Presentation
13 March 2024 Silicon nitride integrated photonics with intrinsic quantum emitters
Vladimir M. Shalaev
Author Affiliations +
Abstract
We discovered intrinsic quantum emitters in silicon nitride (SiN), which provide bright, high-purity single-photon emission at room temperature and the capability of seamless integration with SiN photonic waveguides. We established methods of creation of these quantum emitters and performed foundational photophysical studies at room and cryogenic temperatures. We explore the possibility of generating indistinguishable photons at high repetition rates at cryo-temperatures and by using plasmonic metamaterials, which may enable broader applications of SiN quantum emitters. Plasmonic speed-up of spontaneous emission rate beyond the rate of detrimental decoherence processes may also enable the generation of indistinguishable photons even at non-cryogenic temperatures.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir M. Shalaev "Silicon nitride integrated photonics with intrinsic quantum emitters", Proc. SPIE PC12889, Integrated Optics: Devices, Materials, and Technologies XXVIII, PC128890E (13 March 2024); https://doi.org/10.1117/12.3008985
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KEYWORDS
Silicon nitride

Quantum emitters

Quantum photonics

Photons

Quantum plasmonics

Quantum metamaterials

Quantum processes

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