Increasing The Functional Speed Of Positive Photoresist

David J. ElIiott

doi:10.1117/12.955352

8 August 1977 Increasing The Functional Speed Of Positive Photoresist

David J. ElIiott

Proceedings Volume 0100, Developments in Semiconductor Microlithography II; (1977) https://doi.org/10.1117/12.955352
Event: Developments in Semiconductor Microlithography II, 1977, San Jose, United States

Abstract

A method for increasing the functional speed of positive photoresist is discussed. Optical linewidth measurement and SEM analysis are used to illustrate the effects of photoresist thickness, exposure time and developer concentration on photomask image reproduction. Finally, photoresist is related to other process parameters, including mask geometry reproduction, and a method for balancing these factors is suggested.

Citation Download Citation

David J. ElIiott "Increasing The Functional Speed Of Positive Photoresist", Proc. SPIE 0100, Developments in Semiconductor Microlithography II, (8 August 1977); https://doi.org/10.1117/12.955352

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