Masked Ion Beam Lithography For Submicrometer Device Fabrication

C. W. Slayman; J. L. Bartelt; C. M. McKenna

doi:10.1117/12.933430

30 June 1982 Masked Ion Beam Lithography For Submicrometer Device Fabrication

C. W. Slayman, J. L. Bartelt, C. M. McKenna

Proceedings Volume 0333, Submicron Lithography I; (1982) https://doi.org/10.1117/12.933430
Event: 1982 Microlithography Conferences, 1982, Santa Clara, United States

Abstract

An essential step in the evaluation of masked ion beam lithography (MIBL) as a practical technology for submicrometer pattern replication has been taken in the fabrication of functional NMOS devices using MIBL exposures on all levels. In MIBL, a collimated beam of protons is directed through a patterned mask to expose a resist-covered wafer in proximity to the mask. Employing silicon channeling masks with appropriate gold absorber patterns for each level of a four-mask level NMOS process, exposures of high resolution resists were performed and patterns transferred with standard etching processes. We present details on the NMOS test chip vehicle, the resist and processing technology development, and the measured device characteristics.

Citation Download Citation

C. W. Slayman, J. L. Bartelt, and C. M. McKenna "Masked Ion Beam Lithography For Submicrometer Device Fabrication", Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); https://doi.org/10.1117/12.933430

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