectors, which enable the coupling to an auxiliary waveguide terminated by a grating out-coupler.
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Max Meunier, Mu Zhao, Zhengzhi Jiang, Sébastien Chenot, Philippe De Mierry, Mathieu Leroux, Olivier Alibart, Weibo Gao, and Jesus Zuniga Perez "Photonic integrated structures for room-temperature single-photon emitters in gallium nitride", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120010H (5 March 2022); https://doi.org/10.1117/12.2608175
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KEYWORDS
Gallium nitride
Single photon
Waveguides
Photonic integrated circuits
Semiconductor lasers
Semiconductors
Solid state lasers
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