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There is a growing interest in the use of chalcogenide phase-change materials (PCMs) for reconfigurable metasurfaces to realize next-generation compact adaptive optical systems. However, the application of the classic PCM composition such as Ge2Sb2Te5 for near infrared metasurfaces has been limited due to its high absorption in the crystalline state. Here, by using an ultralow-loss and high-index phase-change material Sb2Se3, we show reconfigurable metasurfaces can manipulate light efficiently in near infrared region with comparable efficiencies in both the amorphous and crystalline states of the material.
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