Surface proximal color centers in SiC: deterministic creation and emission enhancement

Xiuling Li

doi:10.1117/12.3001747

9 March 2024 Surface proximal color centers in SiC: deterministic creation and emission enhancement

Xiuling Li

Proceedings Volume PC12895, Quantum Sensing and Nano Electronics and Photonics XX; PC1289516 (2024) https://doi.org/10.1117/12.3001747
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Optically active defects in wide band-gap semiconductors are a leading candidate for use as ultra high-sensitivity quantum sensors of strain as well as electric and magnetic fields. The availability of large size substrates, mature epitaxial growth and fabrication techniques, and excellent optical and electrical properties make silicon carbide (SiC) attractive, in comparison to diamond, for fully integrated and electrically controllable quantum magnetometers. We present high brightness and sensitivity of ensemble surface proximal defects deterministically generated within porous silicon carbide produced by a damage-free metal-assisted chemical etching method.

Conference Presentation

Citation Download Citation

Xiuling Li "Surface proximal color centers in SiC: deterministic creation and emission enhancement", Proc. SPIE PC12895, Quantum Sensing and Nano Electronics and Photonics XX, PC1289516 (9 March 2024); https://doi.org/10.1117/12.3001747

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available